DE475-102N21A
RF Power MOSFET
V
DSS
= 1000 V
I
D25
=
24 A
R
DS(on)
= 0.41
P
DC
= 1800W
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25C to 150C
1000 V
V
DGR
T
J
= 25C to 150C; R
GS
= 1 M
1000 V
V
GS
Continuous
20 V
V
GSM
Transient
30 V
I
D25
T
c
= 25C
24 A
I
DM
T
c
= 25C, pulse width limited by T
JM
144 A
I
AR
T
c
= 25C
21 A
E
AR
T
c
= 25C
30 mJ
dv/dt
I
S
I
DM
, di/dt
100A/s, V
DD
V
DSS
,
T
j
150C, R
G
= 0.2
5 V/ns
I
S
= 0
>200 V/ns
P
DC
1800 W
P
DHS
T
c
= 25C
Derate 4.0W/C above 25C
730 W
P
DAMB
T
c
= 25C
4.5 W
R
thJC
0.08 C/W
R
thJHS
0.20 C/W
Symbol Test
Conditions
Characteristic Values
T
J
= 25C unless otherwise specified
min. typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 ma
1000
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 ma
2.5
5.5
V
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25C
V
GS
= 0 T
J
= 125C
50
1
A
mA
R
DS(on)
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t
300S, duty cycle d 2%
0.41
g
fs
V
DS
= 15 V, I
D
= 0.5I
D25
, pulse test
27
S
T
J
-55
+175
C
T
JM
175
C
T
stg
-55
+175
C
T
L
1.6mm (0.063 in) from case for 10 s
300
C
Weight
3
g
Features
Isolated Substrate
-
high isolation voltage (>2500V)
-
excellent thermal transfer
-
Increased temperature and power
cycling capability
IXYS advanced low Q
g
process
Low gate charge and capacitances
-
easier to drive
-
faster switching
Low R
DS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other haz-
ardous materials
Advantages
Optimized for RF and high speed
switching at frequencies to 30MHz
Easy to mount--no insulators needed
High power density
N-Channel Enhancement Mode
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
30MHz Maximum Frequency
DRAIN
SG1
SG2
GATE
SD1
SD2
DE475-102N21A
RF Power MOSFET
Symbol Test
Conditions
Characteristic Values
(
T
J
= 25C unless otherwise specified)
min. typ.
max.
R
G
0.3
C
iss
5500
pF
C
oss
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz
200
pF
C
rss
60
pF
C
stray
Back Metal to any Pin
46
pF
T
d(on)
5
ns
T
on
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2
(External)
5
ns
T
d(off)
5
ns
T
off
8
ns
Q
g(on)
160
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
35
nC
Q
gd
77
nC
Source-Drain Diode
Characteristic Values
(
T
J
= 25C unless otherwise specified)
Symbol
Test Conditions
min. typ.
max.
I
S
V
GS
= 0 V
21
A
I
SM
Repetitive; pulse width limited by T
JM
144
A
V
SD
1.5
V
T
rr
200
ns
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
300 s, duty cycle 2%
Q
RM
I
F
= I
S
, -di/dt = 100A/
s,
V
R
= 100V
0.6
C
I
RM
8
A
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
For detailed device mounting and installation instructions, see the "DE-
Series MOSFET Mounting Instructions" technical note on IXYS RF's web
site at www.ixysrf.com/Technical_Support/App_notes.html
DE475-102N21A
RF Power MOSFET
10
100
1000
10000
0
100
200
300
400
500
600
700
800
900
1000
Vds in Volts
C
a
p
a
ci
t
a
n
ce i
n
p
F
Ciss
Coss
Crss
475-102N21A Capacitances vs Vds
DE475-102N21A
RF Power MOSFET
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: deiinfo@directedenergy.com
Web: http://www.directedenergy.com
102N21A DE-SERIES SPICE Model
(Preliminary)
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expan-
sion of the SPICE level 3 MOSFET model. It includes the stray inductive terms
L
G
, L
S
and L
D
. Rd is the R
DS(ON)
of the device, Rds is the resistive leakage term.
The output capacitance, C
OSS
, and reverse transfer capacitance, C
RSS
are mod-
eled with reversed biased diodes. This provides a varactor type response neces-
sary for a high power device model. The turn on delay and the turn off delay are
adjusted via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
.SUBCKT 102N21A 10 20 30
* TERMINALS: D G S
* 1000 Volt 21 Amp 0.41 ohm N-Channel Power MOSFET
* REV.A 01-09-02
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 0.3
DON 6 2 D1
ROF 5 7 .1
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 5.5N
RD 4 1 0.41
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0247 Rev 4
2003 IXYS RF
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