HiPerDynFRED
TM
Epitaxial Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
Notes: Data given for T
VJ
= 25
O
C and per diode unless otherwise specified
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300
s, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
See DSEC 16-06A data sheet for
characteristic curves.
I
FAV
= 2x8 A
V
RRM
= 600 V
t
rr
= 35 ns
V
RSM
V
RRM
Type
V
V
600
600
DSEA 16-06AC
600
600
DSEC 16-06AC
Preliminary Data Sheet
2003 IXYS All rights reserved
DSEA 16-06AC
DSEC 16-06AC
3
1
2
Symbol
Conditions
Maximum Ratings
I
FRMS
35
A
I
FAVM
T
C
= 120C; rectangular, d = 0.5
8
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
50
A
E
AS
T
VJ
= 25C; non-repetitive
0.1
mJ
I
AS
= 0.9 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.1
A
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
T
L
1.6 mm (0.063 in) from case for 10 s
260
C
P
tot
T
C
= 25C
50
W
V
ISOL
50/60 Hz RMS; I
ISOL
1 mA
2500
V~
F
C
mounting force with clip
11...65 / 2.5...15
N / lb
Weight typical
2
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25C V
R
= V
RRM
60
A
T
VJ
= 150C V
R
= V
RRM
0.25
mA
V
F
I
F
= 10 A;
T
VJ
= 150C
1.42
V
T
VJ
= 25C
2.10
V
R
thJC
3
K/W
R
thCH
0.6
K/W
t
rr
I
F
= 1 A; -di/dt = 50 A/s;
35
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 12 A; -di
F
/dt = 100 A/s
3.5
4.4
A
T
VJ
= 100C
DSEA
DSEC
3
1
2
DS98831(9/03)
1
2
3
ISOPLUS 220
TM
Isolated back surface*
DSEA 16-06AC
DSEC 16-06AC
Note: All terminals are solder plated.
DSEA:
1 - Cathode
2 - Anode
3 - Cathode
DSEC:
1 -Anode
2 - Cathode
3 - Anode
ISOPLUS220 Outline
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