1999 IXYS All rights reserved
1 - 1
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
q
International standard package
miniBLOC
q
Isolation voltage 2500 V~
q
UL registered E 72873
q
2 independent FRED in 1 package
q
Planar passivated chips
q
Very short recovery time
q
Extremely low switching losses
q
Low I
RM
-values
q
Soft recovery behaviour
Applications
q
Antiparallel diode for high frequency
switching devices
q
Antisaturation diode
q
Snubber diode
q
Free wheeling diode in converters
and motor control circuits
q
Rectifiers in switch mode power
supplies (SMPS)
q
Inductive heating
q
Uninterruptible power supplies (UPS)
q
Ultrasonic cleaners and welders
Advantages
q
Avalanche voltage rated for reliable
operation
q
Soft reverse recovery for low
EMI/RFI
q
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see CD "Databook 2000"
miniBLOC, SOT-227 B
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300
s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
DSEP 2x 35-06C
I
FAV
= 2x 35 A
V
RRM
= 600 V
t
rr
= 20 ns
V
RSM
V
RRM
Type
V
V
600
600
DSEP 2x 35-06C
Symbol
Test Conditions
Maximum Ratings
I
FRMS
49
A
I
FAVM
T
C
= 80C; rectangular, d = 0.5
35
A
I
FRM
t
P
< 10
s; rep. rating, pulse width limited by T
VJM
tbd
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
300
A
E
AS
T
VJ
= 25C; non-repetitive
1.2
mJ
I
AS
= 3 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.3
A
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
P
tot
T
C
= 25C
165
W
V
ISOL
50/60 Hz, RMS
2500
V~
I
ISOL
1 mA
M
d
mounting torque (M4)
1.1-1.5/9-13
Nm/lb.in.
terminal connection torque (M4)
1.1-1.5/9-13
Nm/lb.in.
Weight
typical
30
g
Symbol
Test Conditions
Characteristic Values
typ.
max.
I
R
x
V
R
= V
RRM
; T
VJ
= 25C
0.25
mA
T
VJ
= 150C
1.0
mA
V
F
y
I
F
= 35 A;
T
VJ
= 150C
1.83
V
T
VJ
= 25C
2.50
V
R
thJC
0.9
K/W
R
thCH
with heatsink compound
0.1
K/W
t
rr
I
F
= 1 A; -di/dt = 300 A/
s;
20
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/
s
4.5
7.0
A
T
VJ
= 100C
940
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