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Электронный компонент: 60N60U1

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1 - 5
2000 IXYS All rights reserved
Low V
CE(sat)
IGBT
with Diode
ISOPLUS247
TM
(Electrically Isolated Back Surface)
IXGR 60N60U1
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
W
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
75
A
I
C100
T
C
= 90
C
60
A
I
CM
T
C
= 25
C, 1 ms
200
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 10
W
I
CM
= 100
A
(RBSOA)
Clamped inductive load; V
CL
= 0.8 V
CES
P
C
T
C
= 25
C
300
W
T
J
-55 ..+ 150
C
T
JM
150
C
T
stg
-55...+ 150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
V
ISOL
50/60Hz, RMS, t = 1minute, leads-to tab
2500
V
Weight
5
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 1 mA, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 250
m
A, V
CE
= V
GE
2.5
5.5
V
I
CES
V
CE
= V
CES
T
J
= 25
C
250
m
A
V
GE
= 0 V
T
J
= 150
C
2
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C100
, V
GE
= 15 V
1.7
V
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
* Patent pending
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low collector to tab capacitance
(<25pF)
Rugged polysilicon gate cell structure
Fast intrinsic Rectifier
Low V
CE(sat)
IGBT and standard diode
for minimum on-state conduction
losses
MOS Gate turn-on for drive simplicity
Applications
Solid state relays
Capacitor discharge circuits
High power ignition circuits
Advantages
Space savings (two devices in one
package)
Reduces assembly time and cost
High power density
V
CES
=
600 V
I
C25
=
75 A
V
CE(sat)
=
1.7 V
ISOPLUS247
TM
G
C
E
Isolated back surface*
98595C (7/00)
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
2 - 5
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C100
; V
CE
= 10 V,
30
40
S
Pulse test, t
300
m
s, duty cycle
2 %
C
ies
4000
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
340
pF
C
res
100
pF
Q
g
200
nC
Q
ge
I
C
= I
C100
, V
GE
= 15 V, V
CE
= 0.5 V
CES
35
nC
Q
gc
80
nC
t
d(on)
50
ns
t
ri
200
ns
t
d(off)
600
800
ns
t
fi
500
700
ns
E
off
16
mJ
t
d(on)
50
ns
t
ri
240
ns
t
d(off)
1000
ns
t
fi
1000
ns
E
off
26
mJ
R
thJC
0.5 K/W
R
thCK
0.15
K/W
Inductive load, T
J
= 125
C
I
C
= I
C100
, V
GE
= 15 V, L = 100
m
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.7
W
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 25
C
I
C
= I
C100
, V
GE
= 15 V, L = 100
m
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.7
W
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Reverse Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
C100
, V
GE
= 0 V,
2.2
V
Pulse test, t
300
m
s, duty cycle d
2 %
R
thJC
1.0 K/W
IXGR 60N60U1
ISOPLUS 247 (IXGR) OUTLINE
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190 .205
A
1
2.29
2.54
.090 .100
A
2
1.91
2.16
.075 .085
b
1.14
1.40
.045 .055
b
1
1.91
2.13
.075 .084
b
2
2.92
3.12
.115 .123
C
0.61
0.80
.024 .031
D
20.80
21.34
.819 .840
E
15.75
16.13
.620 .635
e 5.45 BSC
.215 BSC
L
19.81
20.32
.780 .800
L1
3.81
4.32
.150 .170
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
S
13.21
13.72
.520 .540
T
15.75
16.26
.620 .640
U
1.65
3.03
.065 .080
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 5
2000 IXYS All rights reserved
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
BV
/
V
GE
(
t
h)
- N
o
r
m
al
i
z
e
d
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
T
J
- Degrees C
25
50
75
100
125
150
V
CE (
s
a
t
)
- Nor
m
ali
z
ed
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V
CE
- Volts
0
1
2
3
4
5
I
C
- A
m
per
es
0
10
20
30
40
50
60
70
80
90
100
V
CE
- Volts
0
1
2
3
4
I
C
- A
m
p
e
res
0
25
50
75
100
125
150
175
200
V
CE
- Volts
0
100
200
300
400
500
600
I
C
- A
m
per
es
0.1
1
10
100
V
CE
- Volts
0
2
4
6
8
10
I
C
- A
m
peres
0
50
100
150
200
250
300
350
13V
11V
9V
7V
V
GE
= 15V
13V
11V
9V
7V
T
J
= 25C
V
GE
= 15V
I
C
= 30A
I
C
= 60A
I
C
= 120A
V
GE(th)
I
C
= 250A
BV
CES
I
C
= 250A
T
J
= 125
o
C
T
J
= 25
o
C
V
GE
= 15V
T
J
= 25C
V
GE
= 15V
T
J
= 125
o
C
R
G
= 4.7
W
dV/dt < 5V/ns
IXGR 60N60U1
Figure 1. Saturation Voltage Characteristics
Figure 2. Extended Output Characteristics
Figure 3. Saturation Voltage Characteristics
Figure 4. Temperature Dependence of V
CE(sat)
Figure 5. Admittance Curves
Figure 6. Capacitance Curves
4 - 5
2000 IXYS All rights reserved
IXGR 60N60U1
Figure 11. IGBT Transient Thermal Resistance
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
Z
th
J
C
(
K
/W
)
0.001
0.01
0.1
1
V
CE
- Volts
0
10
20
30
40
C
a
p
a
c
i
ta
n
c
e
-
p
i
co
fa
r
d
s
10
100
1000
10000
Q
G
- nanocoulombs
0
50
100
150
200
250
V
GE
-

V
o
lt
s
0
3
6
9
12
15
R
G
- Ohms
0
10
20
30
40
50
E
of
f
-

m
i
l
lij
o
u
l
es
10
12
14
16
18
t
fi
-

nano
sec
ond
s
200
400
600
800
1000
T
J
= 125C
I
C
- Amperes
0
20
40
60
80
100
120
E
of
f
-

mi
lli
Jo
u
l
es
0
10
20
30
40
t
fi
-

na
nos
econ
d
s
0
250
500
750
1000
V
CE
= 300V
I
C
= 60A
I
C
= 60A
tfi
E
off
tfi
E
off
Cies
D = Duty Cycle
R
G
= 10
T
J
= 125C
Figure 9. Gate Charge
Figure 10. Turn-off Safe Operating Area
Figure 8. Dependence of E
ON
and E
OFF
on R
G
.
Figure 7. Dependence of E
ON
and E
OFF
on I
C
.
5 - 5
2000 IXYS All rights reserved
IXGR 60N60U1
Fig. 12 Forward current
Fig. 13 Recovery charge versus -di
F
/dt.
Fig. 14 Peak reverse current versus
versus voltage drop.
-di
F
/dt.
Fig. 15. Dynamic parameters versus
Fig. 16 Recovery time versus -di
F
/dt.
Fig. 17 Peak forward voltage vs. di
F
/dt.
junction temperature.
Fig. 18 Transient thermal impedance junction to case.