2005 IXYS All rights reserved
1 - 2
510
DSSS 35-008AR
IXYS reserves the right to change limits, test conditions and dimensions.
I
FAV
= 2x35 A
V
RRM
= 80 V
V
F
= 0.68 V
Symbol
Conditions
Maximum Ratings
I
FRMS
70
A
I
FAV
T
C
= 150C; rectangular, d = 0.5
35
A
I
FAV
T
C
= 150C; rectangular, d = 0.5; per device
70
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
600
A
E
AS
I
AS
= 35 A; L = 100 H; T
VJ
= 25C; non repetitive
60
mJ
I
AR
V
A
=1.5 V
RRM
typ.; f=10 kHz; repetitive
2
A
(dv/dt)
cr
5000
V/s
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
P
tot
T
C
= 25C
190
W
F
C
mounting force with clip
20...120
N
V
ISOL
50/60 Hz, RMS, t = 1 s, leads-to-tab
3000
V~
Weight
typical
6
g
V
RSM
V
RRM
Type
V
V
80
80
DSSS 35-008AR
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25C V
R
= V
RRM
4
mA
T
VJ
= 125C V
R
= V
RRM
10
mA
V
F
I
F
= 35 A;
T
VJ
= 125C
0.68
V
I
F
= 35 A;
T
VJ
=
25C
0.79
V
I
F
= 70 A;
T
VJ
= 125C
0.86
V
R
thJC
0.8
K/W
R
thCH
0.25
K/W
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
Power Schottky Rectifier
dual diode
Features
International standard package
Very low V
F
Extremely low switching losses
Low I
RM
-values
Isolated and
UL registered E153432
Applications
Rectifiers in switch mode power
supplies (SMPS)
Free wheeling diode in low voltage
converters
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Dimensions see Outlines.pdf
C = Cathode, A = Anode
ISOPLUS 247
TM
A
C
A/C
Isolated
back surface *
A
C/A
C
2005 IXYS All rights reserved
2 - 2
510
DSSS 35-008AR
IXYS reserves the right to change limits, test conditions and dimensions.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
0
10 20 30 40 50 60 70
0.0001
0.001
0.01
0.1
1
10
100
10
30
50
70
0
20
40
60
0
10
20
30
40
50
60
1e-5
1e-4
1e-3
1e-2
1e-1
1e+0
1e+1
0.01
0.1
1
0
50
100
150
200
0
20
40
60
80
I
F(AV)
T
C
C
I
F(AV)
t
s
K/W
10
100
1000
10000
100
1000
10000
I
FSM
t
P
A
0
10 20 30 40 50 60 70
100
1000
10000
C
T
I
R
I
F
A
V
F
V
R
V
R
V
pF
V
mA
P
(AV)
W
Z
thJC
V
A
s
DC
25C
50C
75C
100C
125C
T
VJ
= 25C
d = 0.5
d =
DC
0.5
0.33
0.25
0.17
0.08
Single Pulse
0.17
0.25
0.33
D = 0.5
T
VJ
=175C
150C
A
T
VJ
=
150C
125C
25C
DSSS 35-008AR
0.08
Fig. 3 Typ. junction capacitance C
T
vs. reverse voltage V
R
Fig. 2 Typ. reverse current I
R
versus reverse voltage
Fig. 1 Max. forward voltage
drop characteristics
Fig. 4 Avg. forward current I
F(AV)
vs. case temperature T
C
Fig. 5 Forward power loss characteristics
Note: All curves are per diode
Fig. 6 Transient thermal impedance junction to case at various duty cycles
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