2000 IXYS All rights reserved
1 - 3
Phase Control Thyristors
V
RRM
= 800-1200 V
I
T(RMS)
= 25 A
I
T(AV)M
= 16 A
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
900
800
CS 8-08io2
1300
1200
CS 8-12io2
Symbol
Test Conditions
Maximum Ratings
I
T(RMS)
T
VJ
= T
VJM
25
A
I
T(AV)M
T
case
= 85
C; 180
sine
16
A
I
TSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
250
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
270
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
200
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
220
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
310
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
306
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
200
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
200
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 48 A
150
A/
m
s
f = 50
Hz, t
P
=200
m
s
V
D
= 2/3 V
DRM
I
G
= 0.2 A
non repetitive, I
T
= I
T(AV)M
500
A/
m
s
di
G
/dt = 0.2 A/
m
s
(dv/dt)
cr
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
1000
V/
m
s
R
GK
=
; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
t
P
=
30
m
s
10
W
I
T
= I
T(AV)M
t
P
= 300
m
s
5
W
P
G(AV)
0.5
W
V
RGM
10
V
T
VJ
-40...+125
C
T
VJM
125
C
T
stg
-40...+125
C
M
d
Mounting torque
2.5
Nm
22
lb.in.
Weight
6
g
Features
q
Thyristor for line frequencies
q
International standard package
JEDEC TO-64
q
Planar glassivated chip
q
Long-term stability of blocking
currents and voltages
Applications
q
Motor control
q
Power converter
q
AC power controller
Advantages
q
Space and weight savings
q
Simple mounting
q
Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
CS 8
1
2
3
1 = Anode, 2 = Cathode, 3 = Gate
TO-64
2
3
M5
1
2000 IXYS All rights reserved
2 - 3
CS 8
0.0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
10
-2
10
-1
10
0
10
1
10
-1
10
0
10
1
10
2
0
25
50
75
0
1
2
3
4
I
T
t
gd
V
G
V
I
G
t
V
T
A
m
s
mA
A
V
Symbol
Test Conditions
Characteristic Values
I
R
, I
D
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
3
mA
V
T
I
T
= 33 A; T
VJ
= 25
C
1.6
V
V
T0
For power-loss calculations only (T
VJ
= 125
C)
1.0
V
r
T
18
m
W
V
GT
V
D
= 6 V;
T
VJ
= 25
C
2.5
V
T
VJ
= -40
C
3.5
V
I
GT
V
D
= 6 V;
T
VJ
= 25
C
30
mA
T
VJ
= -40
C
50
mA
V
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
0.2
V
I
GD
1
mA
I
L
T
VJ
= 25
C; t
P
= 10
m
s
100
mA
I
G
= 0.09 A; di
G
/dt = 0.09 A/
m
s
I
H
T
VJ
= 25
C; V
D
= 6 V; R
GK
=
80
mA
t
gd
T
VJ
= 25
C; V
D
= 1/2 V
DRM
2
m
s
I
G
= 0.09 A; di
G
/dt = 0.09 A/
m
s
t
q
T
VJ
= T
VJM
; I
T
= 16 A, t
P
= 300
m
s; di/dt = -20 A/
m
s
typ.
60
m
s
V
R
= 100 V; dv/dt = 20 V/
m
s; V
D
= 2/3 V
DRM
R
thJC
DC current
1.5
K/W
R
thJH
DC current
2.5
K/W
d
S
Creepage distance on surface
1.55
mm
d
A
Strike distance through air
1.55
mm
a
Max. acceleration, 50 Hz
50
m/s
2
Accessories:
Nut M5 DIN 439/SW8
Lock washer A5 DIN 128
Fig. 1 Gate voltage and gate current
Triggering:
A = no; B = possible; C = safe
Fig. 2 Gate controlled delay time t
gd
Fig. 3 On-state characteristics
B
B
C
B
lim.
typ.
typ. lim.
T
VJ
= 125C
T
VJ
= 25C
I
GD
: T
VJ
= 25C
I
GD
: T
VJ
=125C
A
I
GT
: T
VJ
= 25C
I
GT
: T
VJ
= 0C
I
GT
: T
VJ
= -40C
2000 IXYS All rights reserved
3 - 3
0
50
100
150
0
5
10
15
20
2
3
4
5 6 7 8 9
1
10
200
400
600
800
100
1000
10
-3
10
-2
10
-1
10
0
10
1
0
50
100
150
200
250
300
0
5
10
15
20
25
30
0
10
20
30
40
50
100
150
0
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
T(AV)M
I
2
t
I
TSM
A
t
t
T
c
P
T
W
I
T(AV)M
A
T
amb
t
s
Z
thJH
K/W
A
A
2
s
s
C
ms
C
CS 8
Fig. 7 Power dissipation versus on-state current and ambient temperature
Fig. 4 Surge overload current
I
TSM
: crest value, t: duration
Fig. 5 I
2
t versus time (1-10 ms)
Fig. 6 Maximum forward current at
case temperature 180
sine
Fig. 8 Transient thermal impedance junction to heatsink
R
thJH
for various conduction angles d:
d
R
thJH
(K/W)
DC
2.5
180
2.79
120
2.95
60
3.17
30
3.32
Constants for Z
thJH
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.252
0.005
2
0.333
0.0225
3
0.5
0.145
4
0.833
0.43
5
0.416
2.75
6
0.166
23
50Hz, 80%V
RRM
T
VJ
= 45C
T
VJ
= 125C
V
R
= 0 V
DC
180 sin
120
60
30
d = DC
d = 180
d = 120
d = 60
d = 30
T
VJ
= 45C
T
VJ
= 125C
R
thJA
:
2.8 K/W
3.2 K/W
3.6 K/W
3.6 K/W
5.2 K/W
7 K/W
ase
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