2003 IXYS All rights reserved
1 - 2
312
Advanced Technical Information
VCO132
IXYS reserves the right to change limits, test conditions and dimensions.
I
TRMS
= 200A
I
TAVM
= 130A
V
RRM
= 800-1800 V
Thyristor Modules
ECO-PAC 2
Features
Isolation voltage 3600 V~
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board soldering
Applications
DC motor control
Light and temperature control
Softstart AC motor controller
Solid state switches
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power cycling
High power density
Small and light weight
Data according to IEC 60747 refer to a single thyristor unless otherwise stated
V
RSM
V
RRM
V
DSM
V
DRM
Typ
V
V
900
800
VCO 132 - 08io7
1300
1200
VCO 132 - 12io7
1500
1400
VCO 132 - 14io7
1700
1600
VCO 132 - 16io7
1900
1800
VCO 132 - 18io7
Symbol
Conditions
Maximum Ratings
I
TRMS
200
A
I
TAVM
T
C
= 85C; T
VJ
= 130C; 180 sine
130
A
I
TSM
T
VJ
= 45C; V
R
= 0 V;
t = 10 ms (50 Hz), sine
3600
A
t = 8.3 ms (60 Hz), sine
3850
A
T
VJ
= 125C; V
R
= 0 V; t = 10 ms (50 Hz), sine
3200
A
t = 8.3 ms (60 Hz), sine
3420
A
I
2
dt
T
VJ
= 45C; V
R
= 0 V;
t = 10 ms (50 Hz), sine
64800
A
2
s
t = 8.3 ms (60 Hz), sine
62300
A
2
s
T
VJ
= 125C; V
R
= 0 V; t = 10 ms (50 Hz), sine
51200
A
2
s
t = 8.3 ms (60 Hz), sine
49100
A
2
s
(di/dt)
cr
T
VJ
= 125C;
repetitive, I
T
= 250 A
150
A/s
f = 50 Hz; t
P
= 200 s;
V
D
=
2
/
3
V
DRM
;
I
G
= 0.5 A
non repetitive, I
T
= I
TAVM
500
A/s
di
G
/dt = 0.5 A/s;
(dv/dt)
cr
T
VJ
= 125C; V
DR
=
2
/
3
V
DRM
1000
V/s
R
GK
=
, method 1 (linear voltage rise)
P
GM
T
VJ
= 125C;
t
P
= 30 ms
10
W
I
T
= I
TAVM
;
t
P
= 300 ms
5
W
P
GAVM
0.5
W
V
RGM
10
V
T
VJ
-40 ... + 130
C
T
VJM
for 10 sec
150
C
T
stg
-40 ... + 125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
3000
V ~
I
ISOL
< 1 mA
t = 1 s
3600
V ~
M
d
Mounting torque
(M4)
1.5 - 2.0
Nm
14 - 18
lb.in.
Weight
typ.
24
g
VCO 132
K-12
ACE-1
SVX-18
E-3
2003 IXYS All rights reserved
2 - 2
312
Advanced Technical Information
VCO132
Dimensions in mm (1 mm = 0.0394")
Component
Symbol
Conditions
Characteristic Values
min.
typ.
max.
I
D
, I
R
T
VJ
= 125C; V
R
= V
RRM
; V
D
= V
DRM
10
mA
V
T
I
T
= 200 A; T
VJ
= 25C
1.3
V
V
TO
For power-loss calculations only
0.8
V
r
T
1.65 m
V
GT
V
D
= 6 V;
T
VJ
= 25C
1.5
V
T
VJ
= -40C
1.6
V
I
GT
V
D
= 6 V;
T
VJ
= 25C
300
mA
T
VJ
= -40C
400
mA
V
GD
T
VJ
= 125C;
V
D
=
2
/
3
V
DRM
0.2
V
I
GD
T
VJ
= 125C;
V
D
=
2
/
3
V
DRM
10
mA
I
L
T
VJ
= 25C; t
P
= 10 s
450
mA
I
G
= 0.5 A; di
G
/dt = 0.5 A/
s
I
H
T
VJ
= 25C; V
D
= 6 V; R
GK
=
200
mA
t
gd
T
VJ
= 25C; V
D
= V
DRM
2
s
I
G
= 0.5 A; di
G
/dt = 0.5 A/
s
R
thJC
per Thyristor; DC
0.25 K/W
R
thJH
per Thyristor; DC; typ.
0,35
K/W
d
S
Creeping distance on surface
11.2 mm
d
A
Creeping distance in air
5.0 mm
a
Max. allowable acceleration
50 m/s
2
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