2000 IXYS All rights reserved
D6 - 5
150
250
300
600
22
200
33
90
-40...+150
-40...+125
110
280
3000
3600
12.7
9.6
50
0.550
0.450
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Dimensions in mm (1 mm = 0.0394")
Features
q
International standard package
with DCB ceramic base plate
q
Planar passivated chips
q
Short recovery time
q
Low switching losses
q
Soft recovery behaviour
q
Isolation voltage 3600 V~
q
UL registered E 72873
Applications
q
Antiparallel diode for high frequency
switching devices
q
Free wheeling diode in converters
and motor control circuits
q
Inductive heating and melting
q
Uninterruptible power supplies (UPS)
q
Ultrasonic cleaners and welders
Advantages
q
High reliability circuit operation
q
Low voltage peaks for reduced
protection circuits
q
Low noise switching
q
Low losses
Preliminary data
75
107
75
75
TBD
1200
1300
1080
1170
7200
7100
5800
5700
2.50-4/22-35
2.50-4/22-35
100
1.85
2.17
300
2.58
2.64
2
0.5
34
1.48
3.65
015
1
2
3
1
2
3
1
2
3
V
RSM
V
RRM
Type
V
V
MEA75-12 DA
MEK 75-12 DA
MEE 75-12 DA
1200
1200
Symbol
Test Conditions
Maximum Ratings
I
FRMS
T
case
=
C
A
I
FAV
T
case
=
C; rectangular, d = 0.5
A
I
FRM
t
P
< 10
s; rep. rating, pulse width limited by T
VJM
A
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
A
t = 8.3 ms (60 Hz), sine
A
T
VJ
= 150
C; t = 10 ms (50 Hz), sine
A
t = 8.3 ms (60 Hz), sine
A
I
2
t
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
A
2
s
t = 8.3 ms (60 Hz), sine
A
2
s
T
VJ
= 150
C; t = 10 ms (50 Hz), sine
A
2
s
t = 8.3 ms (60 Hz), sine
A
2
s
T
VJ
C
T
stg
C
T
Hmax
C
P
tot
T
case
= 25
C
W
V
ISOL
50/60 Hz, RMS t = 1 min
V~
I
ISOL
1 mA
t = 1 s
V~
M
d
Mounting torque (M5)
Nm/lb.in.
Terminal connection torque (M5)
Nm/lb.in.
d
S
Creep distance on surface
mm
d
A
Strike distance through air
mm
a
Maximum allowable acceleration
m/s
2
Weight
g
Symbol
Test Conditions
Characteristic Values (per diode)
typ.
max.
I
R
T
VJ
= 25
C
V
R
= V
RRM
mA
T
VJ
= 25
C
V
R
= 0.8 V
RRM
mA
T
VJ
= 125
C
V
R
= 0.8 V
RRM
mA
V
F
I
F
= A;
T
VJ
= 125
C
V
T
VJ
= 25
C
V
I
F
= A;
T
VJ
= 125
C
V
T
VJ
= 25
C
V
V
T0
For power-loss calculations only
V
r
T
m
R
thJH
DC current
K/W
R
thJC
DC current
K/W
t
rr
I
F
= A
T
VJ
= 100
C
ns
I
RM
V
R
= V
T
VJ
= 25
C
A
-di/dt = A/
s
T
VJ
= 100
C
A
Fast Recovery
Epitaxial Diode
(FRED) Module
MEA 75-12 DA
MEK 75-12 DA
MEE 75-12 DA
V
RRM
= 1200 V
I
FAV
= 75 A
t
rr
= 250 ns
TO-240 AA
1
2
3
2000 IXYS All rights reserved
D6 - 6
200
600
1000
0
400
800
150
200
250
300
350
0.001
0.01
0.1
1
10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
50
100
150
0.4
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800 1000
20
60
100
0
40
80
0.0
0.4
0.8
1.2
1.6
2.0
V
FR
di
F
/dt
A
200
600
1000
0
400
800
20
60
100
0
40
80
10
100
1000
0
2
4
6
8
10
0
1
2
3
0
25
50
75
100
125
150
175
200
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
C
A/
s
A/
s
t
rr
ns
t
fr
A/
s
s
75-12 DA
Fig. 7 Transient thermal impedance junction to heatsink
T
VJ
= 100C
V
R
= 600V
T
VJ
= 100C
I
F
= 150A
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus
voltage drop V
F
per leg
T
VJ
= 100C
V
R
= 600V
T
VJ
= 100C
V
R
= 600V
Q
r
I
RM
Fig. 4 Dynamic parameters Q
r
, I
RM
versus junction temperature T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
t
fr
T
VJ
=125C
T
VJ
= 25C
I
F
= 150A
I
F
= 100A
I
F
= 70A
I
F
= 150A
I
F
= 100A
I
F
= 70A
I
F
= 150A
I
F
= 100A
I
F
= 70A
Constants for Z
thJH
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.037
0.002
2
0.138
0.134
3
0.093
0.25
4
0.282
0.274
Z
thJH
MEA 75-12 DA MEE 75-12 DA
MEK 75-12 DA
V
FR
016
PDF 
ZIP