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Электронный компонент: FII24N17AH1

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2005 IXYS All rights reserved
FII24N17AH1
IXYS reserves the right to change limits, test conditions and dimensions.
Features
NPT
3
IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
SONIC-FRD
TM
diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Applications
Single phaseleg
- buck-boost chopper
H-bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
Three phase bridge
- AC drives
- controlled rectifier
I
C25
=
18 A
V
CES
= 1700 V
V
CE(sat)
=
6.0 V
High Voltage IGBT
Phase-Leg
ISOPLUS i4-PAC
TM
Package
IGBT
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25
C to 150C
1700
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
18
A
I
C90
T
C
= 90
C
11
A
I
CM
75
A
RBSOA
V
GE
=
+15 V; R
G
= 5
; T
VJ
= 125
C
50
A
Clamped inductive load; V
clamp
= 1360V
P
C
T
C
= 25
C
140
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 16 A; V
GE
= 15 V
4.5
6.0
V
T
VJ
= 125
C
4.8
V
V
GE(th)
I
C
= 250
A; V
GE
= V
CE
3.0
5.0
V
I
CES
V
CE
= 0.8 V
CES
;
V
GE
= 0 V
100
A
T
VJ
= 125
C
1.5 mA
I
GES
V
CE
= 0 V; V
GE
=
20 V
100 nA
t
d(on)
48
ns
t
r
60
ns
t
d(off)
200
ns
t
f
45
ns
E
off
1.1
mJ
t
d(on)
40
ns
t
r
60
ns
t
d(off)
220
ns
t
f
55
ns
E
on
2.5
mJ
E
off
1.7
mJ
Inductive load
V
CE
= 600 V; I
C
= 24 A
V
GE
= 15 V; R
G
= 39
DS99231A (08/05)
2
Inductive load, T
VJ
= 125
C
V
CE
= 600 V; I
C
= 24 A
V
GE
= 15 V; R
G
= 39
FII24N17AH1
3
5
4
1
1
5
Advance Technical Data
Note: All characteristic values and ratings refer to a single IGBT or diode
except V
CES
, I
CES
and C
oes
.
2005 IXYS All rights reserved
FII24N17AH1
IXYS reserves the right to change limits, test conditions and dimensions.
Component
Symbol
Conditions
Maximum Ratings
T
VJ
-55...+150
C
T
stg
-55...+125
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz
2500
V~
F
C
mounting force with clip
20...120
N
Symbol
Conditions
Characteristic Values
min.
typ.
max.
C
p
coupling capacity between shorted
40
pF
pins and mounting tab in the case
d
S
,d
A
pin - pin
1.7
mm
d
S
,d
A
pin - backside metal
5.5
mm
Weight
9
g
Diode
Symbol
Conditions
Maximum Ratings
I
F25
T
C
= 25
C
24
A
I
F90
T
C
= 90
C
14
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 20 A
2.5
3.1
V
T
VJ
= 125
C
2.5
V
I
RM
23
A
t
rr
230
ns
R
thJC
1.6
K/W
R
thCS
0.6
K/W
I
F
= 20 A; di
F
/dt = -450 A/s; T
VJ
= 125
C
V
R
= 1200 V; V
GE
= 0 V
Outline Drawing
IGBT
Symbol
Conditions
Characteristic Values
min.
typ.
max.
g
fs
I
C
= 24 A, V
CE
= 10 V, Note 2
10
16
S
Q
g
105
nC
Q
ge
I
C
= 16 A, V
GE
= 15 V, V
CE
= 0.5 V
CES
17
nC
Q
gc
30
nC
C
ies
2400
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
150
pF
C
res
30
pF
R
thJC
0.9 K/W
R
thCK
0.6
K/W
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463