2004 IXYS All rights reserved
1 - 2
DSEP 9-06CR
I
FAV
= 9 A
V
RRM
= 600 V
t
rr
= 15 ns
V
RSM
V
RRM
Type
V
V
600
600
DSEP 9-06CR
Symbol
Conditions
Maximum Ratings
I
FRMS
50
A
I
FAVM
T
C
= 140C; rectangular, d = 0.5
9
A
I
FRM
t
P
< 10 s; rep. rating, pulse width limited by T
VJM
tbd
A
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
80
A
E
AS
T
VJ
= 25C; non-repetitive
0.5
mJ
I
AS
= 2 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.2
A
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
P
tot
T
C
= 25C
150
W
V
ISOL
50/60 Hz RMS; I
ISOL
1 mA
2500
V~
F
C
mounting force with clip
20...120
N
Weight
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25C
V
R
= V
RRM
50
A
T
VJ
= 150C V
R
= V
RRM
0.2
mA
V
F
I
F
= 9 A;
T
VJ
= 150C
2.9
V
T
VJ
= 25C
4.0
V
R
thJC
1
K/W
R
thCH
0.25
K/W
t
rr
I
F
= 1 A; -di/dt = 200 A/s;
15
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 10 A; -di
F
/dt = 100 A/s
3.5
4.1
A
T
VJ
= 100C
HiPerDynFRED
TM
Epitaxial Diode
with soft recovery
(Electrically Isolated Back Surface)
A = Anode, C = Cathode
* Patent pending
ISOPLUS 247
TM
A
C
Isolated back surface *
C
A
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<
25
pF)
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Isolated and UL registered E153432
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
2004 IXYS All rights reserved
2 - 2
DSEP 9-06CR
406
200
600
1000
0
400
800
30
35
40
45
0.0001
0.001
0.01
0.1
1
10
0.01
0.1
1
10
0
40
80
120
160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
20
40
60
80
0.0
0.4
0.8
1.2
1.6
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
5
10
15
20
100
1000
0.0
0.1
0.2
0.3
0.4
0
1
2
3
4
5
0
5
10
15
20
25
30
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
C
A/
s
A/
s
t
rr
ns
t
fr
Z
thJC
A/
s
s
DSEP 9-06CR
T
VJ
= 150C
T
VJ
= 100C
T
VJ
= 25C
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
T
VJ
= 100C
I
F
= 10 A
T
VJ
= 100C
V
R
= 300 V
T
VJ
= 100C
V
R
= 300 V
T
VJ
= 100C
V
R
= 300 V
I
RM
Q
R
V
FR
t
rr
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
Fig. 2 Typ. reverse recovery charge
Q
r
versus -di
F
/dt
Fig. 1 Max. forward current
I
F
versus V
F
Fig. 4 Typ. dynamic parameters
Q
r
, I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal resistance junction to case
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