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DSEP 40-03AS
Advanced Technical Information
I
FAV
= 40 A
V
RRM
= 300 V
t
rr
= 35 ns
V
RSM
V
RRM
Type
V
V
300
300
DSEP 40-03AS
Symbol
Conditions
Maximum Ratings
I
FRMS
35
A
I
FAVM
rect., d = 0.5; T
C
= 120C
40
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
300
A
E
AS
T
VJ
= 25C; non-repetitive
4
mJ
I
AS
= 9 A; L = 100 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.9
A
T
VJ
-40...+175
C
T
VJM
175
C
T
stg
-40...+150
C
P
tot
T
C
= 25C
175
W
Weight
typical
2
g
Symbol
Conditions
Characteristic max. Values
I
R
V
R
= V
RRM
; T
VJ
= 25C
1
A
V
R
= V
RRM
; T
VJ
= 150C
100
A
V
F
I
F
= 40 A;
T
VJ
= 150C
1.11
V
T
VJ
= 25C
1.42
V
R
thJC
0.85
K/W
t
rr
typ.
35
ns
I
RM
typ.
3.5
A
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
International standard package
Planar passivated chips
Very short recovery time
l
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0%
Pulse Width = 300 s, Duty Cycle < 2.0%
Data according to IEC 60747 and per diode unless otherwise specified.
C
A
A = Anode, C = Cathode, TAB = Cathode
C (TAB)
A
A
TO-263
V
R
= 100 V;
I
F
= 40 A;
-di
F
/dt = 200 A/s; T
VJ
= 25C
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