2003 IXYS All rights reserved
1 - 2
311
DSEP 60-04A
IXYS reserves the right to change limits, test conditions and dimensions.
I
FAV
= 60 A
V
RRM
= 400 V
t
rr
= 30 ns
V
RSM
V
RRM
Type
V
V
400
400
DSEP 60-04A
Symbol
Conditions
Maximum Ratings
I
FRMS
70
A
I
FAVM
T
C
= 120C; rectangular, d = 0.5
60
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
600
A
E
AS
T
VJ
= 25C; non-repetitive
1.6
mJ
I
AS
= 3.5 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.4
A
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
P
tot
T
C
= 25C
230
W
M
d
mounting torque
0.8...1.2
Nm
Weight
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25C; V
R
= V
RRM
650
A
T
VJ
= 150C; V
R
= V
RRM
2
mA
V
F
I
F
= 60 A;
T
VJ
= 150C
1.01
V
T
VJ
= 25C
1.24
V
R
thJC
0.65
K/W
R
thCH
0.25
K/W
t
rr
I
F
= 1 A; -di/dt = 300 A/s;
30
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 130 A; -di
F
/dt = 100 A/s
6.0
7.5
A
T
VJ
= 100C
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see Outlines.pdf
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300
s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
A = Anode, C = Cathode, TAB = Cathode
TO-247 AD
C
A
C (TAB)
C
A
2003 IXYS All rights reserved
2 - 2
311
DSEP 60-04A
IXYS reserves the right to change limits, test conditions and dimensions.
200
600
1000
0
400
800
40
60
80
100
120
140
160
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
10
20
30
40
50
1.55
1.60
1.65
1.70
1.75
1.80
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
10
20
30
40
50
60
70
100
1000
0
500
1000
1500
2000
2500
3000
0.0
0.4
0.8
1.2
1.6
0
20
40
60
80
100
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
nC
A/
s
A/
s
t
rr
ns
A/
s
DSEP 60-04A
Z
thJC
T
VJ
= 150C
T
VJ
= 100C
T
VJ
= 25C
V
FR
t
fr
I
RM
Q
r
t
fr
s
T
VJ
= 100C
V
R
= 200 V
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
T
VJ
= 100C
V
R
= 200 V
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
T
VJ
= 100C
V
R
= 200 V
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
T
VJ
= 100C
I
F
= 60 A
Fig. 3 Typ. peak reverse current I
RM
Fig. 2 Typ. reverse recovery charge Q
r
Fig. 1 Forward current I
F
versus V
F
Fig. 4 Typ. dynamic parameters Q
r
, I
RM
Fig. 5 Typ. recovery time t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
Fig. 7 Transient thermal resistance junction to case
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