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Электронный компонент: L566

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2002 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VUE 130-12NO7
241
B3
Three Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
in ECO-PAC 2
I
dAV
= 130 A
V
RRM
= 1200 V
t
rr
= 40 ns
V
RSM
V
RRM
Typ
V
V
1200
1200
VUE 130-12NO7
Symbol
Conditions
Maximum Ratings
I
dAV
T
C
= 70C, module
130
A
I
dAVM
90
A
I
FSM
T
VJ
= 45C
t = 10 ms (50 Hz), sine
500
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
525
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
415
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
440
A
I
2
t
T
VJ
= 45C
t = 10 ms (50 Hz), sine
1250
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
1160
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
860
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
820
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque (M4)
1.5-2/14-18
Nm/lb.in.
Weight
typ.
24
g
Features
Package with DCB ceramic
base plate in low profile
Isolation voltage 3000 V~
Planar passivated chips
Low forward voltage drop
Leads suitable for PC board soldering
Applications
Supplies for DC power equipment
Input and output rectifiers for high
frequency
Battery DC power supplies
Field supply for DC motors
Advantages
Space and weight savings
Improved temperature and power
cycling capability
Small and light weight
Low noise switching
Data according to IEC 60747 refer to a single diode unless otherwise stated
for resistive load at bridge output.
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
V
R
= V
RRM
T
VJ
= 25C
1
mA
V
R
= V
RRM
T
VJ
= T
VJM
2.5
mA
V
F
I
F
= 60 A
T
VJ
= 25C
2.7
V
V
T0
for power-loss calculations only
1.07
V
r
T
8.2 m
R
thJC
per diode; DC current
0.8 K/W
R
thCH
per diode, DC current, typ.
0.2 K/W
I
RM
I
F
= 130 A, -diF/dt = 100 A/s
7
15
A
V
R
= 100 V, T
VJ
= 100C
t
rr
I
F
= 1 A; -di/dt = 300 A/s; V
R
= 30 V, T
VJ
= 25C
40
ns
a
Max. allowable acceleration
50
m/s
2
d
S
creeping distance on surface (pin to heatsink)
11.2
mm
d
A
strike distance in air (pin to heatsink)
9.7
mm
Dimensions in mm (1 mm = 0.0394")
Preliminary data sheet
PS16
EG 1
~
A 1
~
L 9
~
K10
Pin arangement see outlines
2002 IXYS All rights reserved
2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VUE 130-12NO7
241
B3
200
600
1000
0
400
800
160
200
240
280
0,0001
0,001
0,01
0,1
1
10
0,01
0,1
1
0
40
80
120
160
0,0
0,5
1,0
1,5
2,0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
40
80
120
0,0
0,4
0,8
1,2
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
20
40
60
80
100
100
1000
0
2
4
6
8
10
0
1
2
3
0
20
40
60
80
100
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
C
A/
s
A/
s
t
rr
ns
t
fr
A/
s
s
Z
thJC
DWLP55-12
DWLP55-12
DWLP55-12
VUE130-12
DWLP55-12
I
RM
Q
r
DWLP55-12
t
fr
V
FR
DWLP55-12
T
VJ
= 150C
T
VJ
= 100C
T
VJ
= 25C
T
VJ
= 100C
V
R
= 600 V
T
VJ
= 100C
V
R
= 600 V
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
T
VJ
= 100C
V
R
= 600 V
T
VJ
= 100C
V
R
= 15 A
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Fig. 7 Typical transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values