2002 IXYS All rights reserved
1 - 2
DSEP 2x 60-12A
I
FAV
= 2x 60 A
V
RRM
= 1200 V
t
rr
= 40 ns
V
RSM
V
RRM
Type
V
V
1200
1200
DSEP 2x 60-12A
Symbol
Conditions
Maximum Ratings
I
FRMS
100
A
I
FAVM
T
C
= 80C; rectangular, d = 0.5
60
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
800
A
E
AS
T
VJ
= 25C; non-repetitive
28
mJ
I
AS
= 16 A; L = 180 H
I
AR
V
A
= 1.25V
R
typ.; f = 10 kHz; repetitive
1.6
A
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
P
tot
T
C
= 25C
200
W
V
ISOL
50/60 Hz, RMS
2500
V~
I
ISOL
1 mA
M
d
mounting torque (M4)
1.1-1.5/9-13
Nm/lb.in.
terminal connection torque (M4)
1.1-1.5/9-13
Nm/lb.in.
Weight
typical
30
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25C
V
R
= V
RRM
1
mA
T
VJ
= 150C V
R
= V
RRM
4
mA
V
F
I
F
= 60 A;
T
VJ
= 125C
1.70
V
T
VJ
= 25C
2.42
V
R
thJC
0.6
K/W
R
thCH
0.1
K/W
t
rr
I
F
= 1 A; -di/dt = 400 A/
s;
40
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 200 A; -di
F
/dt = 100 A/
s
8
A
T
VJ
= 100C
227
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
International standard package
miniBLOC
Isolation voltage 2500 V~
UL registered E 72873
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see Outlines.pdf
miniBLOC, SOT-227 B
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300
s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
2002 IXYS All rights reserved
2 - 2
NOTE: Fig. 2 to Fig. 6 shows typical values
DSEP 2x 60-12A
200
600
1000
0
400
800
200
220
240
260
280
300
0.00001
0.0001
0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
20
40
60
0.0
0.4
0.8
1.2
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
40
80
120
100
1000
0.0
2.5
5.0
7.5
10.0
12.5
15.0
0
1
2
3
0
20
40
60
80
100
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
C
A/
s
A/
s
t
rr
ns
t
fr
A/
s
s
DSEP 2x61-12A
Z
thJC
I
F
= 120A
I
F
= 60A
I
F
= 30A
T
VJ
= 100C
V
R
= 600V
T
VJ
= 100C
I
F
= 60A
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
T
VJ
= 100C
V
R
= 600V
T
VJ
= 100C
V
R
= 600V
I
F
= 120A
I
F
= 60A
I
F
= 30A
Q
r
I
RM
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
I
F
= 120A
I
F
= 60A
I
F
= 30A
t
fr
V
FR
Fig. 7 Transient thermal resistance junction to case
T
VJ
=150C
T
VJ
=100C
T
VJ
= 25C
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.212
0.0055
2
0.248
0.0092
3
0.063
0.0007
4
0.077
0.0391
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