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2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 175
C
55
V
V
DGR
T
J
= 25
C to 175
C; R
GS
= 1 M
55
V
V
GS
Continuous
20
V
V
GSM
Tranisent
30
V
I
D25
T
C
= 25
C
110
A
I
DRMS
External lead current limit
75
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
250
A
I
AR
T
C
= 25
C
110
A
E
AR
T
C
= 25
C
30
mJ
E
AS
T
C
= 25
C
1.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
10
V/ns
T
J
150
C, R
G
= 10
P
D
T
C
= 25
C
330
W
T
J
-55 ... +175
C
T
JM
175
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
Maximum tab temperature for soldering
260
C
TO-263 package for 10s
M
d
Mounting torque
(TO-3P / TO-220)
1.13/10 Nm/lb.in.
Weight
TO-3P
5.5
g
TO-220
4
g
TO-263
3
g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99182A(05/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
55
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2.5
5.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 125
C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
11
13.5
m
Pulse test, t
300
s, duty cycle d
2 %
PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
TO-3P (IXTQ)
TO-263 (IXTA)
TO-220 (IXTP)
G
D
S
(TAB)
D
(TAB)
G
S
G
S
(TAB)
IXTQ 110N055P
IXTA 110N055P
IXTP 110N055P
V
DSS
= 55 V
I
D25
= 110 A
R
DS(on)
= 13.5 m
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 110N055P IXTP 110N055P
IXTQ 110N055P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
23
36
S
C
iss
2210
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1400
pF
C
rss
550
pF
t
d(on)
27
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
53
ns
t
d(off)
R
G
= 10
(External)
66
ns
t
f
45
ns
Q
g(on)
76
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
17
nC
Q
gd
33
nC
R
thJC
0.38 K/W
R
thCK
(TO-3P)
0.21
K/W
(TO-220)
0.25
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
110
A
I
SM
Repetitive
250
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
I
F
= 25 A
120
ns
-di/dt = 100 A/
s
Q
RM
V
R
= 25 V
1.4
C
TO-3P (IXTQ) Outline
Pins: 1 - Gate
2 - Drain
TO-220 (IXTP) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-263 (IXTA) Outline
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
2005 IXYS All rights reserved
IXTA 110N055P IXTP 110N055P
IXTQ 110N055P
Fig. 2. Extended Output Characteristics
@ 25
C
0
20
40
60
80
100
120
140
160
180
200
220
0
1
2
3
4
5
6
7
8
9
10
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
7V
6V
8V
9V
5V
Fig. 3. Output Characteristics
@ 150
C
0
10
20
30
40
50
60
70
80
90
100
110
0
0.4
0.8
1.2
1.6
2
2.4
2.8
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 1. Output Characteristics
@ 25
C
0
10
20
30
40
50
60
70
80
90
100
110
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
9V
7V
5V
6V
8V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50
-25
0
25
50
75
100
125
150
175
T
J
- Degrees Centigrade
R
D
S
(
o n )
-
N
o
rm
a
l
i
z
e
d
I
D
= 110A
I
D
= 55A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
20
40
60
80
100
120
-50
-25
0
25
50
75
100
125
150
175
T
C
- Degrees Centigrade
I
D
-
A
m
p
e
re
s
Fig. 5. R
DS(on)
Norm alized to 0.5 I
D25
Value vs. Drain Current
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0
25
50
75
100 125 150 175 200 225 250
I
D
- Amperes
R
D
S
(
o
n )
-
N
o
r
m
a
liz
e
d
T
J
= 25
C
V
GS
= 10V
T
J
= 175
C
V
GS
= 15V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 110N055P IXTP 110N055P
IXTQ 110N055P
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
C
apac
it
a
n
c
e
-
pic
o
F
a
r
a
d
s
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
70
80
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 22.5V
I
D
= 55A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
25
50
75
100
125
150
175
200
225
250
2
3
4
5
6
7
8
9
10
11
V
G S
- Volts
I
D
-
A
m
per
es
T
J
= -40
C
25
C
150
C
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
45
50
0
50
100
150
200
250
300
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40
C
25
C
150
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 150
C
T
J
= 25
C
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
1
10
100
V
D S
- Volts
I
D
-
A
m
per
es
100s
1ms
DC
T
J
= 175
C
T
C
= 25
C
R
DS(on)
Limit
10ms
25s
2005 IXYS All rights reserved
IXTA 110N055P IXTP 110N055P
IXTQ 110N055P
Fig. 13. Maximum Transient Thermal Resistance
0.01
0.10
1.00
0.1
1
10
100
1000
Pulse Width - milliseconds
R
( t h ) J C
-
C
/ W
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