� 2002 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VUE 130-06NO7
241
B3
Three Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
in ECO-PAC 2
I
dAV
= 130 A
V
RRM
= 600 V
t
rr
= 35 ns
V
RSM
V
RRM
Typ
V
V
600
600
VUE 130-06NO7
Symbol
Conditions
Maximum Ratings
I
dAV
T
C
= 85�C, module
130
A
I
dAVM
130
A
I
FSM
T
VJ
= 45�C
t = 10 ms (50 Hz), sine
600
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
640
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
520
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
555
A
I
2
t
T
VJ
= 45�C
t = 10 ms (50 Hz), sine
1800
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
1720
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
1350
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
1295
A
2
s
T
VJ
-40...+150
�C
T
VJM
150
�C
T
stg
-40...+125
�C
V
ISOL
50/60 Hz, RMS
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque (M4)
1.5-2/14-18
Nm/lb.in.
Weight
typ.
24
g
Features
� Package with DCB ceramic
base plate in low profile
� Isolation voltage 3000 V~
� Planar passivated chips
� Low forward voltage drop
� Leads suitable for PC board soldering
Applications
� Supplies for DC power equipment
� Input and output rectifiers for high
frequency
� Battery DC power supplies
� Field supply for DC motors
Advantages
� Space and weight savings
� Improved temperature and power
cycling capability
� Small and light weight
� Low noise switching
Data according to IEC 60747 refer to a single diode unless otherwise stated
for resistive load at bridge output.
Dimensions in mm (1 mm = 0.0394")
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
V
R
= V
RRM
T
VJ
= 25�C
0.1
mA
V
R
= V
RRM
T
VJ
= T
VJM
2.5
mA
V
F
I
F
= 60 A
T
VJ
= 25�C
2.04
V
V
T0
for power-loss calculations only
1.09
V
r
T
4.3 m
R
thJC
per diode; DC current
0.8 K/W
R
thCH
per diode, DC current, typ.
0.2 K/W
I
RM
I
F
= 130 A, -diF/dt = 100 A/�s
6.8
A
V
R
= 100 V, T
VJ
= 100�C
t
rr
I
F
= 1 A; -di/dt = 300 A/�s; V
R
= 30 V, T
VJ
= 25�C
35
ns
a
Max. allowable acceleration
50
m/s
2
d
S
creeping distance on surface (pin to heatsisnk)
11.2
mm
d
A
strike distance in air (pin to heatsisnk)
9.7
mm
Preliminary data sheet
PS16
EG 1
~
A 1
~
L 9
~
K10
Pin arangement see outlines
� 2002 IXYS All rights reserved
2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VUE 130-06NO7
241
B3
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
200
600
1000
0
400
800
80
90
100
110
120
130
140
0.00001
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
5
10
15
20
0.0
0.4
0.8
1.2
1.6
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
20
40
60
80
100
1000
0
1000
2000
3000
4000
0
1
2
0
20
40
60
80
100
120
140
160
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
�
s
A
V
nC
A/
�
s
A/
�
s
t
rr
ns
t
fr
A/
�
s
�
s
Z
thJC
DWLP55-06
DWLP55-06
DWLP55-06
DWLP55-06
DWLP55-06
DWLP55-06
T
VJ
= 25�C
T
VJ
= 100�C
T
VJ
= 150�C
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
T
VJ
= 100�C
V
R
= 300 V
T
VJ
= 100�C
V
R
= 300 V
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
T
VJ
= 100�C
V
R
= 300 V
I
RM
Q
r
T
VJ
= 100�C
I
F
= 60 A
V
FR
t
rr
VUE 130-06
Fig. 7 Typical transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
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