Features
Built using the advantages and compatibility
of CMOS and IXYS HDMOS
TM
processes
Latch-Up Protected
High Peak Output Current: 20A Peak
Wide Operating Range: 8V to 30V
Rise And Fall Times of <4ns
Minimum Pulse Width Of 8ns
High Capacitive Load
Drive Capability: 4nF in <4ns
Matched Rise And Fall Times
32ns Input To Output Delay Time
Low Output Impedance
Low Quiescent Supply Currentt
Applications
Driving RF MOSFETs
Class D or E Switching Amplifier Drivers
Multi MHz Switch Mode Power Supplies (SMPS)
Pulse Generators
Acoustic Transducer Drivers
Pulsed Laser Diode Drivers
DC to DC Converters
Pulse Transformer Driver
20 Ampere Low-Side Ultrafast RF MOSFET Driver
First Release
Copyright DIRECTED ENERGY, INC. 2001
Description
TheDEIC420 is a CMOS high speed high current gate
driver specifically designed to drive MOSFETs in Class D
and E HF RF applications at up to 45MHz, as well as
other applications requiring ultrafast rise and fall times or
short minimum pulse widths. The DEIC420 can source
and sink 20A of peak current while producing voltage rise
and fall times of less than 4ns, and minimum pulse
widths of 8ns. The input of the driver is compatible with
TTL or CMOS and is fully immune to latch up over the
entire operating range. Designed with small internal
delays, cross conduction/current shoot-through is
virtually eliminated in the DEIC420. Its features and wide
safety margin in operating voltage and power make the
DEIC420 unmatched in performance and value.
The DEIC420 is packaged in DEI's low inductance RF
package incorporating DEI's patented
(1)
RF layout
techniques to minimize stray lead inductances for
optimum switching performance. For applications that do
not require the power dissipation of the DEIC420, the
driver is also available in a 28 pin SOIC package. See
the IXDD415SI data sheet for additional information. The
DEIC420 is a surface-mount device, and incorporates
patented RF layout techniques to minimize stray lead
inductances for optimum switching performance.
(1)
DEI U.S. Patent #4,891,686
DEIC420
Figure 1 - DEIC420 Functional Diagram
2
DEIC420
Unless otherwise noted, T
A
= 25
o
C, 8V
V
CC
30V
.
All voltage measurements with respect to DGND. DEIC420 configured as described in Test Conditions.
Electrical Characteristics
Symbol Parameter
Test
Conditions
Min
Typ
Max Units
V
IH
High input voltage
3.5
V
V
IL
Low
input
voltage
0.8 V
V
IN
Input
voltage
range
-5
V
CC
+ 0.3
V
I
IN
Input
current
0V
V
IN
V
CC
-10 10
A
V
OH
High
output
voltage
V
CC
- .025
V
V
OL
Low
output
voltage
0.025
V
R
OH
Output
resistance
@ Output high
I
OUT
= 10mA, V
CC
= 15V
0.4
0.6
R
OL
Output
resistance
@ Output Low
I
OUT
= 10mA, V
CC
= 15V
0.4
0.6
I
PEAK
Peak
output
current V
CC
= 15V
20 A
I
DC
Continuous
output
current
4
A
f
MAX
Maximum
frequency C
L
=4nF Vcc=15V
45
MHz
t
R
Rise
time
(1)
C
L
=1nF Vcc=15V V
OH
=2V to 12V
C
L
=4nF Vcc=15V V
OH
=2V to 12V
3
4
ns
ns
t
F
Fall
time
(1)
C
L
=1nF Vcc=15V V
OH
=12V to 2V
C
L
=4nF Vcc=15V V
OH
=12V to 2V
3
3.5
ns
ns
t
ONDLY
On-time
propagation
delay
(1)
C
L
=4nF Vcc=15V
32
38
ns
t
OFFDLY
Off-time
propagation
delay
(1)
C
L
=4nF Vcc=15V
29
35
ns
P
Wmin
Minimum pulse width
FWHM C
L
=1nF Vcc=15V
+3V to +3V C
L
=1nF Vcc=15V
8
9
ns
ns
V
CC
Power
supply
voltage
8 15 30 V
I
CC
Power supply current
V
IN
= 3.5V
V
IN
= 0V
V
IN
= + V
CC
1
0
3
10
10
mA
A
A
Absolute Maximum Ratings
Parameter Value
Supply Voltage
30V
All Other Pins
-0.3V to VCC + 0.3V
Power Dissipation
T
AMBIENT
25 oC
2W
T
CASE
25 oC
100W
Storage Temperature
-65oC to 150oC
Soldering Lead Temperature
(10 seconds maximum)
300oC
Parameter Value
Maximum Junction Temperature
150oC
Operating Temperature Range
-40oC to 85oC
Thermal Impedance (Junction To Case)
JC
0.13oC/W
(1)
Refer to Figures 3a and 3b
Specifications Subject To Change Without Notice
3
DEIC420
Lead Description - DEIC420
SYMBOL FUNCTION
DESCRIPTION
VCC Supply
Voltage
Positive power-supply voltage input. These leads provide power to
the entire chip. The range for this voltage is from 8V to 30V.
