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Электронный компонент: DSEI2x101-12P

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2001 IXYS All rights reserved
1 - 2
D5
Symbol
Conditions
Maximum Ratings (per diode)
I
FRMS
T
VJ
= T
VJM
130
A
I
FAVM


T
C
= 50
C; rectangular; d = 0.5
91
A
I
FRM
t
P
< 10 s; rep. rating; pulse width limited by T
VJM
tbd
A
I
FSM
T
VJ
= 45
C; t = 10 ms (50 Hz), sine
900
A
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
P
tot
T
C
= 25
C
250
W
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque (M4)
1.5 - 2.0
Nm
14 - 18
lb.in.
Weight
24
g
Symbol
Conditions
Characteristic Values (per diode)
typ.
max.
I
R
T
VJ
= 25
C V
R
= V
RRM
3.0
mA
T
VJ
= 25
C V
R
= 0.8 V
RRM
1.5
mA
T
VJ
= 125
C V
R
= 0.8 V
RRM
15
mA
V
F
I
F
= 100 A;
T
VJ
= 150
C
1.61
V
T
VJ
= 25
C
1.87
V
V
T0
For power-loss calculations only
1.01
V
r
T
T
VJ
= T
VJM
6.1
m
R
thJC
0.5
K/W
R
thCK
0.05
K/W
t
rr
I
F
= 1 A; -di/dt = 400 A/s
40
60
ns
V
R
= 30 V; T
VJ
= 25
C
I
RM
V
R
= 100 V; I
F
= 75 A; -di
F
/dt = 200 A/s
24
30
A
L
0.05 H; T
VJ
= 100
C
d
S
Creeping distance on surface
min. 11.2
mm
d
A
Creeping distance in air
min. 11.2
mm
a
Allowable acceleration
max. 50
m/s
DSEI 2x101
I
FAVM
= 2x91 A
V
RRM
= 1200 V
t
rr
= 40 ns
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
Features
2 independent FRED in 1 package
Isolation voltage 3000 V~
Planar passivated chips
Leads suitable for PC board soldering
Very short recovery time
Soft recovery behaviour
Applications
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
Low noise switching
Small and light weight
Fast Recovery
Epitaxial Diode (FRED)
139
V
RSM
V
RRM
Type
V
V
1200
1200
DSEI 2x 101-12P
IXYS reserves the right to change limits, test conditions and dimensions
AC-1
IK-10
LN-9
VX-18
2001 IXYS All rights reserved
2 - 2
D5
DSEI 2x 101-12P
200
600
1000
0
400
800
200
250
300
350
400
450
500
0.001
0.01
0.1
1
10
0.1
1
0
40
80
120
160
0.4
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
10
30
50
0
20
40
60
0.0
0.5
1.0
1.5
V
FR
di
F
/dt
V
200
600
1000
0
400
800
20
60
100
140
0
40
80
120
100
1000
0
2
4
6
8
10
12
14
16
0.0
0.5
1.0
1.5
2.0
0
25
50
75
100
125
150
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
C
A/
s
A/
s
t
rr
ns
t
fr
Z
thJC
A/
s
s
0.05
0.1
0.2
0.3
0.5
D=0.7
0.05
DSEI 2x101-12
Single Pulse
I
F
=200A
I
F
=100A
I
F
= 50A
T
VJ
= 100C
V
R
= 600V
T
VJ
= 100C
I
F
= 100A
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
T
VJ
=100C
T
VJ
=150C
T
VJ
= 100C
V
R
= 600V
T
VJ
= 100C
V
R
=600V
I
F
=200A
I
F
=100A
I
F
= 50A
Q
r
I
RM
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
I
F
=200A
I
F
=100A
I
F
= 50A
t
fr
V
FR
Fig. 7 Transient thermal impedance junction to case at various duty cycles
T
VJ
= 25C
Dimensions in mm (1mm = 0.0394")