HiPerFRED
TM
Epitaxial Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
Notes: Data given for T
VJ
= 25
O
C and per diode unless otherwise specified
Average current per diode may be limited by center lead RMS current limit when
both diodes are conducting.
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300
s, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
I
FAV
= 2x30 A
V
RRM
= 600 V
t
rr
= 35 ns
V
RSM
V
RRM
Type
V
V
600
600
DSEA 59-06BC
DSEC 59-06BC
2003 IXYS All rights reserved
DSEA 59-06BC
DSEC 59-06BC
3
1
2
Symbol
Conditions
Maximum Ratings
I
FRMS
Lead current limit
45
A
I
FAVM
T
C
= 105C; rectangular, d = 0.5
30
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
200
A
E
AS
T
VJ
= 25C; non-repetitive
0.2
mJ
I
AS
= 1.3 A; L = 180 H
I
AR
V
A
= 1.5V
R
typical; f = 10 kHz; repetitive
0.1
A
T
VJ
-40...+175
C
T
VJM
175
C
T
stg
-40...+150
C
T
L
1.6 mm (0.063 in) from case for 10 s
260
C
P
tot
T
C
= 25C
136
W
V
ISOL
50/60 Hz RMS; I
ISOL
1 mA
2500
V~
F
C
Mounting force
11...65 / 2.5...15 N / lb
Weight
typical
2
g
Symbol
Conditions
Characteristic Values
typ. max.
I
R
T
VJ
= 25C
V
R
= V
RRM
250
A
T
VJ
= 150C
V
R
= V
RRM
2
mA
V
F
I
F
= 30 A;
T
VJ
= 150C
1.56
V
T
VJ
= 25C
2.51
V
R
thJC
1.1
K/W
R
thCH
0.6
K/W
t
rr
I
F
= 1 A; -di/dt = 200 A/s;
30
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V;
I
F
= 50 A; -di
F
/dt = 100 A/s
4
A
T
VJ
= 100C
DS98817A(07/03)
DSEA
DSEC
3
1
2
Preliminary Data Sheet
1
2
3
ISOPLUS220
TM
Isolated back surface*
E153432
See DSEP 29-06B data sheet for
characteristic curves
DSEA 59-06BC
DSEC 59-06BC
ISOPLUS220 Outline
Notes:
DSEA 29
1. Lead 1 = Cathode
2. Lead 2 = Common Anode
3. Lead 3 = Cathode
DSEC 29
1. Lead 1 = Anode
2. Lead 2 = Common Cathode
3. Lead 3 = Anode
Back surface 4 is electrically isolated
from leads 1, 2 and 3
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