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0504
Advanced Technical Information
I
FAV
=
75 A
V
RRM
= 600 V
t
rr
=
35 ns
DSEP 75-06AR
V
RSM
V
RRM
Type
V
V
600
600
DSEP 75-06AR
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
A = Anode, C = Cathode, NC = not connected
ISOPLUS 247
TM
NC
A
TAB
Symbol
Conditions
Maximum Ratings
I
FRMS
70
A
I
FAVM
T
C
= 110C; rectangular, d = 0.5
75
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
1000
A
E
AS
T
VJ
= 25C; non-repetitive
0.4
mJ
I
AS
= 1.8 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.2
A
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
P
tot
T
C
= 25C; T
VJ
= 175C
300
W
V
ISOL
50/60 Hz RMS; I
ISOL
1 mA; leads-to-tab
2500
V~
M
f
mounting force
20...120
N
Weight
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
V
R
= V
RRM
; T
VJ
= 25C
1000
A
T
VJ
= 150C
4
mA
V
F
I
F
= 75 A;
T
VJ
= 150C
1.38
V
T
VJ
= 25C
2.02
V
R
thJC
0.5
K/W
R
thCH
0.25
K/W
t
rr
I
F
= 1 A; -di/dt = 400 A/s;
35
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 200 A;
7.9
10.2
A
-di
F
/dt = 100 A/s; T
VJ
= 100C
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0%
Pulse Width = 300 s, Duty Cycle < 2.0%
Data according to IEC 60747 and per diode unless otherwise specified.
C
C
A
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