2000 IXYS All rights reserved
1 - 2
V
RSM
V
RRM
Type
V
V
1200
1200
DSEI 12-12A
Symbol
Test Conditions
Maximum Ratings
I
FRMS
T
VJ
= T
VJM
25
A
I
FAVM
x
T
C
= 100
C; rectangular, d = 0.5
11
A
I
FRM
t
P
< 10
m
s; rep. rating, pulse width limited by T
VJM
150
A
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
75
A
t = 8.3 ms (60 Hz), sine
80
A
T
VJ
= 150
C; t = 10 ms (50 Hz), sine
65
A
t = 8.3 ms (60 Hz), sine
70
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
28
A
2
s
t = 8.3 ms (60 Hz), sine
27
A
2
s
T
VJ
= 150
C; t = 10 ms (50 Hz), sine
21
A
2
s
t = 8.3 ms (60 Hz), sine
20
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
P
tot
T
C
= 25
C
78
W
M
d
Mounting torque
0.4...0.6
Nm
Weight
2
g
Symbol
Test Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25
C
V
R
= V
RRM
250
m
A
T
VJ
= 25
C
V
R
= 0.8 V
RRM
150
m
A
T
VJ
= 125
C
V
R
= 0.8 V
RRM
4
mA
V
F
I
F
= 12 A;
T
VJ
= 150
C
2.2
V
T
VJ
= 25
C
2.6
V
V
T0
For power-loss calculations only
1.65
V
r
T
T
VJ
= T
VJM
46.2
m
W
R
thJC
1.6
K/W
R
thCK
0.5
K/W
R
thJA
60
K/W
t
rr
I
F
= 1 A; -di/dt = 50 A/
m
s; V
R
= 30 V; T
VJ
= 25
C
50
70
ns
I
RM
V
R
= 540 V;
I
F
= 12 A; -di
F
/dt = 100 A/
m
s
6.5
7.2
A
L
0.05
m
H; T
VJ
= 100
C
DSEI 12
I
FAVM
= 11 A
V
RRM
= 1200 V
t
rr
= 50 ns
x
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Features
q
International standard package
JEDEC TO-220 AC
q
Planar passivated chips
q
Very short recovery time
q
Extremely low switching losses
q
Low I
RM
-values
q
Soft recovery behaviour
q
Epoxy meets UL 94V-0
Applications
q
Antiparallel diode for high frequency
switching devices
q
Anti saturation diode
q
Snubber diode
q
Free wheeling diode in converters
and motor control circuits
q
Rectifiers in switch mode power
supplies (SMPS)
q
Inductive heating and melting
q
Uninterruptible power supplies (UPS)
q
Ultrasonic cleaners and welders
Advantages
q
High reliability circuit operation
q
Low voltage peaks for reduced
protection circuits
q
Low noise switching
q
Low losses
q
Operating at lower temperature or
space saving by reduced cooling
Fast Recovery
Epitaxial Diode (FRED)
A
C
A = Anode, C = Cathode
TO-220 AC
C
C
A
0
3
3
2000 IXYS All rights reserved
2 - 2
DSEI 12, 1200 V
Fig. 1 Forward current
Fig. 2 Recovery charge versus -di
F
/dt.
Fig. 3 Peak reverse current versus
versus voltage drop.
-di
F
/dt.
Dimensions
0
100
200
300
400
0
10
20
30
40
50
60
T
VJ
=125C
di
F
/dt
t
fr
V
FR
t
fr
ns
0
200
400
600
800
1000
1200
V
V
FR
0
100
200
300
400
0.0
0.2
0.4
0.6
0.8
1.0
I
F
=5.5A
I
F
=11A
I
F
=22A
I
F
=11A
V
R
=540V
T
VJ
=100C
-di
F
/dt
s
t
rr
typ.
max.
0
40
80
120
160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
K
f
Q
R
I
RM
C
T
J
0
100
200
300
400
0
5
10
15
20
25
30
I
F
=5.5A
I
F
=11A
I
F
=22A
I
F
=11A
T
VJ
=100C
A
max.
typ.
V
R
=540V
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
A/s
-di
F
/dt
I
RM
-di
F
/dt
C
Q
r
typ.
max.
V
R
= 540V
0
1
2
3
4
0
5
10
15
20
25
30
T
VJ
=100C
V
V
F
I
F
T
VJ
=150C
T
VJ
=100C
T
VJ
=25C
A
I
F
=11A
I
F
=22A
I
F
=11A
I
F
=5.5A
I
F
=11A
A/s
A/s
A/s
Fig. 7 Transient thermal impedance junction to case.
Fig. 4 Dynamic parameters versus
Fig. 5 Recovery time versus -di
F
/dt.
Fig. 6 Peak forward voltage
junction temperature.
versus di
F
/dt.
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
12.70 14.73
0.500 0.580
B
14.23 16.51
0.560 0.650
C
9.66 10.66
0.380 0.420
D
3.54
4.08
0.139 0.161
E
5.85
6.85
0.230 0.420
F
2.54
3.42
0.100 0.135
G
1.15
1.77
0.045 0.070
H
-
6.35
-
0.250
J
0.64
0.89
0.025 0.035
K
4.83
5.33
0.190 0.210
L
3.56
4.82
0.140 0.190
M
0.38
0.56
0.015 0.022
N
2.04
2.49
0.080 0.115
Q
0.64
1.39
0.025 0.055
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