IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
1 - 3
2002 IXYS All rights reserved
Module with HiPerFET
TM
H-Bridge and
Single Phase Mains Rectifier Bridge
Application
primary side of mains supplied
welding converters
switched mode power supplies
induction heaters
Features
H-bridge with
HiPerFET
TM
technology:
- low R
DSon
- unclamped inductive switching
(UIS) capability
- dv/dt ruggedness
- fast intrinsic reverse diode
- Kelvin source for easy drive
- low inductive, symmetrical current
paths
thermistor for internal temperature
measurement
package:
- high level of integration - only one
power semiconductor module
required for the whole primary side
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
Mains Rectifier Bridge D1 - D4
Symbol
Conditions
Maximum Ratings
V
RRM
1200
V
I
FAV25
T
C
= 25C; sine 180
45
A
I
FAV80
T
C
= 80C; sine 180
33
A
I
FSM
T
VJ
= 25C; t = 10 ms sine 50 Hz
400
A
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
F
I
F
= 20 A
T
VJ
= 25C
1.1
1.2
V
T
VJ
= 125C
1.0
V
I
R
V
R
= V
RRM
T
VJ
= 25C
0.02
mA
T
VJ
= 125C
0.4
mA
R
thJC
(per diode)
1.42 K/W
R
thJS
with heat transfer paste
2.8
K/W
V
DSS
= 500 V
R
DSon
= 116 m
V
RRM
= 1200 V
I
DAV25
= 90 A
206
IXYS reserves the right to change limits, test conditions and dimensions.
VBH 40-05B
Preliminary
2 - 3
2001 IXYS All rights reserved
VBH 40-05B
MOSFET H - Bridge T1 - T4
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ
= 25C to 150C
500
V
V
GS
20
V
I
D25
T
C
= 25C
40
A
I
D80
T
C
= 80C
30
A
I
F25
(diode) T
C
= 25C
40
A
I
F80
(diode) T
C
= 80C
30
A
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
R
DSon
V
GS
= 10 V;
I
D
= I
D80
116
m
V
GSth
V
DS
= 20 V;
I
D
= 8 mA
2
4
V
I
DSS
V
DS
= 0.8 V
DSS
;
V
GS
= 0 V; T
VJ
= 25C
0.4
mA
T
VJ
= 125C
0.5
mA
I
GSS
V
GS
= 20 V; V
DS
= 0 V
0.2
A
Q
g
270
nC
Q
gs
56
nC
Q
gd
124
nC
t
d(on)
50
ns
t
r
100
ns
t
d(off)
100
ns
t
f
80
ns
V
F
(diode) I
F
= 20 A;
V
GS
= 0 V
1.5
V
t
rr
(diode) I
F
= 40 A;
-di/dt = 200 A/s; V
DS
= 100V
300
ns
R
thJC
0.32 K/W
R
thJS
with heat transfer paste
0.47
K/W
V
GS
= 10 V; V
DS
= 0.5 V
DSS
; I
D
= 20A
V
GS
= 10 V; V
DS
= 0.5 V
DSS
;
I
D
= 20A; R
G
= 1
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
25
T = 25C
1950
2057
2170
B
25/100
3560
K
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2001 IXYS All rights reserved
Dimensions in mm (1 mm = 0.0394")
Module
Symbol
Conditions
Maximum Ratings
T
VJ
-40...+150
C
T
stg
-40...+125
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz; t = 1 min
3000
V~
M
d
Mounting torque (M5)
2 - 2.5
Nm
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
d
S
Creepage distance on surface
8
mm
d
A
Strike distance through air
8
mm
Weight
typ.
80
g
VBH 40-05B
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