2005 IXYS All rights reserved
1 - 3
MCC 161
MCD 161
0540
Symbol
Conditions
Maximum Ratings
I
TRMS
T
VJ
= T
VJM
300
A
I
TAVM
T
C
= 85C; 180 sine
165
A
I
TSM
T
VJ
= 45C;
t = 10 ms (50 Hz)
6000
A
V
R
= 0
t = 8.3 ms (60 Hz)
6400
A
T
VJ
= T
VJM
;
t = 10 ms (50 Hz)
5250
A
V
R
= 0
t = 8.3 ms (60 Hz)
5600
A
I
2
dt
T
VJ
= 45C;
t = 10 ms (50 Hz)
180000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz)
170000
A
2
s
T
VJ
= T
VJM
;
t = 10 ms (50 Hz)
137000
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz)
128000
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
;
repetitive, I
T
= 500 A
150
A/s
f = 50 Hz; t
P
= 200 s;
V
D
=
2
/
3
V
DRM
;
I
G
= 0.5 A;
non repetitive, I
T
= I
TAVM
500
A/s
di
G
/dt = 0.5 A/s
(dv/dt)
cr
T
VJ
= T
VJM
; V
DR
=
2
/
3
V
DRM
1000
V/s
R
GK
=
; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
;
t
P
= 30 s
120
W
I
T
= I
TAVM
;
t
P
= 500 s
60
W
P
GAV
8
W
V
RGM
10
V
T
VJ
-40...125
C
T
VJM
125
C
T
stg
-40...125
C
V
ISOL
50/60 Hz, RMS; t = 1 min
3000
V~
I
ISOL
< 1 mA;
t = 1 s
3600
V~
M
d
Mounting torque (M6)
2.25-2.75
Nm
Terminal connection torque (M6)
4.5-5.5
Nm
Weight
Typical including screws
125
g
I
TRMS
= 2x300 A
I
TAVM
= 2x165 A
V
RRM
= 2000-2200 V
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
2100
2000
MCC 161-20io1 MCD 161-20io1
2300
2200
MCC 161-22io1 MCD 161-22io1
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated
Features
International standard package
Direct Copper Bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Keyed gate/cathode twin pins
Applications
Motor control
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Contactless switches
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
High Voltage Thyristor Module
1
2
3
6 7
5
4
IXYS reserves the right to change limits, test conditions and dimensions
MCD
MCC
3
6 7 1
5 4 2
3
1
5 4 2
2005 IXYS All rights reserved
2 - 3
MCC 161
MCD 161
0540
Symbol
Conditions
Characteristic Values
I
RRM
, I
DRM
V
R
= V
RRM
;
T
VJ
= T
VJM
40
mA
V
T
I
T
= 300A; T
VJ
= 25C
1.36
V
V
T0
For power-loss calculations only (T
VJ
= T
VJM
)
0.8
V
r
T
1.6
m
V
GT
V
D
= 6 V;
T
VJ
= 25C
2
V
T
VJ
= -40C
2.6
V
I
GT
V
D
= 6 V;
T
VJ
= 25C
150
mA
T
VJ
= -40C
200
mA
V
GD
V
D
=
2
/
3
V
DRM
; T
VJ
= T
VJM
0.25
V
I
GD
V
D
=
2
/
3
V
DRM
; T
VJ
= T
VJM
10
mA
I
L
T
VJ
= 25C; V
D
= 6 V; t
P
= 30 s
200
mA
di
G
/dt = 0.45 A/s; I
G
= 0.45 A
I
H
T
VJ
= 25C; V
D
= 6 V; R
GK
=
150
mA
t
gd
T
VJ
= 25C; V
D
= 1/2 V
DRM
2
s
di
G
/dt = 0.5 A/s; I
G
= 0.5 A
t
q
T
VJ
= T
VJM
; V
R
= 100 V; V
D
=
2
/
3
V
DRM
; t
P
= 200 s
typ. 150
s
dv/dt = 20 V/s; I
T
= 160 A; -di/dt = 10A/s
Q
S
T
VJ
= T
VJM
550
C
I
RM
-di/dt = 50 A/s; I
T
= 300 A
235
A
R
thJC
per thyristor; DC current
0.155
K/W
per module
0.078
K/W
R
thJK
per thyristor; DC current
0.225
K/W
per module
0.113
K/W
d
S
Creeping distance on surface
12.7
mm
d
A
Creepage distance in air
9.6
mm
a
Maximum allowable acceleration
50
m/s
2
Dimensions in mm (1 mm = 0.0394")
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L
(L = Left for pin pair 4/5)
UL 758, style 1385,
Type ZY 180R
(R = right for pin pair 6/7)
CSA class 5851, guide 460-1-1
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
0.5
1.5
0.0
1.0
2.0
0
50
100
150
200
250
300
350
400
450
500
I
T
,
I
F
V
T
, V
F
V
A
T
VJ
= 25C
T
VJ
= 125C
Fig 3:
Forward current vs. voltage
drop per thyristor/diode
2005 IXYS All rights reserved
3 - 3
MCC 161
MCD 161
0540
0
25
50
75
100
125
ms
I
FAVM
, I
TAVM
T
A
P
tot
0
100
200
300
400
0
200
400
600
800
1000
1200
1400
1600
1800
2000
C
W
A
P
tot
I
DAVM
T
A
R
thKA
K/W
0.02
0.04
0.06
0.1
0.15
0.20
0.30
0
50
100 150 200 250
0
40
80
120
160
200
240
280
320
360
400
s
0
25
50
75
100
125
A
0.001
0.01
0.1
1
0
1000
2000
3000
4000
5000
6000
t
T
VJ
= 45C
T
VJ
= 125C
1
10
10
4
10
5
10
6
I
2
t
t
A
2
s
T
VJ
= 45C
T
VJ
= 125C
T
C
0
25
50
75
100
125
0
50
100
150
200
250
300
350
A
I
TAVM
,
180 sin
DC
120 rect
60 rect
30 rect
C
W
t
Z
thJC
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.0
0.1
0.2
0.3
K/W
s
DC
180
120
60
30
A
C
R
thKA
K/W
0.1
0.2
0.3
0.5
0.8
1.5
2
DC
180 sin
120 rect
60 rect
30 rect
I
FAVM
80% V
RRM
50 Hz
I
TSM
,
I
FSM
Fig. 4: Surge overload current
I
TSM
, I
FSM
= f(t)
Fig. 5: I
2
t versus time per diode
Fig. 6: Max. forward current at case
temperature I
TAVM/FAVM
= f (T
C
,d)
Fig. 7: Power dissipation vs. on-state current and ambient
temperature (per thyristor/diode)
Fig. 8: Power dissipation vs. direct output current and
ambient temperature (three phase rectifier bridge)
Fig. 9: Transient thermal impedance junction to case Z
thjC
at various conduction angles
Constants for Z
thJC
calculation (DC):
i
R
thi
(K/W)
t
i
(s)
1
0.012
0.00014
2
0.008
0.019
3
0.03
0.18
4
0.073
0.52
5
0.032
1.6
R
thJC
for various condition angles:
d
R
thJC
(K/W)
DC
_
0.155
180
0.171
120
0.184
60
0.222
30
0.294
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