2002 IXYS All rights reserved
1 - 2
Advanced Technical Information
VUB 116 / 145
240
Symbol
Conditions
Maximum Ratings
VUB 116
VUB 145
V
RRM
1600
1600
V
I
dAVM
T
C
= 100C, sinusoidal 120
116
145
A
I
FSM
T
VJ
= 45C, t = 10 ms, V
R
= 0 V
650
900
A
T
VJ
= 150C, t = 10 ms, V
R
= 0 V
570
780
A
I
2
t
T
VJ
= 45C, t = 10 ms, V
R
= 0 V
2110
4050
A
T
VJ
= 150C, t = 10 ms, V
R
= 0 V
1620
3040
A
P
tot
T
C
= 25C per diode
190
250
W
V
CES
T
VJ
= 25C to 150C
1200
1200
V
V
GE
Continuous
20
20
V
I
C25
T
C
= 25C, DC
95
141
A
I
C80
T
C
= 80C, DC
67
100
A
I
CM
t
p
= Pulse width limited by T
VJM
100
150
A
P
tot
T
C
= 25C
380
570
W
V
RRM
1200
V
I
FAV
T
C
= 80C, rectangular d = 0.5
27
A
I
FRMS
T
C
= 80C, rectangular d = 0.5
38
A
I
FRM
T
C
= 80C, t
P
= 10 s, f = 5 kHz
tbd
A
I
FSM
T
VJ
= 45C, t = 10 ms
200
A
P
tot
T
C
= 25C
130
W
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, t = 1 min
2500
V~
I
ISOL
1 mA, t = 1 s
3000
V~
M
d
Mounting torque
2.25...2.75
Nm
20...25
lb.in.
d
S
Creep distance on surface
12.7
mm
d
A
Strike distance in air
9.6
mm
a
Maximum allowable acceleration
50
m/s
2
Weight
typ.
180
g
V
RRM
Type
V
1600
VUB 116-16 NO1
1600
VUB 145-16 NO1
IGBT
Fast Recovery Diode
Module
Rectifier Diodes
Features
Soldering connections for PCB mounting
Convenient package outline
Thermistor
Applications
Drive Inverters with brake system
Advantages
2 functions in one package
Easy to mount with two screws
Suitable for wave soldering
High temperature and power cycling
capability
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
V
RRM
= 1600 V
I
dAVM
= 116/145 A
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
6+7
4+5
2+3
10+11 12
13
19+20
1
21+22
18 17
8+9
2002 IXYS All rights reserved
2 - 2
Advanced Technical Information
VUB 116 / 145
240
I
R
V
R
= V
RRM
, T
VJ
= 25C
0.1
mA
V
R
= V
RRM
, T
VJ
= 150C
2
mA
V
F
I
F
= 80 A, T
VJ
= 25C
VUB 116
1.43
V
I
F
= 150 A, T
VJ
= 25C
VUB 145
1.68
V
V
T0
for power-loss calculations only
VUB 116
0.85
V
VUB 145
0.85
V
r
T
T
VJ
= 150C
VUB 116
7.1
m
VUB 145
5.9
m
R
thJC
per diode
VUB 116
0.65 K/W
VUB 145
0.5 K/W
R
thCH
VUB 116
0.1 K/W
VUB 145
0.1 K/W
V
BR(CES)
V
GS
= 0 V, I
C
= 0.1 mA
1200
V
V
GE(th)
I
C
= 8 mA
VUB 116
4.5
6.45
V
I
C
= 3 mA
VUB 145
4.5
6.45
V
I
CES
T
VJ
=
25C, V
CE
= 1200 V
0.1
mA
T
VJ
=
125C, V
CE
= 0,8 V
CES
0.5
mA
V
CEsat
V
GE
= 15 V, I
C
= 100 A
VUB 116
3.5
V
V
GE
= 15 V, I
C
= 150 A
VUB 145
3.7
V
t
SC
(SCSOA)
V
GE
= 15 V, V
CE
= 720 V, T
VJ
=
125C,
10
s
RBSOA
V
GE
= 15 V, V
CE
= 1200 V, T
VJ
= 125C,
clamped inductive load, L = 100 H
R
G
= 22
VUB 116
100
A
R
G
= 15
VUB 145
150
A
C
ies
V
CE
= 25 V, f = 1 MHz, V
GE
= 0 V VUB 116
3.8
nF
VUB 145
5.7
nF
t
d(on)
150
ns
t
d(off)
680
ns
E
on
VUB 116
6
mJ
VUB 145
9
mJ
E
off
VUB 116
5
mJ
VUB 145
7.5
mJ
R
thJC
VUB 116
0.33 K/W
VUB 145
0.22 K/W
R
thJH
VUB 116
0.66 K/W
VUB 145
0.44 K/W
I
R
V
R
= V
RRM
, T
VJ
= 25C
0.25
mA
V
R
= 1200 V, T
VJ
= 125C
1
mA
V
F
I
F
= 30 A,
T
VJ
= 25C
2.76
V
V
T0
For power-loss calculations only
1.3
V
r
T
T
VJ
= 150C
16
m
I
RM
I
F
= 50 A, -di
F
/dt = 100 A/s, V
R
= 100 V
5.5
11
A
t
rr
I
F
= 1 A, -di
F
/dt = 200 A/s, V
R
= 30 V
40
ns
R
thJC
0.9 K/W
R
thCH
0.1 K/W
R
25
4.75
5.0 5.25
k
B
25/50
3375
K
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
Rectifier Diodes
Fast Recovery Diode
V
CE
= 720 V, I
C
= 50/75 A
V
GE
= 15 V, R
G
= 32/15
Inductive load; L = 100 H
T
VJ
=
125C
IGBT
Rectifier Diodes
NTC
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