1 - 2
2000 IXYS All rights reserved
G = Gate,
C = Collector,
E = Emitter
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
W
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C, limited by leads
75
A
I
C90
T
C
= 90
C
40
A
I
CM
T
C
= 25
C, 1 ms
150
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 22
W
I
CM
= 80
A
(RBSOA)
Clamped inductive load, L = 30
m
H
@ 0.8 V
CES
t
SC
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125
C
10
m
s
(SCSOA)
R
G
= 22
W,
non repetitive
P
C
T
C
= 25
C
280
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque
(TO-264)
0.9/6
Nm/lb.in.
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-264
10
g
PLUS247
5
g
V
CES
= 600 V
I
C25
= 75 A
V
CE(sat)
= 2.2 V
t
fi(typ)
= 120 ns
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 1 mA, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 4 mA, V
CE
= V
GE
4
7
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
650
m
A
V
GE
= 0 V
T
J
= 150
C
5
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.2
V
98573A (7/00)
PLUS 247
TM
(IXSX)
IGBT with Diode
PLUS247
TM
package
Short Circuit SOA Capability
IXSK 40N60BD1
IXSX 40N60BD1
Features
International standard packages
Guaranteed Short Circuit SOA
capability
Medium frequency IGBT and anti-
parallel FRED in one package
Latest generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery,low leakage
Epitaxial
Diode
- soft recovery with low I
RM
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings (two devices in one
package)
Reduces assembly time and cost
TO-264 AA
G
C
E
(IXSK)
G
C
E
C (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
2 - 2
2000 IXYS All rights reserved
IXSK 40N60BD1
IXSX 40N60BD1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
16
23
S
Pulse test, t
300
m
s, duty cycle
2 %
C
iss
3700
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
440
pF
C
rss
60
pF
Q
g
190
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
45
nC
Q
gc
88
nC
t
d(on)
50
ns
t
ri
50
ns
t
d(off)
110
200
ns
t
fi
120
200
ns
E
off
1.8
2.6
mJ
t
d(on)
50
ns
t
ri
50
ns
E
on
2.2
mJ
t
d(off)
190
ns
t
fi
180
ns
E
off
2.6
mJ
R
thJC
0.48 K/W
R
thCK
0.15
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
C90
, V
GE
= 0 V,
1.8
V
Pulse test, t
300
m
s, duty cycle d
2 %
I
RM
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 100 A/
m
s
2
2.5
A
t
rr
V
R
= 100 V
I
F
= 1 A; -di/dt = 200 A/
m
s; V
R
= 30 V
35
ns
R
thJC
0.75 K/W
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
m
H,
V
CE
= 0.8 V
CES
, R
G
= 2.7
W
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
m
H
V
CE
= 0.8 V
CES
, R
G
= 2.7
W
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
TO-264 AA Outline
PLUS247
TM
(IXSX)
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190 .205
A
1
2.29
2.54
.090 .100
A
2
1.91
2.16
.075 .085
b
1.14
1.40
.045 .055
b
1
1.91
2.13
.075 .084
b
2
2.92
3.12
.115 .123
C
0.61
0.80
.024 .031
D
20.80
21.34
.819 .840
E
15.75
16.13
.620 .635
e 5.45 BSC
.215 BSC
L
19.81
20.32
.780 .800
L1
3.81
4.32
.150 .170
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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