DSEA 16-06BC
DSEC 16-06BC
2005 IXYS All rights reserved
HiPerDynFRED
TM
Epitaxial Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
Notes: Data given for T
VJ
= 25
O
C and per diode unless otherwise specified
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300
s, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
I
FAV
= 2x8 A
V
RRM
= 600 V
t
rr
= 30 ns
V
RSM
V
RRM
Type
V
V
600
600
DSEA 16-06BC
600
600
DSEC 16-06BC
Preliminary Data Sheet
Symbol
Conditions
Maximum Ratings
I
FRMS
19
A
I
FAVM
T
C
= 110C; rectangular, d = 0.5
8
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
50
A
E
AS
T
VJ
= 25C; non-repetitive
0.1
mJ
I
AS
= 0.9 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.1
A
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
T
L
1.6 mm (0.063 in) from case for 10 s
260
C
P
tot
T
C
= 25C
60
W
V
ISOL
50/60 Hz RMS; I
ISOL
1 mA
2500
V~
F
C
mounting force with clip
11...65 / 2.5...15
N / lb
Weight
2
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25C V
R
= V
RRM
60
A
T
VJ
= 150C V
R
= V
RRM
0.25
mA
V
F
I
F
= 8 A;
T
VJ
= 150C
1.65
V
T
VJ
= 25C
3.0
V
R
thJC
2.5
K/W
R
thCH
0.4
K/W
t
rr
I
F
= 1 A; -di/dt = 50 A/s;
30
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 12 A; -di
F
/dt = 100 A/s
1.4
1.9
A
T
VJ
= 100C
DSEA
DSEC
3
1
2
3
1
2
DS98825A (04/05)
ISOPLUS220
TM
E153432
G
D
S
Isolated back surface
DSEA 16-06BC
DSEC 16-06BC
2005 IXYS All rights reserved
Fig. 3. Peak reverse current I
RM
versus -di
F
/dt
Fig. 2. Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1. Forward current I
F
versus V
F
Fig. 4. Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5. Recovery time t
rr
versus -di
F
/dt
Fig. 6. Peak forward voltage V
FR
and
t
fr
versus di
F
/dt
Fig. 7. Transient thermal resistance junction-to-case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
1.449
0.0052
2
0.5578
0.0003
3
0.4931
0.0169
NOTE: Fig. 2 to Fig. 6 shows typical values
200
600
1000
0
400
800
40
60
80
100
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800 1000
0
20
40
60
0.0
0.1
0.2
0.3
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
2
4
6
8
10
100
1000
0
50
100
150
200
250
0
1
2
3
0
5
10
15
20
25
30
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
nC
A/
s
A/
s
t
rr
ns
t
fr
Z
thJC
A/
s
s
T
VJ
= 150C
T
VJ
= 100C
T
VJ
= 25C
I
RM
Q
r
V
FR
T
VJ
= 100C
V
R
= 300 V
T
VJ
= 100C
V
R
= 300 V
T
VJ
= 100C
V
R
= 300 V
DSEP 8-06B
t
fr
I
F
= 5 A
I
F
= 10 A
I
F
= 20 A
I
F
= 5 A
I
F
= 10 A
I
F
= 20 A
I
F
= 5 A
I
F
= 10 A
I
F
= 20 A
T
VJ
= 100C
I
F
= 10 A
DSEA 16-06BC
DSEC 16-06BC
2005 IXYS All rights reserved
DSEA 16-06BC
DSEC 16-06BC
ISOPLUS220 OUTLINE
Notes:
1. All terminals are tin plated.
2. Back surface (4) is electrically
isolated from pins 1,2 and 3.
Pin connections:
DSEA:
1 - Cathode
2 - Anode
3 - Cathode
DSEC:
1 -Anode
2 - Cathode
3 - Anode
ISOPLUS220 Outline
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