LARONTROL
Electronic Devices
Distributed by
USA
3540 Bassett Street
Santa Clara, CA 95054
Phone: (408) 982-0700
FAX: (408) 496-0670
EUROPE
IXYS Semiconductor GmbH
Lampertheim Germany
Phone: +49.6206.503.0
Fax: +49.6206.503.627
www.IXYS.
com
Type
Number
Repetitive
Peak
Minimum
Avalanche
Voltage
V
(BR)R
CIRCUIT DIAGRAM
IXYS reserves the right to change limits, test conditions and dimensions.
HTZ110A Series
High Voltage
I
F(AV)
= 3.5 A
Diode Rectifier
V
RRM
= 25000 V
Module
C e ntre Ta p
-
V
RR M
-
_
+
CURRENT RATINGS - AIR COOLED
I
F(AV)
Mean forward current
Half wave resistive load T
amb
= 35C
3.5
A
I
F
Continuous (direct) forward current
T
amb
= 35C
4.3
A
R
th(j-a)
Thermal resistance junction to ambient
2.3 C/W
CURRENT RATINGS - OIL COOLED
I
F(AV)
Mean forward current
Half wave resistive load T
oil
= 60C
5.7
A
I
T
Continuous (direct) forward current
T
oil
= 60C
7.0
A
R
th(j-o)
Thermal resistance junction to oil
0.93 C/W
SURGE RATINGS
I
2
t
I
2
t for fusing
10 ms half sine T
vj
= 150C
200 A
2
sec
I
FSM
Surge (non-repetitive) forward current
T
vj
= 150C
200
A
TEMPERATURE AND FREQUENCY RATINGS
T
vj
Virtual junction temperature
Forward (conducting)
180
C
Reverse (blocking)
180
C
T
stg
Storage temperature range
-40 to 100
C
f
Frequency range
20 to 400
Hz
CHARACTERISTICS T
case
= 25C unless otherwise stated
V
FM
Forward voltage
At 12 Amps peak
max 18.3
V
I
RM
Peak reverse current
At V
RRM
; T
case
= 150C
max 0.5
mA
HTZ110A25K
25000
27200
HTZ110A22K
22000
24000
HTZ110A19K
19000
20800
HTZ110A16K
16000
17600
Dimensioned Outlines
Dimensions shown are maximum in mm
Weight typ.: 1,55 Kg
Issue 1 June 1998
368
48
48
348
150
150
300
6.8 DIA
TAPPED M6, 3 OFF
BOTH ENDS
ZA
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