2000 IXYS All rights reserved
1 - 2
030
IXYS reserves the right to change limits, test conditions and dimensions.
V
RRM
= 600 V
I
D(AV)M
= 20 A
t
rr
= 80 ns
Fast Single Phase
Rectifier Bridge
in ISOPLUS i4-PAC
TM
1
5
Advanced Technical Information
FBE 22-06N1
Features
HiPerFREDTM Epitaxial Diodes
- fast and soft reverse recovery
low switching losses
- avalanche rated
- low leakage current
ISOPLUS i4-PACTM package
- isolated back surface
- enlarged creepage towards heatsink
- application friendly pinout
- high reliability
- industry standard outline
Applications
high frequency rectifiers, output
rectifiers of switched mode power
supplies
single phase mains rectifiers with
minimized electromagnetic emissions
power factor correction in conjunction
with boost chopper (FID.../FMD... type)
Input Rectifier Bridge
Symbol
Conditions
Maximum Ratings
V
RRM
600
V
I
FAV
T
C
= 90C; sine 180 (per diode)
10
A
I
D(AV)M
T
C
= 90C
20
A
I
FSM
T
VJ
= 25C; t = 10 ms; sine 50 Hz
40
A
E
AS
I
AS
= 0.9 A; L
AS
=180 H; T
C
= 25C; non repetitive
0.1
mJ
P
tot
T
C
= 25C
(per diode)
35
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
F
I
F
= 15 A; T
VJ
= 25C
2.0
2.2
V
T
VJ
= 125C
1.5
V
I
R
V
R
= V
RRM
;
T
VJ
= 25C
0.06
mA
T
VJ
= 125C
0.1
mA
I
RM
I
F
= 10 A; di
F
/dt = -400 A/s; T
VJ
= 125C
11
A
t
rr
V
R
= 300 V
80
ns
R
thJC
(per diode)
3.5 K/W
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
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