2000 IXYS All rights reserved
1 - 2
Features
Package with DCB ceramic
base plate
Isolation voltage 3000 V~
Planar passivated chips
Low forward voltage drop
Leads suitable for PC board soldering
Applications
q
Supply for DC power equipment
q
DC motor control
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
Small and light weight
Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated
x
for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions.
I
dAV
= 32 A
V
RRM
= 600-1200 V
Single Phase Rectifier Bridge
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
700
600
VHF 25-06io7
900
800
VHF 25-08io7
1300
1200
VHF 25-12io7
VHF 25
Symbol
Test Conditions
Maximum Ratings
I
dAV
x
T
C
= 85C, module
32
A
I
TAVM
/I
FAVM
T
C
= 85
C; (180
sine ; per thyristor)
16
A
I
TSM
/I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
200
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
210
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
180
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
190
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
200
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
150
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
160
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
150
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 20 A
100
A/
m
s
f =50 Hz, t
P
=200
m
s
V
D
= 2/3 V
DRM
I
G
= 0.15 A
non repetitive, I
T
= I
TAVM
500
A/
m
s
di
G
/dt = 0.15 A/
m
s
(dv/dt)
cr
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
500
V/
m
s
R
GK
=
; method 1 (linear voltage rise)
V
RGM
10
V
P
GM
T
VJ
= T
VJM
t
p
=
30
m
s
5
W
I
T
= I
TAVM
t
p
= 300
m
s
2.5
W
P
GAVM
0.5
W
T
VJ
-40...+125
C
T
VJM
125
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque (M4)
1.5 - 2
Nm
14 - 18
lb.in.
Weight
typ.
18
g
K
D
H
N
A
G
002
Preliminary data
2000 IXYS All rights reserved
2 - 2
Dimensions in mm (1 mm = 0.0394")
Symbol
Test Conditions
Characteristic Values
I
D
, I
R
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
5
mA
V
T
I
T
= 20 A; T
VJ
= 25
C
1.6
V
V
T0
For power-loss calculations only (T
VJ
= 125
C)
0.85
V
r
T
27
m
W
V
GT
V
D
= 6 V;
T
VJ
= 25
C
1.5
V
T
VJ
= -40
C
2.5
V
I
GT
V
D
= 6 V;
T
VJ
= 25
C
25
mA
T
VJ
= -40
C
50
mA
V
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
0.2
V
I
GD
3
mA
I
L
T
VJ
= 25
C; t
P
= 10
m
s
75
mA
I
G
= 0.1 A; di
G
/dt = 0.1 A/
m
s
I
H
T
VJ
= 25
C; V
D
= 6 V; R
GK
=
50
mA
t
gd
T
VJ
= 25
C; V
D
= 1/2 V
DRM
2
m
s
I
G
= 0.1 A; di
G
/dt = 0.1 A/
m
s
R
thJC
per thyristor; DC
1.3
K/W
per module
0.22
K/W
R
thJK
per thyristor; DC
1.8
K/W
per module
0.3
K/W
d
S
Creeping distance on surface
11.2
mm
d
A
Creepage distance in air
9.5
mm
a
Max. allowable acceleration
50
m/s
2
VHF 25
002
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