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Электронный компонент: VDI25-12P1

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2003VDI IXYS All rights reserved
1 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
VDI
25-12P1 VII
25-12P1
VID
25-12P1 VIO
25-12P1
303
B3
I
C25
= 30 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.6V
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25C to 150C
1200
V
V
GES
20
V
I
C25
T
C
= 25C
30
A
I
C80
T
C
= 80C
21
A
I
CM
V
GE
= 15 V; R
G
= 82
; T
VJ
= 125C
35
A
V
CEK
RBSOA, Clamped inductive load; L = 100 H
V
CES
t
SC
V
CE
= V
CES
; V
GE
= 15 V; R
G
= 82
; T
VJ
= 125C
10
s
(SCSOA)
non-repetitive
P
tot
T
C
= 25C
130
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 25 A; V
GE
= 15 V; T
VJ
= 25C
2.6
3.3
V
T
VJ
= 125C
2.9
V
V
GE(th)
I
C
= 0.6 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V;
T
VJ
= 25C
0.9
mA
T
VJ
= 125C
3.7
mA
I
GES
V
CE
= 0 V; V
GE
=
20 V
100
nA
t
d(on)
100
ns
t
r
75
ns
t
d(off)
500
ns
t
f
70
ns
E
on
2.7
mJ
E
off
2.1
mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
1
nF
R
thJC
(per IGBT)
0.96 K/W
R
thJH
with heatsink compound (0.42 K/m.K; 50 m)
1.92
K/W
Inductive load, T
VJ
= 125C
V
CE
= 600 V; I
C
= 17.5 A
V
GE
= 15/0 V; R
G
= 82
IGBT Modules
in ECO-PAC 2
Short Circuit SOA Capability
Square RBSOA
VII
P9
G10
X18
L9
E2
K10
X16
X13
X15
NTC
VDI
X15
X16
NTC
AC1
PS18
IK10
L9
T16
Preliminary data sheet
Pin arangement see outlines
VID
IK10
SV18
AC1
L9
F1
X15
X16
NTC
Features
NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
FRED diodes
- fast reverse recovery
- low forward voltage
Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Advantages
space and weight savings
reduced protection circuits
leads with expansion bend for stress relief
Typical Applications
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
VIO
JK
LN
A
S
2003VDI IXYS All rights reserved
2 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
VDI
25-12P1 VII
25-12P1
VID
25-12P1 VIO
25-12P1
303
B3
Reverse diodes (FRED)
Symbol
Conditions
Maximum Ratings
I
F25
T
C
= 25C
26
A
I
F80
T
C
= 80C
17
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 17.5 A; T
VJ
= 25C
2.48
2.79
V
T
VJ
= 125C
1.84
V
I
RM
I
F
= 15 A; di
F
/dt = 400 A/s; T
VJ
= 125C
16
A
t
rr
V
R
= 600 V; V
GE
= 0 V
130
ns
R
thJC
2.3 K/W
R
thJH
with heatsink compound (0.42 K/m.K; 50 m)
4.6
K/W
Module
Symbol
Conditions
Maximum Ratings
T
VJ
-40...+150
C
T
stg
-40...+150
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz
3000
V~
M
d
mounting torque (M4)
1.5 - 2.0
Nm
14 - 18
lb.in.
a
Max. allowable acceleration
50
m/s
2
Symbol
Conditions
Characteristic Values
min. typ.
max.
d
S
Creepage distance on surface
(Pin to heatsink)
11.2
mm
d
A
Strike distance in air
(Pin to heatsink)
11.2
mm
Weight
24
g
VII
VDI
VID
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
25
T = 25C
4.75
5.0
5.25 k
B
25/50
3375
K
VIO
2003VDI IXYS All rights reserved
3 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
VDI
25-12P1 VII
25-12P1
VID
25-12P1 VIO
25-12P1
303
B3
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
0
200
400
600
800
1000
0
10
20
30
40
50
0
40
80
120
160
200
0
1
2
3
4
5
6
7
0
10
20
30
40
50
0
20
40
60
80
100
0
5
10
15
20
0
1
2
3
4
5
6
7
0
10
20
30
40
50
V
CE
V
I
C
V
CE
A
I
C
V
nC
Q
G
-di/dt
V
V
GE
I
RM
t
rr
A/
s
I
RM
t
rr
9V
11V
V
GE
= 17V
15V
13V
A
11V
V
GE
= 17V
15V
13V
A
4
6
8
10
12
14
16
0
10
20
30
40
50
V
V
GE
A
I
C
T
VJ
= 25C
T
VJ
= 125C
0
1
2
3
4
0
10
20
30
40
50
V
V
F
I
F
T
VJ
= 25C
T
VJ
= 125C
A
ns
9V
T
VJ
= 25C
25T120
25T120
25T120
25T120
25T120
25T120
T
VJ
= 125C
T
VJ
= 125C
V
R
= 600V
I
F
= 15A
V
CE
= 600V
I
C
= 15A
V
CE
= 20V
2003VDI IXYS All rights reserved
4 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
VDI
25-12P1 VII
25-12P1
VID
25-12P1 VIO
25-12P1
303
B3
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
0
10
20
30
0
2
4
6
0
40
80
120
0
10
20
30
0
2
4
6
0
200
400
600
0,00001 0,0001 0,001
0,01
0,1
1
10
0,0001
0,001
0,01
0,1
1
10
0
20
40
60
80
100
120
140
0,0
0,5
1,0
1,5
2,0
0
200
400
600
800
0
20
40
60
80
100
120
140
0
1
2
3
0
50
100
150
single pulse
VDI...25-12P1
V
CE
= 600V
V
GE
= 15V
I
C
= 15A
T
VJ
= 125C
0
200
400
600
800 1000 1200 1400
0
10
20
30
40
R
G
= 82
T
VJ
= 125C
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
R
G
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
A
mJ
ns
ns
mJ
25T120
25T120
25T120
25T120
25T120
V
CE
= 600V
V
GE
= 15V
R
G
= 82
T
VJ
= 125C
V
CE
= 600V
V
GE
= 15V
R
G
= 82
T
VJ
= 125C
V
CE
= 600V
V
GE
= 15V
I
C
= 15A
T
VJ
= 125C