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Электронный компонент: DSI30-16A

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2000 IXYS All rights reserved
1 - 2
V
RSM
V
RRM
TO-220
TO-263
V
V
900
800
DSI 30-08A
DSI 30-08AS
1300
1200
DSI 30-12A
DSI 30-12AS
1500
1400
DSI 30-14A
DSI 30-14AS
1700
1600
DSI 30-16A
DSI
30-16AS
Symbol
Conditions
Characteristic Values
I
R
T
VJ
= T
VJM
; V
R
= V
RRM
1
mA
V
F
I
F
= 45 A; T
VJ
= 25
C
1.45
V
V
T0
For power-loss calculations only
0.85
V
r
T
T
VJ
= T
VJM
13
m
W
R
thJC
DC current
1.0
K/W
V
RRM
= 800-1600 V
I
F(AV)M
= 30 A
Symbol
Conditions
Maximum Ratings
I
F(AV)M
T
C
= 95
C; 180
sine
30
A
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
300
A
V
R
= 0 V;
t = 8.3 ms (60 Hz), sine
330
A
T
VJ
= 150
C;
t = 10 ms (50 Hz), sine
270
A
V
R
= 0 V;
t = 8.3 ms (60 Hz), sine
300
A
I
2
t
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
450
A
2
s
V
R
= 0 V;
t = 8.3 ms (60 Hz), sine
460
A
2
s
T
VJ
= 150
C;
t = 10 ms (50 Hz), sine
365
A
2
s
V
R
= 0 V;
t = 8.3 ms (60 Hz), sine
380
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
M
d
Mounting torque
0.4...0.6
Nm
Weight
2
g
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
12.70 14.73
0.500
0.580
B
14.23 16.51
0.560
0.650
C
9.66 10.66
0.380
0.420
D
3.54
4.08
0.139
0.161
E
5.85
6.85
0.230
0.420
F
2.54
3.42
0.100
0.135
G
1.15
1.77
0.045
0.070
H
-
6.35
-
0.250
J
0.64
0.89
0.025
0.035
K
4.83
5.33
0.190
0.210
L
3.56
4.82
0.140
0.190
M
0.38
0.56
0.015
0.022
N
2.04
2.49
0.080
0.115
Q
0.64
1.39
0.025
0.055
TO-220 Outline
TO-263 AA Outline
DSI 30
033
Rectifier Diode
A
C
Data according to IEC 60747 and refer to a single diode
IXYS reserves the right to change limits, test conditions and dimensions
Features
q
International standard packages
JEDEC TO-263 AA surface mountable
q
Planar passivated chips
q
Epoxy meets UL 94V-0 flammability
classification
A
A
TO-263 AA
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
TO-220 AC
C
A
C (TAB)
2000 IXYS All rights reserved
2 - 2
0.001
0.01
0.1
1
0
50
100
150
200
250
2
3
4
5 6 7 8 9
1
10
10
2
10
3
0.0
0.4
0.8
1.2
1.6
0
10
20
30
40
50
0
10
20
30
0
20
40
60
0
20
40
60
80 100 120 140
0.001
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
2
t
I
FSM
I
F
A
V
F
t
s
t
ms
P
tot
W
I
d(AV)M
A
T
amb
t
s
K/W
A
2
s
0
20 40 60 80 100 120 140
0
5
10
15
20
25
30
35
I
F(AV)M
T
C
A
V
A
C
C
DSI30
T
VJ
= 45C
50Hz, 80% V
RRM
V
R
= 0 V
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current
Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180
Fig. 5 Max. forward current versus
case temperature
Fig. 6 Transient thermal impedance junction to case
R
thHA
:
1 K/W
2 K/W
3 K/W
5 K/W
7 K/W
10 K/W
15 K/W
T
VJ
= 150C
T
VJ
=150C
T
VJ
= 25C
T
VJ
= 150C
Z
thJC
T
VJ
= 45C
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.01362
0.0001
2
0.1962
0.00316
3
0.267
0.023
4
0.3052
0.4
5
0.218
0.15
DSI 30