2000 IXYS All rights reserved
1 - 1
V
RSM
V
(BR)min
x
V
RRM
Standard
Avalanche
V
V
V
Type
Types
1300
1300
1200
DS
1-12D
DSA
1-12D
1700
1750
1600
DSA
1-16D
1900
1950
1800
DSA
1-18D
x
Only for Avalanche Diodes
Symbol
Test Conditions
Maximum Ratings
I
FRMS
T
VJ
= T
VJM
7
A
I
F(AV)M
T
amb
= 45
C; R
thJA
= 38 K/W; 180
sine
2.3
A
T
amb
= 45
C; R
thJA
= 80 K/W; 180
sine
1.3
A
P
RSM
DSA types, T
VJ
= T
VJM
, t
p
= 10 s
1.6
kW
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
110
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
118
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
100
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
104
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
60
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
58
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
50
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
45
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
Weight
0.8
g
V
RRM
= 1200-1800 V
I
F(RMS)
= 7 A
I
F(AV)M
= 2.3 A
Features
q
Plastic standard package
q
Planar glassivated chips
Applications
q
Low power rectifiers
q
Field supply for DC motors
q
Power supplies
q
High voltage rectifiers
Advantages
q
Space and weight savings
q
Simple PCB mounting
q
Improved temperature and power
cycling
q
Reduced protection circuits
Symbol
Test Conditions
Characteristic Values
I
R
T
VJ
= T
VJM
; V
R
= V
RRM
0.7
mA
V
F
I
F
= 7 A; T
VJ
= 25
C
1.3
V
V
T0
For power-loss calculations only
0.8
V
r
T
T
VJ
= T
VJM
67
m
W
R
thJA
Forced air cooling with 1.5 m/s, T
amb
= 45
C
38
K/W
Soldered on to PC board, T
amb
= 45
C
80
K/W
d
S
Creepage distance on surface
8.5
mm
d
A
Strike distance through air
6.7
mm
a
Max. allowable acceleration
100
m/s
2
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
DS
1
DSA 1
Rectifier Diode
Avalanche Diode
A
C
A = Anode C = Cathode
A
C
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