2005 IXYS All rights reserved
G
D
S
G = Gate
D = Drain
S = Source
TAB = Drain
DS99376(08/05)
PolarHV
TM
Power MOSFET
V
DSS
= 600
V
I
D25
= 26
A
R
DS(on)
270 m
Advance Technical Information
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
TO-3P (IXTQ)
G
D
S
D (TAB)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
5.0
V
I
GSS
V
GS
=
30 V, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 125
C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
270
m
Pulse test, t
300 s, duty cycle d 2 %
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
600
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 1 M
600
V
V
GSS
Continuous
30
V
V
GSM
Transient
40
V
I
D25
T
C
= 25
C
26
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
65
A
I
AR
T
C
= 25
C
26
A
E
AR
T
C
= 25
C
40
mJ
E
AS
T
C
= 25
C
1.2
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
10
V/ns
T
J
150C, R
G
= 5
P
D
T
C
= 25
C
460
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
Plastic body
250
C
M
d
Mounting torque (TO-3P&TO-247)
1.13/10 Nm/lb.in.
F
C
Mounting force (PLUS220)
11..65/2.5..15
N/lb
Weight
TO-3P
5.5
g
TO-248
6.0
g
TO-268
5.0
g
PLUS220 & PLUS220SMD
4.0
g
IXTH 26N60P
IXTQ 26N60P
IXTT 26N60P
IXTV 26N60P
IXTV 26N60PS
TO-268 (IXTT)
G
S
D (TAB)
TO-247 (IXTH)
Advance Technical Information
G
S
D (TAB)
PLUS220SMD (IXTV_S)
G
S
D
PLUS220 (IXTV)
D (TAB)
Features
Fast Recovery diode
Unclamped Inductive Switching (UIS)
rated
International standard packages
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 26N60P IXTQ 26N60P
IXTV 26N60P IXTV 26N60PS IXTT 26N60P
Fig. 2. Extended Output Characteristics
@ 25
C
0
6
12
18
24
30
36
42
48
54
60
0
3
6
9
12
15
18
21
24
27
30
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25
C
0
4
8
12
16
20
24
0
1
2
3
4
5
6
7
V
D S
- Volts
I
D
- A
m
p
e
r
e
s
V
GS =
10V
7V
5V
6V
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ. Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
16
26
S
C
iss
4150
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
400
pF
C
rss
27
pF
t
d(on)
25
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 I
D25
27
ns
t
d(off)
R
G
= 5
(External)
75
ns
t
f
21
ns
Q
g(on)
72
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
27
nC
Q
gd
24
nC
R
thJC
0.27 K/W
R
thCK
TO-3P, PLUS220 & TO-247 0.21 K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
Typ. Max.
I
S
V
GS
= 0 V
26
A
I
SM
Repetitive
78
A
V
SD
I
F
= I
S
, V
GS
= 0 V, pulse test
1.5
V
t
rr
I
F
= 26A, -di/dt = 100 A/
s
400
ns
Q
RM
V
R
= 100V; V
GS
= 0 V
7
C
Characteristic Curves
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
2005 IXYS All rights reserved
Fig. 3. Output Characteristics
@ 125
C
0
4
8
12
16
20
24
0
2
4
6
8
10
12
14
16
V
D S
- Volts
I
D
- A
m
p
e
r
e
s
V
GS
= 10V
7V
6V
5V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o
n )
- N
o
rm
a
l
i
z
e
d
I
D
= 26A
I
D
= 13A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
3
6
9
12
15
18
21
24
27
30
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.8
1.2
1.6
2
2.4
2.8
3.2
0
10
20
30
40
50
60
I
D
- Amperes
R
D S
(
o
n
)
-
N
o
r
m
a
liz
e
d
T
J
= 125
C
T
J
= 25
C
V
GS
= 10V
Fig. 7. Input Adm ittance
0
5
10
15
20
25
30
35
40
45
50
4
4.5
5
5.5
6
6.5
7
7.5
V
G S
- Volts
I
D
-
A
m
per
es
T
J
= 125
C
25
C
-40
C
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
40
45
50
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40
C
25
C
125
C
IXTH 26N60P IXTQ 26N60P
IXTV 26N60P IXTV 26N60PS IXTT 26N60P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 26N60P IXTQ 26N60P
IXTV 26N60P IXTV 26N60PS IXTT 26N60P
Fig. 11. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
a
pac
i
t
an
c
e
-
pi
c
o
F
a
r
a
ds
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
70
80
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 300V
I
D
= 13A
I
G
= 10mA
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
10
20
30
40
50
60
70
80
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V
S D
- Volts
I
S
-
A
m
p
e
re
s
T
J
= 125
C
T
J
= 25
C
Fig. 12. Maximum Transient Thermal Resistance
0.01
0.10
1.00
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
R
( t h ) J
C
-
C /
W
2005 IXYS All rights reserved
TO-268 (IXTT) Outline
TO-3P (IXTQ) Outline
D1
L
L3
L1
E1
e
E
b
D
c
A2
A1
A
L2
Terminals: 1 - Gate
2 - Drain
3 - Source
TAB - Drain
E1
E
L2
D
L3
L
L1
3X b
2X e
c
A2
A1
A
E1
D1
PLUS220 (IXTV) Outline
L
L3
L2
L1
A1
E1
e
D1
E
b
D
c
A2
A
A3
L4
Terminals:
1 - Gate
2 - Drain
3 - Source
4 (TAB) - Drain
E
E1
D
L2
A
A1
L1
L
L3
e
2X b
c
A2
L4
A3
E1
PLUS220SMD (IXTV_S)
TO-247 AD (IXTH) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
1 2 3
IXTH 26N60P IXTQ 26N60P
IXTV 26N60P IXTV 26N60PS IXTT 26N60P
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