IN
Input
Input signal-TTL or CMOS compatible.
OUT Output
Driver Output. For application purposes, this lead is connected,
directly to the Gate of a MOSFET
GND Power
Ground
The system ground leads. Internally connected to all circuitry, these
leads provide ground reference for the entire chip. These leads
should be connected to a low noise analog ground plane for
optimum performance.
Note 1: Operating the device beyond parameters with listed "absolute maximum ratings" may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures
when handling and assembling this component.
Figure 2 - DEIC420 Package Photo And Outline
V
IN
Figure 3a - Characteristics Test Diagram
Figure 3b - Timing Diagram
INPUT
OUTPUT
5V
90%
2.5V
10%
0V
0V
Vcc
90%
10%
t
ONDLY
t
OFFDLY
t
R
t
F
PW
MIN
4
DEIC420
Fall Time vs. Load Capacitance
V
CC
= 15V, V
OH
= 12V To 2V
Load Capacitance (pF)
1k
2k
3k
4k
0
Fa
l
l
T
i
m
e
(
n
s
)
0
1
2
3
4
5
Fig. 5
Rise Time vs. Load Capacitance
V
CC
= 15V, V
OH
= 2V To 12V
Load Capacitance (pF)
1k
2k
3k
4k
0
R
i
se T
i
m
e
(
n
s)
0
1
2
3
4
5
Fig. 4
Typical Performance Characteristics
Propagation Delay Times vs. Input Voltage
C
L
=4nF V
CC
=15V
Input Voltage (V)
2
4
6
8
10
12
P
r
o
pag
at
i
on D
e
l
a
y (
n
s
)
0
10
20
30
40
50
t
ONDLY
t
OFFDLY
Fig. 8
Propagation Delay Times vs. Junction Temperature
C
L
= 4nF, V
CC
= 15V
Temperature (C)
-40
-20
0
20
40
60
80
100
120
Ti
m
e
(
n
s
)
10
15
20
25
30
35
40
45
50
t
OFFDLY
t
ONDLY
Fig. 9
Supply Current vs. Frequency
Vcc=15V
Frequency (MHz)
10
20
30
40
S
u
pp
l
y
C
u
r
r
en
t
(
A
)
0
1
2
3
4
5
6
4 nF
2 nF
1 nF
C
L
= 0
Fig. 6
Supply Current vs. Load Capacitance
Vcc=15V
Load Capacitance (pF)
0k
1k
2k
3k
4k
S
u
pp
l
y
C
u
r
r
en
t
(
A
)
0.1
1
10
1 MHz
5 MHz
10 MHz
20 MHz
30 MHz
40 MHz
Fig. 7
5
DEIC420
Propagation Delay vs. Supply Voltage
C
L
=4nF V
IN
=5V@100kHz
Supply Voltage (V)
8
10
12
14
16
18
P
r
o
pag
at
i
on D
e
l
a
y (
n
s
)
0
10
20
30
40
50
t
ONDLY
t
OFFDLY
Fig. 10
Typical Output Waveforms
Unless otherwise noted, all waveforms are taken driving a 1nF load, 1MHz repetition frequency, V
CC
=15V, Case Temperature = 25
C
Figure 11 3ns Rise Time
Figure 12 3ns Fall Time
Figure 13 <8ns Minimum Pulse Width
Figure 14 1MHz CW Repetition Frequency
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