2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GS
= 1 M
600
V
V
CES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
(silicon chip capability)
160
A
I
C90
T
C
= 90
C
(silicon chip capability)
80
A
I
L(RMS)
T
C
= 90
C
(silicon chip capability)
75
A
I
CM
T
C
= 25
C, 1 ms
300
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 5
I
CM
= 160
A
(RBSOA)
Clamped inductive load
@ 0.8 V
CES
tsc
V
GE
= 15 V, V
CE
= 0.6 V
CES,
T
J
= 125
C
10
s
SCSOA
R
G
= 5
,
non-repetitive
P
C
T
C
= 25
C
500
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in.) from case for 10 s
300
C
M
d
Mounting torque
TO-264
0.4/6 Nm/lb.in.
Weight
PLUS 247
6
g
TO-264
10
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 500
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 8 mA, V
CE
= V
GE
4
8
V
I
CES
V
CE
= V
CES
T
J
= 25
C
200
A
V
GE
= 0 V
T
J
= 125
C
2 mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
200
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.5
V
Features
!
International standard packages
!
Very high current, fast switching IGBT
!
Low V
CE(sat)
- for minimum on-state conduction
losses
!
MOS Gate turn-on
- drive simplicity
Applications
!
AC motor speed control
!
DC servo and robot drives
!
DC choppers
!
Uninterruptible power supplies (UPS)
!
Switch-mode and resonant-mode
power supplies
Advantages
!
PLUS 247
TM
package for clip or spring
mounting
!
Space savings
!
High power density
98721B (07/02)
PLUS 247
TM
(IXSX)
G
C
(TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
IXSK 80N60B
V
CES
= 600 V
IXSX 80N60B
I
C25
= 160 A
V
CE(sat)
= 2.5 V
E
G
C
(TAB)
TO-264 AA
(IXSK)
E
High Current
IGBT
Short Circuit SOA Capability
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= 60 A; V
CE
= 10 V,
52
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
6600
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
660
pF
C
res
196
pF
Q
g
240
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
85
nC
Q
gc
90
nC
t
d(on)
60
ns
t
ri
45
ns
t
d(off)
140
280
ns
t
fi
180
280
ns
E
off
4.2
7.0 mJ
t
d(on)
60
ns
t
ri
60
ns
E
on
4.8
mJ
t
d(off)
190
ns
t
fi
260
ns
E
off
6.7
mJ
R
thJC
0.26 K/W
R
thCK
0.15
K/W
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190
.205
A
1
2.29
2.54
.090
.100
A
2
1.91
2.16
.075
.085
b
1.14
1.40
.045
.055
b
1
1.91
2.13
.075
.084
b
2
2.92
3.12
.115
.123
C
0.61
0.80
.024
.031
D
20.80
21.34
.819
.840
E
15.75
16.13
.620
.635
e
5.45 BSC
.215 BSC
L
19.81
20.32
.780
.800
L1
3.81
4.32
.150
.170
Q
5.59
6.20
.220 0.244
R
4.32
4.83
.170
.190
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247
TM
Outline
IXSK 80N60B
IXSX 80N60B
TO-264 AA Outline
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.7
Remarks: Switching times
may increase for
V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
=125
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.7
Remarks: Switching times
may increase for
V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
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