2000 IXYS All rights reserved
1 - 4
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
MII 200-12 A4
MID 200-12 A4
MDI 200-12 A4
Symbol
Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
1200
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 20 k
W
1200
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
270
A
I
C80
T
C
= 80
C
180
A
I
CM
T
C
= 80
C, t
p
= 1 ms
360
A
t
SC
V
GE
= 15 V, V
CE
= V
CES
, T
J
= 125
C
10
m
s
(SCSOA)
R
G
= 6.8
W
, non repetitive
RBSOA
V
GE
= 15 V, T
J
= 125
C, R
G
= 6.8
W
I
CM
= 360
A
Clamped inductive load, L = 100
m
H
V
CEK
< V
CES
P
tot
T
C
= 25
C
1130
W
T
J
150
C
T
stg
-40 ... +150
C
V
ISOL
50/60 Hz, RMS
t = 1 min
4000
V~
I
ISOL
1 mA
t = 1 s
4800
V~
Insulating material: Al
2
O
3
M
d
Mounting torque (module)
2.25-2.75
Nm
20-25
lb.in.
(teminals)
2.5-3.7
Nm
22-33
lb.in.
d
S
Creepage distance on surface
10
mm
d
A
Strike distance through air
9.6
mm
a
Max. allowable acceleration
50
m/s
2
Weight
Typical
250
g
8.8
oz.
Data according to a single IGBT/FRED unless otherwise stated.
8
9
1
2
3
11
10
10
11
9
8
2
1
3
MII
2
1
3
10
11
MID
2
1
3
9
8
MDI
E 72873
I
C25
= 270 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.2 V
Features
q
NPT IGBT technology
q
low saturation voltage
q
low switching losses
q
switching frequency up to 30 kHz
q
square RBSOA, no latch up
q
high short circuit capability
q
positive temperature coefficient for
easy parallelling
q
MOS input, voltage controlled
q
ultra fast free wheeling diodes
q
package with DCB ceramic base plate
q
isolation voltage 4800 V
q
UL registered E72873
Advantages
q
space and weight savings
q
reduced protection circuits
Typical Applications
q
AC and DC motor control
q
AC servo and robot drives
q
power supplies
q
welding inverters
030
2000 IXYS All rights reserved
2 - 4
MII 200-12 A4
MID 200-12 A4
MDI 200-12 A4
Symbol
Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
(BR)CES
V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 6 mA, V
CE
= V
GE
4.5
6.5
V
I
CES
V
CE
= V
CES
T
J
= 25
C
10 mA
T
J
= 125
C
15
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
700
nA
V
CE(sat)
I
C
= 150 A, V
GE
= 15 V
2.2
2.7
V
C
ies
11
nF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
1.5
nF
C
res
0.65
nF
t
d(on)
100
ns
t
r
50
ns
t
d(off)
650
ns
t
f
50
ns
E
on
24.2
mJ
E
off
21
mJ
R
thJC
0.11 K/W
R
thJS
with heatsink compound
0.22
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
F
I
F
= 150 A, V
GE
= 0 V,
2.2
2.5
V
I
F
= 150 A, V
GE
= 0 V, T
J
= 125
C
1.8
1.9
V
I
F
T
C
= 25
C
300
A
T
C
= 80
C
200
A
I
RM
I
F
= 150 A, V
GE
= 0 V, -di
F
/dt = 1200 A/
m
s
125
A
t
rr
T
J
= 125
C, V
R
= 600 V
200
ns
R
thJC
0.23 K/W
R
thJS
with heatsink compound
0.45
K/W
Inductive load, T
J
= 125
C
I
C
= 150 A, V
GE
= 15 V
V
CE
= 600 V, R
G
= 6.8
W
Dimensions in mm (1 mm = 0.0394")
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125C)
V
0
= 1.5 V; R
0
= 7.0 mW
Free Wheeling Diode (typ. at T
J
= 125C)
V
0
= 1.3 V; R
0
= 3.4 mW
Thermal Response
IGBT (typ.)
C
th1
= 0.40 J/K; R
th1
= 0.110 K/W
C
th2
= 0.93 J/K; R
th2
= 0.003 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.28 J/K; R
th1
= 0.226 K/W
C
th2
= 0.51 J/K; R
th2
= 0.005 K/W
2000 IXYS All rights reserved
3 - 4
0
200
400
600
800
1000
0
20
40
60
80
100
0
50
100
150
200
250
0
1
2
3
4
0
100
200
300
400
500
600
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
50
100
150
200
250
300
350
0
200
400
600
800
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
50
100
150
200
250
300
350
13V
11V
T
J
= 25C
V
GE
=17V
T
J
= 125C
V
CE
= 600V
I
C
= 150A
15V
5
6
7
8
9
10
11
0
50
100
150
200
250
300
350
13V
11V
V
GE
=17V
15V
V
CE
= 20V
T
J
= 25C
9V
9V
V
CE
V
A
I
C
V
CE
A
I
C
V
V
V
V
GE
V
F
A
I
C
A
I
F
nC
Q
G
-di/dt
V
V
GE
A
I
RM
t
rr
ns
A/
m
s
200-12
T
J
= 125C
V
R
= 600V
I
F
= 150A
T
J
= 25C
T
J
= 125C
I
RM
t
rr
Fig. 1
Typ. output characteristics
Fig. 2 Typ. output characteristics
Fig. 3
Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5
Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
MII 200-12 A4
MID 200-12 A4
MDI 200-12 A4
2000 IXYS All rights reserved
4 - 4
Fig. 7
Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current
times versus collector current
Fig. 9
Typ. turn on energy and switching
Fig.10 Typ. turn off energy and switching
times versus gate resistor
times versus gate resistor
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance
RBSOA
0
100
200
300
0
30
60
90
0
40
80
120
0
100
200
300
0
20
40
60
80
0
200
400
600
800
0.00001
0.0001
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
0
4
8
12
16
20
24
28
0
10
20
30
40
50
0
400
800
1200
1600
2000
0
4
8
12
16
20
24
28
0
10
20
30
40
50
0
40
80
120
160
200
single pulse
V
CE
= 600V
V
GE
= 15V
R
G
= 6.8
W
T
J
= 125C
200-12
V
CE
= 600V
V
GE
= 15V
I
C
= 150A
T
J
= 125C
0
200
400
600
800
1000 1200
0
100
200
300
400
R
G
= 6.8
W
T
J
= 125C
V
CEK
< V
CES
V
CE
= 600V
V
GE
= 15V
R
G
= 6.8
W
T
J
= 125C
E
on
V
CE
= 600V
V
GE
= 15V
I
C
= 150A
T
J
= 125C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
mJ
E
off
mJ
E
on
ns
t
ns
t
R
G
W
R
G
W
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
A
MII 200-12 A4
MID 200-12 A4
MDI 200-12 A4
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