� 2005 IXYS All rights reserved
1 - 3
MCC 161
MCD 161
0540
Symbol
Conditions
Maximum Ratings
I
TRMS
T
VJ
= T
VJM
300
A
I
TAVM
T
C
= 85�C; 180� sine
165
A
I
TSM
T
VJ
= 45�C;
t = 10 ms (50 Hz)
6000
A
V
R
= 0
t = 8.3 ms (60 Hz)
6400
A
T
VJ
= T
VJM
;
t = 10 ms (50 Hz)
5250
A
V
R
= 0
t = 8.3 ms (60 Hz)
5600
A
I
2
dt
T
VJ
= 45�C;
t = 10 ms (50 Hz)
180000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz)
170000
A
2
s
T
VJ
= T
VJM
;
t = 10 ms (50 Hz)
137000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz)
128000
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
;
repetitive, I
T
= 500 A
150
A/�s
f = 50 Hz; t
P
= 200 �s;
V
D
=
2
/
3
V
DRM
;
I
G
= 0.5 A;
non repetitive, I
T
= I
TAVM
500
A/�s
di
G
/dt = 0.5 A/�s
(dv/dt)
cr
T
VJ
= T
VJM
; V
DR
=
2
/
3
V
DRM
1000
V/�s
R
GK
=
; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
;
t
P
= 30 �s
120
W
I
T
= I
TAVM
;
t
P
= 500 �s
60
W
P
GAV
8
W
V
RGM
10
V
T
VJ
-40...125
�C
T
VJM
125
�C
T
stg
-40...125
�C
V
ISOL
50/60 Hz, RMS; t = 1 min
3000
V~
I
ISOL
< 1 mA;
t = 1 s
3600
V~
M
d
Mounting torque (M6)
2.25-2.75
Nm
Terminal connection torque (M6)
4.5-5.5
Nm
Weight
Typical including screws
125
g
I
TRMS
= 2x300 A
I
TAVM
= 2x165 A
V
RRM
= 2000-2200 V
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
2100
2000
MCC 161-20io1 MCD 161-20io1
2300
2200
MCC 161-22io1 MCD 161-22io1
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated
Features
� International standard package
� Direct Copper Bonded Al
2
O
3
-ceramic
base plate
� Planar passivated chips
� Isolation voltage 3600 V~
� UL registered, E 72873
� Keyed gate/cathode twin pins
Applications
� Motor control
� Power converter
� Heat and temperature control for
industrial furnaces and chemical
processes
� Lighting control
� Contactless switches
Advantages
� Space and weight savings
� Simple mounting
� Improved temperature and power
cycling
� Reduced protection circuits
High Voltage Thyristor Module
1
2
3
6 7
5
4
IXYS reserves the right to change limits, test conditions and dimensions
MCD
MCC
3
6 7 1
5 4 2
3
1
5 4 2
� 2005 IXYS All rights reserved
2 - 3
MCC 161
MCD 161
0540
Symbol
Conditions
Characteristic Values
I
RRM
, I
DRM
V
R
= V
RRM
;
T
VJ
= T
VJM
40
mA
V
T
I
T
= 300A; T
VJ
= 25�C
1.36
V
V
T0
For power-loss calculations only (T
VJ
= T
VJM
)
0.8
V
r
T
1.6
m
V
GT
V
D
= 6 V;
T
VJ
= 25�C
2
V
T
VJ
= -40�C
2.6
V
I
GT
V
D
= 6 V;
T
VJ
= 25�C
150
mA
T
VJ
= -40�C
200
mA
V
GD
V
D
=
2
/
3
V
DRM
; T
VJ
= T
VJM
0.25
V
I
GD
V
D
=
2
/
3
V
DRM
; T
VJ
= T
VJM
10
mA
I
L
T
VJ
= 25�C; V
D
= 6 V; t
P
= 30 �s
200
mA
di
