1 - 2
2000 IXYS All rights reserved
TO-247AD
(IXGH)
G
C
E
G = Gate
C = Collector
E = Emitter
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
1200
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
W
1200
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
30
A
I
C90
T
C
= 90
C
15
A
I
CM
T
C
= 25
C, 1 ms
60
A
SSOA
V
GE
= 15 V, T
J
= 125
C, R
G
= 10
W
I
CM
= 40
A
(RBSOA)
Clamped inductive load
@0.8 V
CES
P
C
T
C
= 25
C
150
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature
260
C
soldering SMD devices for 10s
Weight
TO-247AD/TO-268
6/4
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 1 A, V
GE
= 0 V
1000
V
V
GE(th)
I
C
= 250
m
A, V
CE
= V
GE
2.5
5.0
V
I
CES
V
CE
= V
CES
T
J
= 25
C
500
m
A
V
GE
= 0 V
T
J
= 125
C
2
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90,
V
GE
= 15 V
15N120BD1
3.2
V
Note 2
15N120CD1
3.8
V
Features
International standard packages:
JEDEC TO-247AD & TO-268
IGBT and anti-parallel FRED in one
package
MOS Gate turn-on
- drive simplicity
Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Saves space (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
98658A (7/00)
TO-268
(IXGT)
G
C (TAB)
E
Low V
CE(sat)
IGBT with Diode
High Speed IGBT with Diode
IXGH/IXGT 15N120BD1
IXGH/IXGT 15N120CD1
TAB
V
DSS
I
C25
V
CE(sat)
1200 V
30 A
3.2 V
1200 V
30 A
3.8 V
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
12
15
S
Note 2.
C
ies
1700
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
155
pF
C
res
38
pF
Q
g
69
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
13
nC
Q
gc
26
nC
t
d(on)
25
ns
t
ri
15
ns
t
d(off)
150
280
ns
t
fi
15N120BD1
160
320
ns
15N120CD1
115
190
ns
15N120BD1
1.75
3.0
mJ
E
off
15N120CD1
1.05
1.6
mJ
t
d(on)
25
ns
t
ri
18
ns
E
on
1.5
mJ
t
d(off)
270
ns
t
fi
15N120BD1
360
ns
15N120CD1
250
mJ
15N120BD1
3.5
mJ
E
off
15N120CD1
2.1
mJ
R
thJC
0.83 K/W
R
thCK
TO-247
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= 20 A, V
GE
= 0 V
2.6
2.8
V
I
F
= 20 A, V
GE
= 0 V, T
J
= 125
C
2.1
V
I
F
T
C
= 25
C
33
V
T
C
= 90
C
20
V
I
RM
I
F
= 20 A; -di
F
/dt = 400 A/
m
s, V
R
= 600 V
15
A
t
rr
V
GE
= 0 V; T
J
= 125
C
200
ns
t
rr
I
F
= 1 A; -di
F
/dt = 100 A/
m
s; V
R
= 30 V,V
GE
= 0 V
40
ns
R
thJC
1.6 K/W
Inductive load, T
J
= 125
C
I
C
= I
C90
; V
GE
= 15 V
V
CE
= 0.8 V
CES
; R
G
= R
off
= 10
W
Note 1
Inductive load, T
J
= 25
C
I
C
= I
C90
; V
GE
= 15 V
V
CE
= 0.8 V
CES
; R
G
= R
off
= 10
W
Note 1.
Notes:
1.
Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
.
2.
Pulse test, t
300
m
s, duty cycle d
2 %
IXGH 15N120BD1
IXGT 15N120BD1
IXGH 15N120CD1
IXGT 15N120CD1
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
TO-268AA (D
3
PAK)
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3 0.25 BSC .010 BSC
L4
3.80
4.10
.150
.161
Min.
Recommended
Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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