1 - 4
2000 IXYS All rights reserved
TO-247 AD
G
C
E
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
1200
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
W
1200
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C, limited by leads
75
A
I
C90
T
C
= 90
C
45
A
I
CM
T
C
= 25
C, 1 ms
180
A
SSOA
V
GE
= 15 V, T
J
= 125
C, R
G
= 2.7
W
I
CM
= 90
A
(RBSOA)
Clamped inductive load, L = 30
m
H
@ 0.8 V
CES
t
SC
V
GE
= 15 V, V
CE
= 0.6 V
CES
, T
J
= 125
C
10
m
s
(SCSOA)
R
G
= 22
W,
non repetitive
P
C
T
C
= 25
C
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque
1.13/10
Nm/lb.in.
Weight
6
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
High Voltage,
IXSH 45N120
V
CES
= 1200 V
Low V
CE(sat)
IGBT
I
C25
= 75 A
V
CE(sat)
= 3 V
Short Circuit SOA Capability
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 3 mA, V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 4 mA, V
CE
= V
GE
4
6
8
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
400
m
A
V
GE
= 0 V
T
J
= 125
C
1.2
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
3
V
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Features
q
International standard package
JEDEC TO-247
q
High frequency IGBT with guaranteed
Short Circuit SOA capability
q
Fast Fall Time for switching speeds
up to 20 kHz
q
2nd generation HDMOS
TM
process
q
Low V
CE(sat)
- for minimum on-state conduction
losses
q
MOS Gate turn-on
- drive simplicity
Applications
q
AC motor speed control
q
DC servo and robot drive
q
Uninterruptible power supplies (UPS)
q
Switch-mode and resonant-mode
power supplies
q
Welding
Advantages
q
Easy to mount with 1 screw
(isolated mounting screw hole)
q
High power density
92773F (7/00)
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
26
S
Pulse test, t
300
m
s, duty cycle d
2 %
I
C(on)
V
GE
= 15 V, V
CE
= 10 V
170
A
C
ies
4150
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
285
pF
C
res
65
pF
Q
g
150
200
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
45
60
nC
Q
gc
75
100
nC
t
d(on)
80
ns
t
ri
250
ns
t
d(off)
400
ns
t
fi
1000
ns
E
off
21
mJ
t
d(on)
80
ns
t
ri
250
ns
E
on
7.1
mJ
t
d(off)
450
ns
t
fi
1200
ns
E
off
27
mJ
R
thJC
0.42 K/W
R
thCK
0.25
K/W
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
m
H
V
CE
= 0.8 V
CES
, R
G
= 2.7
W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
m
H
V
CE
= 0.8 V
CES
, R
G
= 2.7
W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
IXSH 45N120
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
2000 IXYS All rights reserved
IXSH 45N120
V
GE
- Volts
8
9
10
11
12
13
14
15
V
CE
-
V
o
lts
0
1
2
3
4
5
6
7
8
9
10
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
BV /
V
(t
h
)
-
N
o
rm
a
liz
e
d
0.7
0.8
0.9
1.0
1.1
1.2
1.3
BV
CES
I
C
= 3mA
V
GE(th)
I
C
= 4mA
V
GE
- Volts
4
5
6
7
8
9
10 11 12 13 14 15
I
C
-
Amper
es
0
10
20
30
40
50
60
70
80
90
T
J
= 125C
V
CE
= 10V
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
V
CE
(
s
a
t
)
- No
rm
a
liz
e
d
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V
GE
= 15V
V
CE
- Volts
0
2
4
6
8
10
12
14
16
18
20
I
C
-
Amper
es
0
50
100
150
200
250
300
V
GE
= 15V
T
J
= 25C
9V
11V
13V
V
CE
- Volts
0
1
2
3
4
5
I
C
-
Am
per
es
0
10
20
30
40
50
60
70
11V
7V
9V
T
J
= 25C
V
GE
= 15V
T
J
= 25C
13V
I
C
= 22.5A
I
C
= 45A
I
C
= 90A
I
C
= 22.5A
I
C
= 45A
I
C
= 90A
T
J
= 25C
T
J
= - 40C
Fig.3 Collector-Emitter Voltage
Fig.4 Temperature Dependence
vs. Gate-Emitter Voltage
of Output Saturation Voltage
Fig. 5 Input Admittance
Fig.6 Temperature Dependence of
Breakdown and Threshold Voltage
Fig.1 Saturation Characteristics
Fig.2 Output Characterstics
4 - 4
2000 IXYS All rights reserved
Pulse Width - seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
Z
th
J
C
(K
/W
)
0.001
0.01
0.1
1
D = Duty Cycle
Single Pulse
D=0.5
D=0.2
V
CE
- Volts
0
200
400
600
800
1000
1200
I
C
-
Amper
es
0.01
0.1
1
10
100
Q
g
- nanocoulombs
0
50
100
150
200
V
GE
-
V
o
lts
0
3
6
9
12
15
I
C
= 45A
V
CE
= 500V
R
G
- Ohms
0
10
20
30
40
50
E
of
f
-
mi
l
l
i
j
oul
es
20
25
30
35
40
t
fi
-
nanos
econds
1800
2000
2200
2400
2600
t
fi
E
off
I
C
- Amperes
0
20
40
60
80
100
t
fi
-
nanos
econd
s
1500
1750
2000
2250
2500
2750
3000
E
of
f
-
m
illijo
u
l
e
s
0
10
20
30
40
50
60
t
fi
E
off
T
J
= 125C
R
G
= 10
W
T
J
= 125C
I
C
= 45A
T
J
= 125C
R
G
= 2.7
W
dV/dt < 6V/ns
D=0.1
D=0.01
D=0.02
D=0.05
Fig.7 Turn-Off Energy per Pulse and
Fig.8 Dependence of Turn-Off Energy
Fall Time on Collector Current
Per Pulse and Fall Time on R
G
Fig.11 Transient Thermal Impedance
IXSH 45N120
Fig.9
Gate Charge Characteristic Curve
Fig.10 Turn-Off Safe Operating Area
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