2003 IXYS All rights reserved
1 - 4
VID
160-12P1
VIO
160-12P1 VDI
160-12P1
IXYS reserves the right to change limits, test conditions and dimensions.
303
B3
I
C25
= 169 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.9 V
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25C to 150C
1200
V
V
GES
20
V
I
C25
T
C
= 25C
169
A
I
C80
T
C
= 80C
117
A
I
CM
V
GE
= 15 V; R
G
= 6.8
; T
VJ
= 125C
200
A
V
CEK
RBSOA, Clamped inductive load; L = 100 H
V
CES
t
SC
V
CE
= V
CES
; V
GE
= 15 V; R
G
= 6.8
; T
VJ
= 125C
10
s
(SCSOA)
non-repetitive
P
tot
T
C
= 25C
694
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 160 A; V
GE
= 15 V; T
VJ
= 25C
2.9
3.5
V
T
VJ
= 125C
3.3
V
GE(th)
I
C
= 4 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V;
T
VJ
= 25C
6
mA
T
VJ
= 125C
19
mA
I
GES
V
CE
= 0 V; V
GE
=
20 V
400
nA
t
d(on)
100
ns
t
r
60
ns
t
d(off)
600
ns
t
f
90
ns
E
on
16.1
mJ
E
off
14.6
mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
6.5
nF
R
thJC
(per IGBT)
0.18 K/W
R
thJH
with heatsink compound (0.42 K/m.K; 50 m)
0.36
K/W
Inductive load, T
VJ
= 125C
V
CE
= 600 V; I
C
= 100 A
V
GE
= 15/0 V; R
G
= 6.8
IGBT Modules
in ECO-PAC 2
Short Circuit SOA Capability
Square RBSOA
Preliminary data sheet
VIO
IJK
LMN
VDI
X15
X16
NTC
AC1
PS18
IK10
L9
T16
VID
IK10
SV18
AC1
L9
F1
X15
X16
NTC
Pin arangement see outlines
Features
NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
FRED diodes
- fast reverse recovery
- low forward voltage
Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Advantages
space and weight savings
reduced protection circuits
leads with expansion bend for stress relief
Typical Applications
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
A
S
2003 IXYS All rights reserved
2 - 4
VID
160-12P1
VIO
160-12P1 VDI
160-12P1
IXYS reserves the right to change limits, test conditions and dimensions.
303
B3
Reverse diodes (FRED)
Symbol
Conditions
Maximum Ratings
I
F25
T
C
= 25C
154
A
I
F80
T
C
= 80C
97
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 100 A; T
VJ
= 25C
2.3
2.7
V
T
VJ
= 125C
1.7
V
I
RM
I
F
= 75 A; di
F
/dt = 750 A/s; T
VJ
= 125C
79
A
t
rr
V
R
= 600 V; V
GE
= 0 V
220
ns
R
thJC
0.45 K/W
R
thJH
with heatsink compound (0.42 K/m.K; 50 m)
0.9
K/W
Module
Symbol
Conditions
Maximum Ratings
T
VJ
-40...+150
C
T
stg
-40...+150
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz
3000
V~
M
d
mounting torque (M4)
1.5 - 2.0
Nm
14 - 18
lb.in.
a
Max. allowable acceleration
50
m/s
2
Symbol
Conditions
Characteristic Values
min. typ.
max.
d
S
Creepage distance on surface
(Pin to heatsink)
11.2
mm
d
A
Strike distance in air
(Pin to heatsink)
11.2
mm
Weight
24
g
VID
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
25
T = 25C
4.75
5.0
5.25 k
B
25/50
3375
K
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.
VIO
VDI
2003 IXYS All rights reserved
3 - 4
VID
160-12P1
VIO
160-12P1 VDI
160-12P1
IXYS reserves the right to change limits, test conditions and dimensions.
303
B3
0
200
400
600
800
1000
0
40
80
120
0
100
200
300
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0
50
100
150
200
250
300
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0
50
100
150
200
250
0
100
200
300
400
500
0
5
10
15
20
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0
50
100
150
200
250
13V
11V
T
J
= 25C
V
GE
=17V
T
J
= 125C
V
CE
= 600V
I
C
= 100A
15V
5
6
7
8
9
10
11
0
50
100
150
200
250
13V
11V
V
GE
=17V
15V
V
CE
= 20V
T
J
= 25C
9V
9V
V
CE
V
A
I
C
V
CE
A
I
C
V
V
V
V
GE
V
F
A
I
C
A
I
F
nC
Q
G
-di/dt
V
V
GE
A
I
RM
t
rr
ns
A/
s
156T120
T
J
= 125C
V
R
= 600V
I
F
= 100A
T
J
= 25C
T
J
= 125C
I
RM
t
rr
156T120
156T120
156T120
156T120
156T120
Fig. 1
Typ. output characteristics
Fig. 2 Typ. output characteristics
Fig. 3
Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5
Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
2003 IXYS All rights reserved
4 - 4
VID
160-12P1
VIO
160-12P1 VDI
160-12P1
IXYS reserves the right to change limits, test conditions and dimensions.
303
B3
0
50
100
150
200
0
10
20
30
40
0
30
60
90
120
0
50
100
150
200
0
10
20
30
40
0
200
400
600
800
0,00001 0,0001
0,001
0,01
0,1
1
0,00001
0,0001
0,001
0,01
0,1
1
0
8
16
24
32
40
48
56
0
5
10
15
20
25
0
300
600
900
1200
1500
0
8
16
24
32
40
48
56
0
10
20
30
40
50
0
60
120
180
240
300
single pulse
V
CE
= 600V
V
GE
= 15V
R
G
= 6.8
T
J
= 125C
V
CE
= 600V
V
GE
= 15V
I
C
= 100A
T
J
= 125C
0
200
400
600
800 1000 1200
0
40
80
120
160
200
240
R
G
= 6.8
T
J
= 125C
V
CEK
< V
CES
V
CE
= 600V
V
GE
= 15V
R
G
= 6.8
T
J
= 125C
E
on
V
CE
= 600V
V
GE
= 15V
I
C
= 100A
T
J
= 125C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
mJ
E
off
mJ
E
on
ns
t
ns
t
R
G
R
G
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
A
156T120
156T120
156T120
156T120
156T120
VDI...160-12P1
Fig. 7
Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current
times versus collector current
Fig. 9
Typ. turn on energy and switching
Fig.10 Typ. turn off energy and switching
times versus gate resistor
times versus gate resistor
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance
RBSOA
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