2003 IXYS All rights reserved
1 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
VDI
75-06P1 VII
75-06P1
VID
75-06P1 VIO
75-06P1
303
B3
Features
NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
FRED diodes
- fast reverse recovery
- low forward voltage
Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Advantages
space and weight savings
reduced protection circuits
leads with expansion bend for stress relief
Typical Applications
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
I
C25
= 69 A
V
CES
= 600 V
V
CE(sat) typ.
= 2.3 V
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25C to 150C
600
V
V
GES
20
V
I
C25
T
C
= 25C
69
A
I
C80
T
C
= 80C
48
A
I
CM
V
GE
= 15 V; R
G
= 22
; T
VJ
= 125C
100
A
V
CEK
RBSOA, Clamped inductive load; L = 100 H
V
CES
t
SC
V
CE
= V
CES
; V
GE
= 15 V; R
G
= 22
; T
VJ
= 125C
10
s
(SCSOA)
non-repetitive
P
tot
T
C
= 25C
208
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 75 A; V
GE
= 15 V; T
VJ
= 25C
2.3
2.8
V
T
VJ
= 125C
2.8
V
V
GE(th)
I
C
= 1 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V;
T
VJ
= 25C
0.8
mA
T
VJ
= 125C
4.4
mA
I
GES
V
CE
= 0 V; V
GE
=
20 V
100
nA
t
d(on)
50
ns
t
r
55
ns
t
d(off)
300
ns
t
f
30
ns
E
on
1.8
mJ
E
off
1.4
mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
2.8
nF
R
thJC
(per IGBT)
0.6 K/W
R
thJH
with heatsink compound (0.42 K/m.K; 50 m)
1.2
K/W
Inductive load, T
VJ
= 125C
V
CE
= 300 V; I
C
= 40 A
V
GE
= 15/0 V; R
G
= 22
IGBT Modules
in ECO-PAC 2
Short Circuit SOA Capability
Square RBSOA
Preliminary data sheet
Pin arangement see outlines
VII
OP9
GH10
VX18
L9
E2
K10
X16
X13
X15
NTC
VIO
IJK
LMN
A
VDI
X15
X16
NTC
AC1
PS18
IK10
L9
T16
VID
IK10
SV18
AC1
L9
F1
X15
X16
NTC
S
2003 IXYS All rights reserved
2 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
VDI
75-06P1 VII
75-06P1
VID
75-06P1 VIO
75-06P1
303
B3
Reverse diodes (FRED)
Symbol
Conditions
Maximum Ratings
I
F25
T
C
= 25C
56
A
I
F80
T
C
= 80C
35
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 40 A; T
VJ
= 25C
2.32
2.59
V
T
VJ
= 125C
1.58
V
I
RM
I
F
= 30 A; di
F
/dt = 500 A/s; T
VJ
= 125C
15
A
t
rr
V
R
= 300 V; V
GE
= 0 V
70
ns
R
thJC
1.3 K/W
R
thJH
with heatsink compound (0.42 K/m.K; 50 m)
2.6
K/W
Module
Symbol
Conditions
Maximum Ratings
T
VJ
-40...+150
C
T
stg
-40...+150
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz
3000
V~
M
d
mounting torque (M4)
1.5 - 2.0
Nm
14 - 18
lb.in.
a
Max. allowable acceleration
50
m/s
2
Symbol
Conditions
Characteristic Values
min. typ.
max.
d
S
Creepage distance on surface
(Pin to heatsink)
11.2
mm
d
A
Strike distance in air
(Pin to heatsink)
11.2
mm
Weight
24
g
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
25
T = 25C
4.75
5.0
5.25 k
B
25/50
3375
K
VID
VII
VDI
VIO
2003 IXYS All rights reserved
3 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
VDI
75-06P1 VII
75-06P1
VID
75-06P1 VIO
75-06P1
303
B3
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
0
200
400
600
800
1000
0
10
20
30
40
50
0
30
60
90
120
150
0
1
2
3
4
5
6
0
30
60
90
120
150
0
40
80
120
160
0
5
10
15
20
0
1
2
3
4
5
6
0
30
60
90
120
150
V
CE
= 300 V
I
C
= 50 A
V
CE
V
I
C
V
CE
A
I
C
V
nC
Q
G
-di/dt
V
V
GE
I
RM
t
rr
A/
s
I
RM
t
rr
9V
11V
A
9V
11V
V
GE
= 17 V
15 V
13 V
A
4
6
8
10
12
14
16
0
30
60
90
120
150
V
V
GE
A
I
C
T
VJ
= 25C
T
VJ
= 125C
0,0
0,5
1,0
1,5
2,0
0
15
30
45
60
75
90
V
V
F
I
F
T
VJ
= 25C
T
VJ
= 125C
A
ns
42T60
42T60
42T60
42T60
42T60
42T60
T
VJ
= 25C
V
CE
= 20 V
T
VJ
= 125C
V
R
= 300 V
I
F
= 30 A
V
GE
= 17 V
15 V
13 V
T
VJ
= 125C
2003 IXYS All rights reserved
4 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
VDI
75-06P1 VII
75-06P1
VID
75-06P1 VIO
75-06P1
303
B3
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
0
40
80
120
0,0
2,5
5,0
7,5
10,0
0
25
50
75
100
0
40
80
120
0
1
2
3
4
0
100
200
300
400
0,00001 0,0001 0,001
0,01
0,1
1
10
0,0001
0,001
0,01
0,1
1
10
0
10
20
30
40
50
60
0
1
2
3
0
200
400
600
0
10
20
30
40
50
60
1
2
3
4
20
40
60
80
single pulse
0
100
200
300
400
500
600
700
0
30
60
90
120
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
R
G
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
V
A
mJ
ns
ns
mJ
42T60
42T60
42T60
42T60
42T60
V
CE
= 300 V
V
GE
= 15 V
R
G
= 22
T
VJ
= 125C
V
CE
= 300 V
V
GE
= 15 V
I
C
= 50 A
T
VJ
= 125C
R
G
= 22
T
VJ
= 125C
V
CE
= 300 V
V
GE
= 15 V
I
C
= 50 A
T
VJ
= 125C
V
CE
= 300 V
V
GE
= 15 V
R
G
= 22
T
VJ
= 125C
VID...75-06P1
diode
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