Symbol

Test Conditions

Maximum Ratings

IXFK

IXFN

DSS

= 25°C to 150°C

300

DGR

= 25°C to 150°C; R

= 1 M

300

Continuous

±20

GSM

Transient

±30

D25

= 25°C

= 25°C, pulse width limited by T

292

= 25°C

dv/dt

, di/dt

100 A/

s, V

DSS

V/ns

150°C, R

= 2 W

= 25°C

500

520

-55 ... +150

° C

150

° C

stg

-55 ... +150

° C

1.6 mm (0.063 in) from case for 10 s

300

° C

ISOL

50/60 Hz, RMS

t = 1 min

2500

ISOL

1 mA

t = 1 s

3000

Mounting torque

0.9/6

1.5/13 Nm/lb.in.

Terminal connection torque

1.5/13 Nm/lb.in.

Weight

HiPerFET

Power MOSFETs

N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t

Features

International standard packages

JEDEC

TO-264 AA,

epoxy

meet

V-0, flammability classification

miniBLOC with Aluminium nitride
isolation

Low R

DS (on)

HDMOS

process

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)
rated

Low package inductance

Fast intrinsic Rectifier

Applications

DC-DC converters

Synchronous rectification

Battery chargers

Switched-mode and resonant-mode
power supplies

DC choppers

Temperature and lighting controls

Low voltage relays

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

= 25°C, unless otherwise specified)

min.

typ.

max.

DSS

= 0 V, I

= 1 mA

300

GS(th)

= V

, I

= 8 mA

GSS

= ±20 V

, V

= 0

±200

DSS

= 0.8 V

DSS

= 25°C

400

= 0 V

= 125°C

DS(on)

= 10 V, I

= 0.5 I

D25

Pulse test, t

300

s, duty cycle d

2 %

TO-264 AA (IXFK)

G = Gate

D = Drain

S = Source

TAB = Drain

Either Source terminal at miniBLOC can be used
as Main or Kelvin Source

92805J (11/01)

miniBLOC, SOT-227 B (IXFN)

miniBLOC, SOT-227 B (IXFN)
E153432

E153432

(TAB)

DSS

D25

DS(on)

IXFK 73 N 30

300 V

73 A

45 m

IXFN 73 N 30

300 V

73 A

45 m

200 ns

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFK 73N30
IXFN 73N30

TO-264 AA Outline

Millimeter

Inches

Min.

Max.

Min.

Max.

4.82

5.13

.190

.202

2.54

2.89

.100

.114

2.00

2.10

.079

.083

1.12

1.42

.044

.056

2.39

2.69

.094

.106

2.90

3.09

.114

.122

0.53

0.83

.021

.033

25.91

26.16

1.020

1.030

19.81

19.96

.780

.786

5.46 BSC

.215 BSC

0.00

0.25

.000

.010

0.00

0.25

.000

.010

20.32

20.83

.800

.820

2.29

2.59

.090

.102

3.17

3.66

.125

.144

6.07

6.27

.239

.247

8.38

8.69

.330

.342

3.81

4.32

.150

.170

1.78

2.29

.070

.090

S6.04

6.30

.238

.248

1.57

1.83

.062

.072

Dim.

miniBLOC, SOT-227 B

M4 screws (4x) supplied

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

31.50

31.88

1.240

1.255

7.80

8.20

0.307

0.323

4.09

4.29

0.161

0.169

4.09

4.29

0.161

0.169

4.09

4.29

0.161

0.169

14.91

15.11

0.587

0.595

30.12

30.30

1.186

1.193

38.00

38.23

1.496

1.505

11.68

12.22

0.460

0.481

8.92

9.60

0.351

0.378

0.76

0.84

0.030

0.033

12.60

12.85

0.496

0.506

25.15

25.42

0.990

1.001

1.98

2.13

0.078

0.084

4.95

5.97

0.195

0.235

26.54

26.90

1.045

1.059

3.94

4.42

0.155

0.174

S4.72

4.85

0.186

0.191

24.59

25.07

0.968

0.987

-0.05

0.1

-0.002

0.004

Symbol

Test Conditions

Characteristic Values

= 25°C, unless otherwise specified)

min.

typ.

max.

= 10 V; I

= 0.5 I

D25

, pulse test

iss

9000

oss

= 0 V, V

= 25 V, f = 1 MHz

1500

rss

580

d(on)

= 10 V, V

= 0.5 V

DSS

, I

= 0.5 I

D25

d(off)

= 1

(External),

100

g(on)

360

= 10 V, V

= 0.5 V

DSS

, I

= 0.5 I

D25

180

thJC

TO-264 AA

0.25

K/W

thCK

TO-264 AA

0.15

K/W

thJC

miniBLOC, SOT-227 B

0.24

K/W

thCK

miniBLOC, SOT-227 B

0.05

K/W

Source-Drain Diode

Characteristic Values

= 25°C, unless otherwise specified)

Symbol

Test Conditions

min.

typ.

max.

= 0 V

Repetitive; pulse width limited by T

292

= 100 A, V

= 0 V,

1.5

Pulse test, t

300

s, duty cycle d

2 %

200

= I

, -di/dt = 100 A/

s, V

= 100 V

Fig. 1 Output Characteristics

Fig. 2 Input Admittance

Fig. 5 Drain Current vs.

Fig. 6 Temperature Dependence of

Case Temperature

Breakdown and Threshold Voltage

Fig. 3 R

DS(on)

vs. Drain Current

Fig. 4 Temperature Dependence

of Drain to Source Resistance

- Degrees C

-50 -25

100 125 150

BV/

t
h
)

- N

o
rm

a
l
iz

e
d

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

- Degrees C

-50 -25

100 125 150

per

- Degrees C

-50 -25

100 125 150

(
on)

- No

a
l
iz

e
d

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

- Amperes

120

160

200

240

(
on)

- No

a
l
iz

e
d

0.8

1.0

1.2

1.4

1.6

1.8

2.0

- Volts

per

100

120

140

160

8V
7V

= 40A

GS(th)

DSS

= 10V

= 15V

- Volts

per

100

120

140

160

= 25°C

IXFK 73N30

IXFK 73N30
IXFN 73N30

IXFN 73N30

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFK 73N30
IXFN 73N30

Fig.10 Transient Thermal Impedance

Time - Seconds

0.001

0.01

0.1

her

mal

ons

e -

0.01

0.1

- Volts

c
i
t
a
nc

e
- p

1000

2000

3000

4000

5000

6000

7000

8000

9000

10000

rss

- Volts

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

p
e
r
e
s

100

120

140

160

Gate Charge - nCoulombs

100 150 200 250 300 350 400

o
lt
s

oss

= 150V

= 42A

= 10mA

= 125°C

iss

f = 1MHz
V

= 25V

= 25°C

Fig.7 Gate Charge Characteristic Curve

Fig.8 Capacitance Curves

Fig.9 Source Current vs. Source

to Drain Voltage

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: 73N30

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: 73N30