1999 IXYS All rights reserved
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Preliminary Data
HiPerFRED
TM
Epitaxial Diode
with soft recovery
(Electrically Isolated Back Surface)
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300 s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
Features
q
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
q
Low cathode to tab capacitance (<25pF)
q
International standard package
q
Planar passivated chips
q
Very short recovery time
q
Extremely low switching losses
q
Low I
RM
-values
q
Soft recovery behaviour
q
Epoxy meets UL 94V-0
q
Isolated and UL registered E153432
Applications
q
Antiparallel diode for high frequency
switching devices
q
Antisaturation diode
q
Snubber diode
q
Free wheeling diode in converters
and motor control circuits
q
Rectifiers in switch mode power
supplies (SMPS)
q
Inductive heating
q
Uninterruptible power supplies (UPS)
q
Ultrasonic cleaners and welders
Advantages
q
Avalanche voltage rated for reliable
operation
q
Soft reverse recovery for low EMI/RFI
q
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see IXYS CD 2000
A = Anode, C = Cathode
* Patent pending
ISOPLUS 247
TM
A
C
Isolated back surface *
C
A
DSEP 9-06CR
I
FAV
= 9 A
V
RRM
= 600 V
t
rr
= 15 ns
V
RSM
V
RRM
Type
V
V
600
600
DSEP 9-06CR
Symbol
Conditions
Maximum Ratings
I
FRMS
13
A
I
FAVM
T
C
= 95C; rectangular, d = 0.5
9
A
I
FRM
t
P
< 10 s; rep. rating, pulse width limited by T
VJM
tbd
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
80
A
E
AS
T
VJ
= 25C; non-repetitive
0.5
mJ
I
AS
= 2 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.2
A
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
P
tot
T
C
= 25C
60
W
V
ISOL
50/60 Hz RMS; I
ISOL
1 mA
2.5
kV
Weight
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
x
T
VJ
= 25C
V
R
= V
RRM
50
A
T
VJ
= 150C V
R
= V
RRM
0.2
mA
V
F
y
I
F
= 9 A;
T
VJ
= 150C
2.9
V
T
VJ
= 25C
4.0
V
R
thJC
2.5
K/W
R
thCH
0.25
K/W
t
rr
I
F
= 1 A; -di/dt = 200 A/s;
15
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 10 A; -di
F
/dt = 100 A/s
2.0
A
T
VJ
= 100C
945
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