2000 IXYS All rights reserved
1 - 2
Features
q
International standard package
q
Planar passivated chips
q
Very short recovery time
q
Extremely low switching losses
q
Low I
RM
-values
q
Soft recovery behaviour
q
Epoxy meets UL 94V-0
Applications
q
Antiparallel diode for high frequency
switching devices
q
Antisaturation diode
q
Snubber diode
q
Free wheeling diode in converters
and motor control circuits
q
Rectifiers in switch mode power
supplies (SMPS)
q
Inductive heating
q
Uninterruptible power supplies (UPS)
q
Ultrasonic cleaners and welders
Advantages
q
Avalanche voltage rated for reliable
operation
q
Soft reverse recovery for low
EMI/RFI
q
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
TO-220 AB
C
A
A
A C A
A = Anode, C = Cathode, TAB = Cathode
C (TAB)
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300
m
s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
HiPerFRED
TM
Epitaxial Diode
with common cathode and soft recovery
DSEC 16-06A
I
FAV
= 2x 10 A
V
RRM
= 600 V
t
rr
= 35 ns
V
RSM
V
RRM
Type
V
V
600
600
DSEC 16-06A
Symbol
Conditions
Maximum Ratings
I
FRMS
35
A
I
FAVM
T
C
= 135C; rectangular, d = 0.5
10
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
50
A
E
AS
T
VJ
= 25C; non-repetitive
0.1
mJ
I
AS
= 0.9 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.1
A
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
P
tot
T
C
= 25C
60
W
M
d
mounting torque
0.4...0.6
Nm
Weight
typical
2
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
x
T
VJ
= 25C
V
R
= V
RRM
60
m
A
T
VJ
= 150C V
R
= V
RRM
0.25
mA
V
F
y
I
F
= 10 A;
T
VJ
= 150C
1.42
V
T
VJ
= 25C
2.10
V
R
thJC
2.5
K/W
R
thCH
0.5
K/W
t
rr
I
F
= 1 A; -di/dt = 50 A/
m
s;
35
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 12 A; -di
F
/dt = 100 A/
m
s
4.4
A
T
VJ
= 100C
008
2000 IXYS All rights reserved
2 - 2
200
600
1000
0
400
800
70
80
90
100
110
120
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
5
10
15
20
0.0
0.3
0.6
0.9
1.2
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
10
20
30
40
100
1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0
0.5
1.0
1.5
2.0
2.5
0
5
10
15
20
25
30
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
m
s
A
V
nC
A/
m
s
A/
m
s
t
rr
ns
t
fr
Z
thJC
A/
m
s
s
DSEP 8-06A/DSEC16-06A
I
F
= 20A
I
F
= 10A
I
F
= 5A
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
I
F
= 10A
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
V
R
= 300V
I
F
= 20A
I
F
= 10A
I
F
= 5A
Q
r
I
RM
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
I
F
= 20A
I
F
= 10A
I
F
= 5A
t
fr
V
FR
Fig. 7 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
1.449
0.0052
2
0.5578
0.0003
3
0.4931
0.0169
T
VJ
=150C
T
VJ
=100C
T
VJ
= 25C
NOTE: Fig. 2 to Fig. 6 shows typical values
DSEC 16-06A
008
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