2000 IXYS All rights reserved
1 - 3
I
dAVM
= 21 A
V
RRM
= 800-1600 V
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
900
800
VHF 15-08io5
1300
1200
VHF 15-12io5
1500
1400
VHF 15-14io5
1700
1600
VHF 15-16io5
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
x
for resistive load
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol
Test Conditions
Maximum Ratings
I
dAV
T
K
= 85
C, module
15
A
I
dAVM
x
module
21
A
I
FRMS
, I
TRMS
per leg
15
A
I
FSM
, I
TSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
190
A
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
210
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
170
A
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
190
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
160
A
2
s
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
180
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
140
A
2
s
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
145
A
2
s
(di/dt)
cr
T
VJ
= 125
C
repetitive, I
T
= 50 A
150
A/
m
s
f =50 Hz, t
P
=200
m
s
V
D
= 2/3 V
DRM
I
G
= 0.3 A,
non repetitive, I
T
= 1/2 I
dAV
500
A/
m
s
di
G
/dt = 0.3 A/
m
s
(dv/dt)
cr
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
1000
V/
m
s
R
GK
=
; method 1 (linear voltage rise)
V
RGM
10
V
P
GM
T
VJ
= T
VJM
t
p
=
30
m
s
10
W
I
T
= I
TAVM
t
p
= 500
m
s
5
W
t
p
=
10 ms
1
W
P
GAVM
0.5
W
T
VJ
-40...+125
C
T
VJM
125
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque
(M5)
2-2.5
Nm
(10-32 UNF)
18-22
lb.in.
Weight
50
g
Features
q
Package with DCB ceramic base
plate
q
Isolation voltage 3600 V~
q
Planar passivated chips
q
1/4" fast-on terminals
q
UL registered E 72873
Applications
q
Supply for DC power equipment
q
DC motor control
Advantages
q
Easy to mount with two screws
q
Space and weight savings
q
Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
VHF 15
Half Controlled
Single Phase Rectifier Bridge
with Freewheeling Diode
1
2
3
6
8
4
2
8
6
4
3
1
2000 IXYS All rights reserved
2 - 3
Symbol
Test Conditions
Characteristic Values
I
R
, I
D
V
R
= V
RRM
; V
D
= V
DRM
T
VJ
= T
VJM
5
mA
T
VJ
= 25
C
0.3
mA
V
T
, V
F
I
T
, I
F
= 45 A; T
VJ
= 25
C
2.8
V
V
T0
For power-loss calculations only (T
VJ
= 125
C)
1.0
V
r
T
40
m
W
V
GT
V
D
= 6 V;
T
VJ
= 25
C
1.0
V
T
VJ
= -40
C
1.2
V
I
GT
V
D
= 6 V;
T
VJ
= 25
C
65
mA
T
VJ
= -40
C
80
mA
T
VJ
= 125
C
50
mA
V
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
0.2
V
I
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
5
mA
I
L
I
G
= 0.3 A; t
G
= 30
m
s;
T
VJ
= 25
C
150
mA
di
G
/dt = 0.3 A/
m
s;
T
VJ
= -40
C
200
mA
T
VJ
= 125
C
100
mA
I
H
T
VJ
= 25
C; V
D
= 6 V; R
GK
=
100
mA
t
gd
T
VJ
= 25
C; V
D
= 1/2 V
DRM
2
m
s
I
G
= 0.3 A; di
G
/dt = 0.3 A/
m
s
t
q
T
VJ
= 125
C, I
T
= 15 A, t
P
= 300
m
s, V
R
= 100 V
typ.
150
m
s
Q
r
di/dt = -10 A/
m
s, dv/dt = 20 V/
m
s, V
D
= 2/3 V
DRM
75
m
C
R
thJC
per thyristor (diode); DC current
2.4
K/W
per module
0.6
K/W
R
thJK
per thyristor (diode); DC current
3.0
K/W
per module
0.75
K/W
d
S
Creepage distance on surface
12.6
mm
d
A
Creepage distance in air
6.3
mm
a
Max. allowable acceleration
50
m/s
2
VHF 15
Fig. 1 Gate trigger range
Fig. 2 Gate controlled delay time t
gd
1
10
100
1000
0.1
1
10
I
G
V
G
mA
1: I
GT
, T
VJ
= 125C
2: I
GT
, T
VJ
= 25C
3: I
GT
, T
VJ
= -40C
V
4: P
GAV
= 0.5 W
5: P
GM
= 1 W
6: P
GM
= 10 W
I
GD
, T
VJ
= 125C
4
2
1
5
6
10
100
1000
1
10
100
1000
s
t
gd
T
VJ
= 25C
typ.
Limit
mA
I
G
3
750
2000 IXYS All rights reserved
3 - 3
Fig. 3 Surge overload current per chip
I
FSM
: Crest value, t: duration
Fig. 5 Max. forward current at
heatsink temperature
Fig. 4 I
2
t versus time (1-10 ms)
per chip
Fig. 6 Power dissipation versus direct output current and ambient temperature
Fig. 7 Transient thermal impedance junction to heatsink per chip
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.34
0.0344
2
1.16
0.12
3
1.5
0.5
VHF 15
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