2000 IXYS All rights reserved
1 - 2
VBE 26-12NO7
ECO-PAC
TM
Single Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
I
dAV
= 32 A
V
RRM
= 1200 V
t
rr
= 40 ns
V
RSM
V
RRM
Typ
V
V
1200
1200
VBE 26-12NO7
Symbol
Conditions
Maximum Ratings
I
dAV
x
T
C
= 85C, module
32
A
I
dAVM
90
A
I
FSM
T
VJ
= 45C
t = 10 ms (50 Hz), sine
90
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
100
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
75
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
85
A
I
2
t
T
VJ
= 45C
t = 10 ms (50 Hz), sine
40
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
40
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
30
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
30
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque (M4)
1.5-2/14-18
Nm/lb.in.
Weight
typ.
19
g
Features
Package with DCB ceramic
base plate in low profile
Isolation voltage 3000 V~
Planar passivated chips
Low forward voltage drop
Leads suitable for PC board soldering
Applications
Supplies for DC power equipment
Input and output rectifiers for high
frequency
Battery DC power supplies
Field supply for DC motors
Advantages
Space and weight savings
Improved temperature and power
cycling capability
Small and light weight
Low noise switching
Data according to IEC 60747 refer to a single diode unless otherwise stated
x
for resistive load at bridge output.
D
K
A
N
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
V
R
= V
RRM
T
VJ
= 25C
0.1
mA
V
R
= V
RRM
T
VJ
= T
VJM
0.5
mA
V
F
I
F
= 15 A
T
VJ
= 25C
2.73
V
V
T0
for power-loss calculations only
1.32
V
r
T
30
m
W
R
thJC
per diode; DC current
1.6 K/W
R
thCH
per diode, DC current, typ.
0.3 K/W
I
RM
I
F
= 25 A, -diF/dt = 100 A/s
5
9.7
A
V
R
= 100 V, L = 0.05 mH, T
VJ
= 100C
t
rr
I
F
= 1 A; -di/dt = 100 A/s; V
R
= 30 V, T
VJ
= 25C
40
tbd
ns
a
Max. allowable acceleration
50
m/s
2
d
S
creeping distance on surface
11.2
mm
d
A
creepage distance in air
9.7
mm
IXYS reserves the right to change limits, test conditions and dimensions.
032
Dimensions in mm (1 mm = 0.0394")
2000 IXYS All rights reserved
2 - 2
200
600
1000
0
400
800
100
120
140
160
180
0.0001
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
40
80
120
0.0
0.4
0.8
1.2
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
10
20
30
40
50
100
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
0
5
10
15
20
25
30
35
40
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
m
s
A
V
m
C
A/
m
s
A/
m
s
t
rr
ns
t
fr
Z
thJC
A/
m
s
s
VBE 26-12NO7 / VUE 35-12NO7
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
T
VJ
= 100C
V
R
= 600V
T
VJ
= 100C
I
F
= 15A
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
T
VJ
= 100C
V
R
= 600V
T
VJ
= 100C
V
R
= 600V
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
Q
r
I
RM
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
t
fr
V
FR
Fig. 7 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.5464
0.0052
2
0.2104
0.0003
3
0.0432
0.0004
4
0.8
0.0092
T
VJ
=150C
T
VJ
=100C
T
VJ
= 25C
VBE 26-12NO7
NOTE: Fig. 2 to Fig. 6 shows typical values
PDF 
ZIP