G
/dt = 0.45 A/�s; I
G
= 0.45 A
I
H
T
VJ
= 25�C; V
D
= 6 V; R
GK
=
150
mA
t
gd
T
VJ
= 25�C; V
D
= 1/2 V
DRM
2
�s
di
G
/dt = 0.5 A/�s; I
G
= 0.5 A
t
q
T
VJ
= T
VJM
; V
R
= 100 V; V
D
=
2
/
3
V
DRM
; t
P
= 200 �s
typ. 150
�s
dv/dt = 20 V/�s; I
T
= 160 A; -di/dt = 10A/�s
Q
S
T
VJ
= T
VJM
550
�C
I
RM
-di/dt = 50 A/�s; I
T
= 300 A
235
A
R
thJC
per thyristor; DC current
0.155
K/W
per module
0.078
K/W
R
thJK
per thyristor; DC current
0.225
K/W
per module
0.113
K/W
d
S
Creeping distance on surface
12.7
mm
d
A
Creepage distance in air
9.6
mm
a
Maximum allowable acceleration
50
m/s
2
Dimensions in mm (1 mm = 0.0394")
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L
(L = Left for pin pair 4/5)
UL 758, style 1385,
Type ZY 180R
(R = right for pin pair 6/7)
CSA class 5851, guide 460-1-1
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
0.5
1.5
0.0
1.0
2.0
0
50
100
150
200
250
300
350
400
450
500
I
T
,
I
F
V
T
, V
F
V
A
T
VJ
= 25�C
T
VJ
= 125�C
Fig 3:
Forward current vs. voltage
drop per thyristor/diode
� 2005 IXYS All rights reserved
3 - 3
MCC 161
MCD 161
0540
0
25
50
75
100
125
ms
I
FAVM
, I
TAVM
T
A
P
tot
0
100
200
300
400
0
200
400
600
800
1000
1200
1400
1600
1800
2000
C
W
A
P
tot
I
DAVM
T
A
R
thKA
K/W
0.02
0.04
0.06
0.1
0.15
0.20
0.30
0
50
100 150 200 250
0
40
80
120
160
200
240
280
320
360
400
s
0
25
50
75
100
125
A
0.001
0.01
0.1
1
0
1000
2000
3000
4000
5000
6000
t
T
VJ
= 45�C
T
VJ
= 125�C
1
10
10
4
10
5
10
6
I
2
t
t
A
2
s
T
VJ
= 45�C
T
VJ
= 125�C
T
C
0
25
50
75
100
125
0
50
100
150
200
250
300
350
A
I
TAVM
,
180� sin
DC
120� rect
60� rect
30� rect
�C
W
t
Z
thJC
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.0
0.1
0.2
0.3
K/W
s
DC
180�
120�
60�
30�
A
C
R
thKA
K/W
0.1
0.2
0.3
0.5
0.8
1.5
2
DC
180� sin
120� rect
60� rect
30� rect
I
FAVM
80% V
RRM
50 Hz
I
TSM
,
I
FSM
Fig. 4: Surge overload current
I
TSM
, I
FSM
= f(t)
Fig. 5: I
2
t versus time per diode
Fig. 6: Max. forward current at case
temperature I
TAVM/FAVM
= f (T
C
,d)
Fig. 7: Power dissipation vs. on-state current and ambient
temperature (per thyristor/diode)
Fig. 8: Power dissipation vs. direct output current and
ambient temperature (three phase rectifier bridge)
Fig. 9: Transient thermal impedance junction to case Z
thjC
at various conduction angles
Constants for Z
thJC
calculation (DC):
i
R
thi
(K/W)
t
i
(s)
1
0.012
0.00014
2
0.008
0.019
3
0.03
0.18
4
0.073
0.52
5
0.032
1.6
R
thJC
for various condition angles:
d
R
thJC
(K/W)
DC
_
0.155
180�
0.171
120�
0.184
60�
0.222
30�
0.294
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