2001 IXYS All rights reserved
1 - 2
D5
Symbol
Conditions
Maximum Ratings (per diode)
I
FRMS
T
VJ
= T
VJM
100
A
I
FAVM
T
C
= 50
C; rectangular; d = 0.5
52
A
I
FRM
t
P
< 10 s; rep. rating; pulse width limited by T
VJM
700
A
I
FSM
T
VJ
= 45
C; t = 10 ms (50 Hz), sine
450
A
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
P
tot
T
C
= 25
C
180
W
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque (M4)
1.5 - 2.0
Nm
14 - 18
lb.in.
Weight
18
g
Symbol
Conditions
Characteristic Values (per diode)
typ.
max.
I
R
T
VJ
= 25
C V
R
= V
RRM
2.2
mA
T
VJ
= 25
C V
R
= 0.8 V
RRM
0.5
mA
T
VJ
= 125
C V
R
= 0.8 V
RRM
14
mA
V
F
I
F
= 60 A;
T
VJ
= 150
C
2.15
V
T
VJ
= 25
C
2.50
V
V
T0
For power-loss calculations only
1.65
V
r
T
T
VJ
= T
VJM
8.3
m
R
thJC
0.7
K/W
R
thCK
0.05
K/W
t
rr
I
F
= 1 A; -di/dt = 200 A/s
40
60
ns
V
R
= 30 V; T
VJ
= 25
C
I
RM
V
R
= 540 V; I
F
= 60 A; -di
F
/dt = 480 A/s
32
36
A
L
0.05 H; T
VJ
= 100
C
d
S
Creeping distance on surface
min. 11.2
mm
d
A
Creeping distance in air
min. 11.2
mm
a
Allowable acceleration
max. 50
m/s
DSEI 2x61
I
FAVM
= 2x52 A
V
RRM
= 1200 V
t
rr
= 40 ns
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
Features
2 independent FRED in 1 package
Isolation voltage 3000 V~
Planar passivated chips
Leads suitable for PC board soldering
Very short recovery time
Soft recovery behaviour
Applications
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
Low noise switching
Small and light weight
Fast Recovery
Epitaxial Diode (FRED)
139
V
RSM
V
RRM
Type
V
V
1200
1200
DSEI 2x 61-12P
IXYS reserves the right to change limits, test conditions and dimensions
2001 IXYS All rights reserved
2 - 2
D5
0
200
400
600
800
1000
0.0
0.2
0.4
0.6
0.8
1.0
10
100
1000
0
2
4
6
8
10
12
0
200
400
600
800 1000
0
20
40
60
80
0
200
400
600
800
1000
0
10
20
30
40
50
60
T
VJ
=125C
di
F
/dt
t
fr
V
FR
t
fr
ns
0
200
400
600
800
1000
1200
A/s
V
V
FR
V
R
=540V
T
VJ
=100C
-di
F
/dt
s
t
rr
typ.
0
40
80
120
160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
K
f
Q
R
I
RM
C
T
J
T
VJ
=100C
A
max.
typ.
V
R
=540V
I
RM
-di
F
/dt
C
Q
r
typ.
max.
V
R
= 540V
0
1
2
3
4
0
10
20
30
40
50
60
70
80
90
T
VJ
=100C
V
V
F
I
F
T
VJ
=150C
T
VJ
=100C
T
VJ
= 25C
A
I
F
=60A
I
F
=120A
I
F
=60A
I
F
=30A
I
F
=60A
A/s
I
F
=30A
I
F
=60A
I
F
=120A
I
F
=60A
I
F
=30A
I
F
=60A
I
F
=60A
I
F
=120A
A/s
A/s
-di
F
/dt
max.
DSEI 2x 61-12P
Fig. 7 Transient thermal impedance junction to case.
Fig. 1 Forward current
Fig. 2 Recovery charge versus -di
F
/dt.
Fig. 3 Peak reverse current versus
versus voltage drop.
-di
F
/dt.
Fig. 4 Dynamic parameters versus
Fig. 5 Recovery time versus -di
F
/dt.
Fig. 6 Peak forward voltage
junction temperature.
versus di
F
/dt.
Dimensions
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