www.docs.chipfind.ru
2006 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
IXTB IXTN
V
DSS
T
J
= 25C to 150C
1000
1000
V
V
DGR
T
J
= 25C to 150C; R
GS
= 1 M
1000
1000
V
V
GS
Continuous
30
30
V
V
GSM
Transient
40
40
V
I
D25
T
C
= 25C
30
30
A
I
DM
T
C
= 25C,
70
70
A
Pulse width limited by T
JM
I
AR
T
C
= 25C
30
30
A
E
AR
T
C
= 25C
80
80
mJ
E
AS
T
C
= 25C
2.0
2.0
J
P
D
T
C
= 25C
800
800
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.063 in) from case for 10 s
300
-
C
V
ISOL
50/60 Hz, RMS
t = 1 min
-
2500
V~
I
ISOL
< 1 mA
t = 1 s
-
3000
V~
M
d
Mounting torque
-
1.5/13 Nm/lb.in.
Terminal connection torque
-
1.5/13 Nm/lb.in.
F
C
Mounting force
28..150 /6.4..30
-
N/lb.
Weight
PLUS264 10 g
SOT-227B 30 g
Power MOSFETs with
Extended FBSOA
N-Channel Enhancement Mode
Avalanche Rated
Features
Designed for linear operation
International standard packages
Molding epoxies meet UL 94 V-0
flammability classification
SOT-227B miniBLOC with aluminium
nitride isolation
Applications
Programmable loads
Current regulators
DC-DC converters
Battery chargers
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C unless otherwise specified)
Min.
Typ. Max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
1000
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
3
5
V
I
GSS
V
GS
= 30 V
DC
, V
DS
= 0
200
nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0 V
T
J
= 25C
50
A
T
J
= 125C
1
mA
R
DS(on)
V
GS
= 20 V, I
D
= 0.5 I
D25
, Note 1
0.45
DS99501A(01/06)
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
V
DSS
= 1000 V
I
D25
=
30 A
R
DS(on)
0.45
IXYS reserves the right to change limits, test conditions, and dimensions.
G
D
miniBLOC, SOT-227 B (IXTN)
E153432
S
S
S
D
G
S
IXTB 30N100L
IXTN 30N100L
PLUS264 (IXTB)
D
S
G
(TAB)
IXTB 30N100L
IXTN 30N100L
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C unless otherwise specified)
Min.
Typ. Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
6
10
15
S
C
iss
11.4
nF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
800
pF
C
rss
150
pF
t
d(on)
36
ns
t
r
V
GS
= 15 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
70
ns
t
d(off)
R
G
= 2
(External)
100
ns
t
f
78
ns
Q
g(on)
530
nC
Q
gs
V
GS
= 15 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
125
nC
Q
gd
150
nC
R
thJC
0.156 K/W
R
thCK
PLUS264
0.15
K/W
R
thCK
SOT-227B
0.05
K/W
PLUS264 Outline
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
31.50
31.88
1.240
1.255
B
7.80
8.20
0.307
0.323
C
4.09
4.29
0.161
0.169
D
4.09
4.29
0.161
0.169
E
4.09
4.29
0.161
0.169
F
14.91
15.11
0.587
0.595
G
30.12
30.30
1.186
1.193
H
38.00
38.23
1.496
1.505
J
11.68
12.22
0.460
0.481
K
8.92
9.60
0.351
0.378
L
0.76
0.84
0.030
0.033
M
12.60
12.85
0.496
0.506
N
25.15
25.42
0.990
1.001
O
1.98
2.13
0.078
0.084
P
4.95
5.97
0.195
0.235
Q
26.54
26.90
1.045
1.059
R
3.94
4.42
0.155
0.174
S
4.72
4.85
0.186
0.191
T
24.59
25.07
0.968
0.987
U
-0.05
0.1
-0.002
0.004
Safe Operating Area Specification
Symbol
Test Conditions
Min.
Typ. Max.
SOA
V
DS
= 600 V, I
D
= 0.5A, T
C
= 90C
300
W
Note 1: Pulse test, t < 300
s, duty cycle d < 2 %
Source-Drain Diode
Characteristic Values
(T
J
= 25C unless otherwise specified)
Symbol
Test Conditions
Min.
Typ. Max.
I
S
V
GS
= 0 V
30
A
I
SM
Repetitive; pulse width limited by T
JM
50
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t < 300 ms, duty cycle d < 2 %
t
rr
I
F
= I
S
, -di/dt = 100 A/
s, V
R
= 100 V
1000
ns
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or more of the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478 B2
2006 IXYS All rights reserved
IXTB 30N100L
IXTN 30N100L
Fig. 1. Output Characteristics
@ 25C
0
3
6
9
12
15
18
21
24
27
30
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Volts
I
D
-
A
m
per
es
V
GS
= 20V
16V
14V
12V
9V
8V
10V
7V
6V
Fig. 2. Extended Output Characteristics
@ 25C
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
V
DS
- Volts
I
D
- A
m
p
e
re
s
VGS =
20V
16V
12V
9V
10V
8V
7V
Fig. 3. Output Characteristics
@ 125C
0
3
6
9
12
15
18
21
24
27
30
0
3
6
9
12
15
18
21
24
V
DS
- Volts
I
D
-
A
m
per
es
V
GS
= 20V
14V
12V
10V
7V
9V
8V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 32A Value
vs. Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
DS(
o
n
)
-
N
o
r
m
a
liz
e
d
V
GS
= 20V
I
D
= 30A
I
D
= 15A
Fig. 5. R
DS(on)
Normalized to 0.5 I
D25
Value
vs. Drain Current
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0
10
20
30
40
50
60
70
I
D
- Amperes
R
DS
(
o
n
)
- N
o
rma
l
i
z
e
d
V
GS
= 20V
T
J
= 125C
T
J
= 25C
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
3
6
9
12
15
18
21
24
27
30
33
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
I
D
-
A
m
per
es
IXTB 30N100L
IXTN 30N100L
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
40
45
4
5
6
7
8
9
10
11
V
GS
- Volts
I
D
-
A
m
p
e
re
s
T
J
= 125C
25C
- 40C
Fig. 8. Transconductance
0
2
4
6
8
10
12
14
16
18
20
22
0
5
10
15
20
25
30
35
40
45
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= - 40C
25C
125C
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
100
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V
SD
- Volts
I
S
-
A
m
per
es
T
J
= 125C
T
J
= 25C
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
18
20
0
100
200
300
400
500
600
Q
G
- NanoCoulombs
V
GS
-
V
o
l
t
s
V
DS
= 500V
I
D
= 15A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
C
apa
ci
t
a
nce -
P
i
coF
a
r
a
d
s
f
= 1 MHz
Ciss
Crss
Coss
2006 IXYS All rights reserved
IXTB 30N100L
IXTN 30N100L
Fig. 12. Forward-Bias Safe Operating Area
@ T
C
= 25C
0
1
10
100
10
100
1000
10000
V
DS
- Volts
I
D
-
A
m
p
e
r
e
s
T
J
= 150C
25s
1ms
100s
10ms
DC
Fig. 14. Maximum Transient Thermal Resistance
0.001
0.010
0.100
1.000
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
R
(t
h)
J
C
-
C
/
W
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 90C
0
1
10
100
10
100
1000
10000
V
DS
- Volts
I
D
- A
m
p
e
re
s
T
J
= 150C
25s
1ms
100s
10ms
DC
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