2001 IXYS All rights reserved
IXYS reserves the right to change limits, conditions and dimensions.
Phase Control Thyristor
ISOPLUS220
TM
Electrically Isolated Back Surface
* Patent pending
ISOPLUS220
TM
3
2
Isolated back surface *
1
A
C
G
CS 19
V
RRM
= 800 - 1200 V
I
T(RMS)
= 35 A
I
T(AV)M
= 13 A
ADVANCE TECHNICAL INFORMATION
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
800
800
CS 19-08ho1C
1200
1200
CS 19-12ho1C
Symbol
Test Conditions
Maximum Ratings
I
T(RMS)
T
VJ
= T
VJM
35
A
I
T(AV)M
T
C
= 85
C; 180
sine
13
A
I
TSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
100
A
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
105
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
85
A
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
90
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
50
A
2
s
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
45
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
36
A
2
s
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
33
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 20 A
100
A/
s
f = 50
Hz, t
P
=200
s
V
D
= 2/3 V
DRM
I
G
=0.08 A
non repetitive, I
T
= I
T(AV)M
500
A/
s
di
G
/dt = 0.08 A/
s
(dv/dt)
cr
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
500
V/
s
R
GK
=
; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
t
P
=
30
s
5
W
I
T
= I
T(AV)M
t
P
=
300
s
2.5
W
P
GAV
0.5
W
V
RGM
10
V
T
VJ
-40...+125
C
T
VJM
125
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz RMS; I
ISOL
1 mA
2500
V~
T
L
1.6mm from case; 10s
260
C
F
C
Mounting force
11...65 / 2.4...11
N / lb
Weight
2
g
Features
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low cathode-to-tab capacitance (15pF
typical)
l
Planar passivated chips
l
Epoxy meets UL 94V-0
l
High performance glass
passivated chip
l
Long-term stability of leakage
current and blocking voltage
Applications
l
Motor control
l
Power converter
l
AC power controller
l
Light and temperature control
l
SCR for inrush current limiting
in power supplies or AC drive
Advantages
l
Space and weight savings
l
Simple mounting
98789 (5/01)
CS 19
Symbol
Test Conditions
Characteristic Values
I
R
, I
D
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
1
mA
V
T
I
T
= 30 A; T
VJ
= 25
C
1.65
V
V
T0
For power-loss calculations only (T
VJ
= 125
C)
0.87
V
r
T
29
m
V
GT
V
D
= 6 V;
T
VJ
= 25
C
1.5
V
T
VJ
= -40
C
2.5
V
I
GT
V
D
= 6 V;
T
VJ
= 25
C
25
mA
T
VJ
= -40
C
50
mA
V
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
0.2
V
I
GD
3
mA
I
L
T
VJ
= 25
C; t
P
= 10
s
75
mA
I
G
=0.08 A; di
G
/dt =0.08 A/
s
I
H
T
VJ
= 25
C; V
D
= 6 V; R
GK
=
50
mA
t
gd
T
VJ
= 25
C; V
D
= 1/2 V
DRM
2
s
I
G
= 0.08 A; di
G
/dt = 0.08 A/
s
R
thJC
DC current
1.7
K/W
R
thCK
DC current
typical
0.6
K/W
a
Max. acceleration, 50 Hz
50
m/s
2
ISOPLUS220 OUTLINE
Note: All terminals are solder plated.
1 - Cathode
2 - Anode
3 - Gate
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