2005IXYS All rights reserved
G = Gate
D = Drain
S = Source
TAB = Drain
DS99324A(04/05)
PolarHV
TM
Power MOSFET
IXTQ 18N60P
V
DSS
= 600 V
IXTV 18N60P
I
D25
= 18 A
IXTV 18N60PS
R
DS(on)
400 m
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
TO-3P (IXTQ)
G
D
S
(TAB)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
3.0
5.0
V
I
GSS
V
GS
=
30 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 125
C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
400 m
Pulse test, t
300
s, duty cycle d
2 %
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
600
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
600
V
V
GS
Continuous
20
V
V
GSM
Tranisent
30
V
I
D25
T
C
= 25
C
18
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
54
A
I
AR
T
C
= 25
C
18
A
E
AR
T
C
= 25
C
30
mJ
E
AS
T
C
= 25
C
1.2
J
dv/dt
I
S
I
DM
, di/dt
100 A/
s, V
DD
V
DSS
,
10
V/ns
T
J
150
C, R
G
= 4
P
D
T
C
= 25
C
360
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
Plastic body for 10 s
250
C
M
d
Mounting torque
(TO-3P)
1.13/10 Nm/lb.in.
Weight
TO-3P
6
g
PLUS220 & PLUS220SMD
4
g
G
S
D
PLUS220 (IXFV)
G
S
PLUS220SMD (IXFV-PS)
D (TAB)
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 18N60P
IXTV18N60P IXTV 18N60PS
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ. Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
13
18
S
C
iss
3000
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
250
pF
C
rss
32
pF
t
d(on)
21
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
22
ns
t
d(off)
R
G
= 5
(External)
62
ns
t
f
22
ns
Q
g(on)
85
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
21
nC
Q
gd
46
nC
R
thJC
0.35
K/W
R
thCK
(TO-3P, PLUS220)
0.21
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
18
A
I
SM
Repetitive
54
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
I
F
= 18A
-di/dt = 100 A/
s
V
R
= 100V
Q
RM
410
4.0
ns
C
TO-3P (IXTQ) Outline
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
L
L3
L2
L1
A1
E1
e
D1
E
b
D
c
A2
A
A3
L4
Terminals: 1-Gate 2-Drain
E
E1
D
L2
A
A1
L1
L
L3
e
2X b
c
A2
L4
A3
E1
PLUS220SMD (IXFV-PS) Outline
D1
L
L3
L1
E1
e
E
b
D
c
A2
A1
A
L2
E1
E
L2
D
L3
L
L1
3X b
2X e
c
A2
A1
A
E1
D1
PLUS220 (IXFV) Outline
Terminals: 1-Gate 2-Drain
2005IXYS All rights reserved
Fig. 1. Output Characteristics
@ 25
C
0
2
4
6
8
10
12
14
16
18
0
1
2
3
4
5
6
7
8
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
8V
7V
5V
6V
Fig. 2. Output Characteristics
@ 125
C
0
5
10
15
20
25
30
35
40
0
3
6
9
12
15
18
21
24
27
30
V
D S
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
8V
7V
6V
5V
Fig. 4. R
DS(on
)
Normalized to 0.5 I
D25
Value vs. Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o n )
- N
o
rm
a
l
i
z
e
d
I
D
= 18A
I
D
= 9A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
2
4
6
8
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
- A
m
p
e
re
s
Fig. 5. R
DS(on)
Normalized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
0
5
10
15
20
25
30
35
40
45
I
D
- Amperes
R
D
S
(
o n )
-
N
o
r
m
ali
z
ed
T
J
= 125
C
T
J
= 25
C
V
GS
= 10V
Fig. 3. Output Characteristics
@ 125
C
0
2
4
6
8
10
12
14
16
18
0
2
4
6
8
10
12
14
16
18
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
7V
6V
5V
IXTQ 18N60P
IXTV18N60P IXTV 18N60PS
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 11. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
apa
c
i
t
a
n
c
e -
pi
c
o
F
a
r
ads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
40
45
50
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 300V
I
D
= 9A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
3
6
9
12
15
18
21
24
27
30
3.5
4
4.5
5
5.5
6
6.5
V
G S
- Volts
I
D
-
A
m
per
es
T
J
= 125
C
25
C
-40
C
Fig. 8. Transconductance
0
3
6
9
12
15
18
21
24
27
0
3
6
9
12
15
18
21
24
27
30
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40
C
25
C
125
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
10
20
30
40
50
60
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 125
C
T
J
= 25
C
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
10
100
1000
V
D S
- Volts
I
D
- A
m
p
e
re
s
100s
1ms
DC
T
J
= 150C
T
C
= 25C
R
DS(on)
Limit
10ms
25s
IXTQ 18N60P
IXTV18N60P IXTV 18N60PS
2005IXYS All rights reserved
Fig. 13. Maximum Transient Thermal Resistance
0.01
0.10
1.00
0.1
1
10
100
1000
Pulse Width - milliseconds
R
( t h ) J C
-
C / W
IXTQ 18N60P
IXTV18N60P IXTV 18N60PS
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