2002 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VUE 130-06NO7
241
B3
Three Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
in ECO-PAC 2
I
dAV
= 130 A
V
RRM
= 600 V
t
rr
= 35 ns
V
RSM
V
RRM
Typ
V
V
600
600
VUE 130-06NO7
Symbol
Conditions
Maximum Ratings
I
dAV
T
C
= 85C, module
130
A
I
dAVM
130
A
I
FSM
T
VJ
= 45C
t = 10 ms (50 Hz), sine
600
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
640
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
520
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
555
A
I
2
t
T
VJ
= 45C
t = 10 ms (50 Hz), sine
1800
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
1720
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
1350
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
1295
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque (M4)
1.5-2/14-18
Nm/lb.in.
Weight
typ.
24
g
Features
Package with DCB ceramic
base plate in low profile
Isolation voltage 3000 V~
Planar passivated chips
Low forward voltage drop
Leads suitable for PC board soldering
Applications
Supplies for DC power equipment
Input and output rectifiers for high
frequency
Battery DC power supplies
Field supply for DC motors
Advantages
Space and weight savings
Improved temperature and power
cycling capability
Small and light weight
Low noise switching
Data according to IEC 60747 refer to a single diode unless otherwise stated
for resistive load at bridge output.
Dimensions in mm (1 mm = 0.0394")
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
V
R
= V
RRM
T
VJ
= 25C
0.1
mA
V
R
= V
RRM
T
VJ
= T
VJM
2.5
mA
V
F
I
F
= 60 A
T
VJ
= 25C
2.04
V
V
T0
for power-loss calculations only
1.09
V
r
T
4.3 m
R
thJC
per diode; DC current
0.8 K/W
R
thCH
per diode, DC current, typ.
0.2 K/W
I
RM
I
F
= 130 A, -diF/dt = 100 A/s
6.8
A
V
R
= 100 V, T
VJ
= 100C
t
rr
I
F
= 1 A; -di/dt = 300 A/s; V
R
= 30 V, T
VJ
= 25C
35
ns
a
Max. allowable acceleration
50
m/s
2
d
S
creeping distance on surface (pin to heatsisnk)
11.2
mm
d
A
strike distance in air (pin to heatsisnk)
9.7
mm
Preliminary data sheet
PS16
EG 1
~
A 1
~
L 9
~
K10
Pin arangement see outlines
2002 IXYS All rights reserved
2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VUE 130-06NO7
241
B3
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
200
600
1000
0
400
800
80
90
100
110
120
130
140
0.00001
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
5
10
15
20
0.0
0.4
0.8
1.2
1.6
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
20
40
60
80
100
1000
0
1000
2000
3000
4000
0
1
2
0
20
40
60
80
100
120
140
160
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
nC
A/
s
A/
s
t
rr
ns
t
fr
A/
s
s
Z
thJC
DWLP55-06
DWLP55-06
DWLP55-06
DWLP55-06
DWLP55-06
DWLP55-06
T
VJ
= 25C
T
VJ
= 100C
T
VJ
= 150C
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
T
VJ
= 100C
V
R
= 300 V
T
VJ
= 100C
V
R
= 300 V
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
T
VJ
= 100C
V
R
= 300 V
I
RM
Q
r
T
VJ
= 100C
I
F
= 60 A
V
FR
t
rr
VUE 130-06
Fig. 7 Typical transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
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